KMB3D0P30SA

SEMICONDUCTOR TECHNICAL DATA General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment and SMPS. KMB3D0P30SA P-Ch Trench MOSFET L E B L FEATURES A H 2 G 1 3 VDSS=-30V, ID=-3A Drain-Source ON Resistance RDS(ON)=80m (Max.) @ VGS=-10V RDS(ON)=140m (Max.) @ VGS=-4.5V Super Hige Dense Cell Design P P DIM A B C D E G H J K L M N P MILLIMETERS _ 2.93 + 0.20 1.30+0.20/-0.15 1.30 MAX 0.40+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 C N K M SOT-23 MAXIMUM RATING (Ta=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage DC@TA=25 Drain Current DC@TA=70 Pulsed Drain-Source-Diode Forward Current Drain Power Dissipation TA=25 TA=70 Maximum Junction Temperature Storage Temperature Range Thermal Resistance, Junction to Ambient Note : *Sorface Mounted on FR4 Board PIN CONNECTION (TOP VIEW) Tj Tstg RthJA* IDP IS PD* 0.8 150 -55 150 100 /W ) SYMBOL VDSS VGSS I D* -2.5 -12 -1.25 1.25 W A A N-Ch -30 20 -3 UNIT V V D 3 3 2 1 2 1 G S 2007. 6. 28 Revision No : 1 J D 1/5 KMB3D0P30SA ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Static Drain-Source Breakdown Voltage Drain Cut-off Current Gate Leakage Current Gate Threshold Voltage Drain-Source ON Resistance Forward Transconductance Dynamic Input Capaclitance Ouput Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delat Time Turn-On Rise Time Turn-On Deley Time Turn-On Fall Time Source-Drain Diode Ratings Source-Drain Forward Voltage NOTE 1> * : Pulse Test : Pulse width