KMB080N75PA

SEMICONDUCTOR TECHNICAL DATA General Description It s mainly suitable for low voltage applications such as automotive, DC/DC converters and a load switch in battery powered applications E A KMB080N75PA N CHANNEL MOS FIELD EFFECT TRANSISTOR O C F G B Q DIM MILLIMETERS _ 9.9 + 0.2 A B C D E FEATURES VDSS= 75V, ID= 80A Drain-Source ON Resistance : RDS(ON)=12m (Max.) @VGS = 10V D I K M L P F G H J H I J K L M N O 15.95 MAX 1.3+0.1/-0.05 _ 0.8 + 0.1 _ 3.6 + 0.2 _ 2.8 + 0.1 3.7 0.5+0.1/-0.05 1.5 _ 13.08 + 0.3 1.46 _ 1.4 + 0.1 _ 1.27 + 0.1 _ 2.54 + 0.2 _ 4.5 + 0.2 _ 2.4 + 0.2 _ 9.2 + 0.2 MOSFET MAXIMUM RATING (Ta=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage DC Drain Current Pulsed (Note 1) Drain-Source Diode Forward Current Drain Power Dissipation Maximum Junction Temperature Storage Temperature Range Note1) Pulse Test : Pulse width IDP IS Unless otherwise noted) RATING 75 25 80 320 80 300 -55 175 -55 175 1% UNIT V V A A A W 1 N N SYMBOL VDSS VGSS I D* 2 3 1. GATE 2. DRAIN 3. SOURCE P Q TO-220AB PD* 25 Tj Tstg 10 S Duty cycle Thermal Characteristics CHARACTERISTIC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case SYMBOL RthJA RthJC RATING 62.5 0.5 UNIT /W /W Equivalent Circuit D G S 2007. 10. 31 Revision No : 2 1/6 KMB080N75PA MOSFET Electrical Characteristics (Ta=25 CHARACTERISTIC Unless otherwise noted) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Drain Cut-off Current Gate Leakage Current Gate Threshold Voltage Drain-Source ON Resistance Forward Transconductance BVDSS IDSS IGSS Vth RDS(ON) gFS ID=250 A, VGS=0V VDS=75V, VGS=0V, VGS= 20V, VDS=0V VDS=VGS, ID=250 A VGS=10V, ID=40A VDS=15V, ID=40A 75 2 10 20 10 100 4 12 V A nA V Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Note 1) Pulse Test : Pulse width 10 s, Duty Cycle Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf 1%. VDD= 30.5V ID=40A RG=25 (Note1,2) 66 30 ns VDS= 60V, VGS= 10V, ID=40A (Note1,2) VDS=25V, VGS=0V, f=1.0MHz 3700 730 240 117 27 47 25 25 nC pF Note 2) Essentially Independent of Operating Temperature. DIODE Electrical Characteristics (Ta=25 CHARACTERISTIC Diode Forward Voltage Reverse Recovery Time Unless otherwise noted) SYMBOL VSD Trr TEST CONDITION ISD=80A, VGS=0V VGS=0V, IS=80A, dIF/dt=100A/ s MIN. TYP. 132 MAX. 1.5 UNIT V Marking 1 KMB 080N75P A 701 2 1 2 PRODUCT NAME LOT NO 2007. 10. 31 Revision No : 2 2/6 KMB080N75PA Fig 1. ID - VDS 300 10V Common Source TC=25 C Pulse Test 7V Fig 2. RDS(ON) - ID 10 Common Source TC=25 C Pulse Test Drain Current ID (A) 240 180 120 60 9V On - Resistance RDS(ON) (mΩ) 9.6 9.2 VGS = 10V 6V 8.8 8.4 8.0 VGS=5V 0 0 4 8 12 16 20 0 20 40 60 80 100 Drain - Source Voltage VDS (V) Drain Current ID (A) Fig 3. ID - VGS 300 2.2 VGS = 10V IDS = 40A Fig 4. RDS(ON) - Tj Normalized On Resistance 10 Drain Current ID (A) 240 180 120 60 0 TC=25 C 1.8 1.4 1.0 0.6 0.2 0 2 4 6 8 -50 0 50 100 150 Gate - Source Voltage VGS (V) Junction Temperature Tj ( C) Fig 5. Vth - Tj 1.1 1.0 0.9 0.8 0.7 VDS = VGS ID = 250µA Fig 6. IDR - VDSF VGS = 0 250µs Pulse Test Reverse Drain Current IS (A) Normalized On Resistance 101 150 C 100 25 C 0.6 -50 0 50 100 150 10-1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Junction Temperature Tj ( C) Source - Drain Voltage VSD (V) 2007. 10. 31 Revision No : 2 3/6 KMB080N75PA Fig 7. Qg - VGS Gate - Source Voltage VGS (V) 15 12 9 6 3 0 0 30 60 90 120 150 10000 Fig 8. C - VDS f=1MHz VGS=0V 8000 Capacitance (pF) 6000 4000 2000 0 0 10 20 30 40 50 Ciss Coss Crss Gate - Charge Qg (nC) Drain - Source Voltage VDS (V) Fig 9. Safe Operation Area 103 Drain Current ID (A) 102 R DS ( ) ON lim its 100µs 1ms 10ms DC 101 100 10-1 -1 10 100 101 102 103 Drain - Source Voltage VDS (V) Fig 10. Rth Normalized Transient Thermal Resistance 1 Duty=0.5 0.2 0.1 PDM t1 t2 0.1 0.05 0.02 0.01 - Duty Factor, D= t1/t2 Single Pulse - RthJC = 0.01 10-5 10-4 10-3 10-2 10-1 Tj(max) - Tc PD 100 101 Square Wave Pulse Duration (sec) 2007. 10. 31 Revision No : 2 4/6 KMB080N75PA - Gate Charge VGS -4.5V ID Schottky Diode 0.8 x VDSS ID 1.0 mA Q VDS VGS Qgs Qgd Qg - Resistive Load Switching RL ton 0.5 x VDSS 6Ω VDS 10V VGS VGS 90% VDS 10% td(on) tr toff td(off) tf - Single Pulsed Avalanche Energy EAS= 1 LIAS2 2 BVDSS BVDSS - VDD BVDSS L IAS 0.5 x VDSS 25Ω VDS 10 V ID(t) VGS VDD VDS(t) Time tp 2007. 10. 31 Revision No : 2 5/6 KMB080N75PA - Source - Drain Diode Reverse Recovery and dv /dt DUT VDS IF Body Diode Forword Current ISD (DUT) di/dt IRM IS Body Diode Reverse Current 0.8 x VDSS VDS (DUT) driver Body Diode Recovery dv/dt VSD VDD 10V VGS Body Diode Forword Voltage drop 2007. 10. 31 Revision No : 2 6/6