KMB012N30QA

SEMICONDUCTOR TECHNICAL DATA GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for DC/DC Converter and Battery pack.. D KMB012N30QA N-Ch Trench MOSFET H T P G L FEATURES VDSS=30V, ID=12A. Drain to Source On Resistance. RDS(ON)=7m (Max.) @ VGS=10V RDS(ON)=11m (Max.) @ VGS=4.5V 8 5 B1 B2 1 4 A MOSFET Maximum Ratings (Ta=25 CHARACTERISTIC Drain to Source Voltage Gate to Source Voltage Drain Current Drain Power Dissipation DC@Ta=25 Pulsed @Ta=25 Unless otherwise noted) SYMBOL RATING VDSS VGSS (Note 1) (Note 1) (Note 1) ID IDP PD Tj Tstg (Note 1) RthJA 30 20 12 48 2.5 150 -55~150 50 /W UNIT V V A A W DIM A B1 B2 D G H L P T MILLIMETERS _ 4.85 + 0.2 _ 3.94 + 0.2 _ 6.02 + 0.3 _ 0.4 + 0.1 0.15+0.1/-0.05 _ 1.63 + 0.2 _ 0.65 + 0.2 1.27 0.20+0.1/-0.05 FLP-8 Maximum Junction Temperature Storage Temperature Range Thermal Resistance, Junction to Ambient Note1) Surface Mounted on 1″ 1″ FR4 Board, t 10sec. KMB012N 30QA PIN CONNECTION (TOP VIEW) S S S G 1 8 D D D D 1 2 3 8 7 6 5 2 7 3 6 4 4 5 2009. 09. 04 Revision No : 0 1/4 KMB012N30QA ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Static Drain to Source Breakdown Voltage Drain Cut-off Current Gate to Source Leakage Current Gate to Source Threshold Voltage Drain to Source On Resistance Forward Transconductance Dynamic Input Capaclitance Ouput Capacitance Reverse Transfer Capacitance Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Source to Drain Diode Ratings Continuous Source Current Pulsed Source Current Source to Drain Forward Voltage Note2) Pulse Test : Pulse Width 300 IS ISP VSD VGS=0V, IS=1.7A (Note2) 0.75 1.7 A 48 1.2 V VGS=10V VGS=4.5V Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDS=15V, VGS=10V ID=1A, RG=6 (Note2) VDS=15V, VGS=10V, ID=12A (Note2) VDS=15V, VGS=0V, f=1MHz (Note2) 1310 420 205 27.0 14.5 4.8 6.6 7.0 7.5 28.3 9.9 nC ns pF BVDSS IDSS IGSS Vth RDS(ON) gfs VGS=0V, ID=250 A VGS=0V, VDS=30V VGS= 20V, VDS=0V VDS=VGS, ID=250 A VGS=10V, ID=12A VGS=4.5V, ID=10A VDS=5V, ID=12A (Note2) (Note2) (Note2) 30 1.0 6.0 8.5 48 1 100 3.0 7.0 11.0 m S V A nA V SYMBOL ) UNLESS OTHERWISE NOTED TEST CONDITION MIN. TYP. MAX. UNIT , Duty Cycle 2% 2009. 09. 04 Revision No : 0 2/4 KMB012N30QA Drain to Source On Resistance RDS(ON) (Ω) Fig1. ID - VDS 50 5V VGS=10V 4.5V 4.0V Fig2. RDS(on) - ID 15 12 9 6 3 0 VGS=4.5V Drain Current ID (A) 40 30 3.5V 20 10 3.0V VGS=10V 0 0 0.5 1.0 1.5 2.0 2.5 3.0 0 10 20 30 40 50 Drain to Source Voltage VDS (V) Drain Current ID (A) Fig3. ID - VGS Normalized On Resistance RDS(ON) 50 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -75 -50 -25 Fig4. RDS(ON) - Tj Drain Current ID (A) 40 30 Tj=25 C VGS=10V, ID=12A VGS=4.5V, ID=10A 20 10 Tj=150 C Tj=-55 C 0 0 1 2 3 4 5 0 25 50 75 100 125 150 175 Gate to Source Voltage VGS (V) Junction Temperature Tj ( C ) Normalized Gate to Source Threshold Voltage Fig5. Vth - Tj 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -75 -50 -25 0 25 50 75 100 125 150 175 102 Fig6. IS - VSD Reverse Drain Current IS (A) VDS = VGS, ID = 250µA 101 Tj=150 C 100 Tj=25 C Tj=-55 C 10-1 10-2 0.2 0.4 0.6 0.8 1.0 Junction Temperature Tj ( C ) Source to Drain Voltage VSD (V) 2009. 09. 04 Revision No : 0 3/4 KMB012N30QA Fig7. RDS(ON) - VGS 25 ID=12A Drain to Source On Resistance RDS(ON) (mΩ) Fig8. C - VDS 104 f=1MHz Capacitance C (pF) 20 15 10 5 0 Tj=150 C 103 Ciss Coss 102 Crss Tj=25 C 101 0 2 4 6 8 10 12 0 5 10 15 20 25 30 Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) Fig9. Qg - VGS 10 Fig10. Safe Operation Area 102 Gate to Source Voltage VGS (V) VDS = 15V, ID = 12A Drain Current ID (A) 8 101 R DS (O N 100us IT M LI ) 1ms 10ms 100ms 6 100 4 2 10-1 VGS= 10V SINGLE PULSE TJ= 25 C DC 0 0 6 12 18 24 30 10-2 10-2 10-1 100 101 102 Gate to Charge Qg (nC) Drain to Source Voltage VDS (V) Fig11. Transient Thermal Response Curve Normalized Effective Transient Thermal Resistance 101 100 0.5 0.2 10-1 0.1 0.05 0.02 PDM Single Pulse t1 t2 RthJA=58.3 C/W 10-2 0.01 10-3 10-4 10-3 10-2 10-1 1 101 102 103 Square Wave Pulse Duration (sec) 2009. 09. 04 Revision No : 0 4/4