KMB6D0DN30QA_08

SEMICONDUCTOR TECHNICAL DATA GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment and DC-DC Converter Applications. FEATURES VDSS=30V, ID=6A. Drain-Source ON Resistance. RDS(ON)=28m RDS(ON)=42m (Max.) @VGS=10V (Max.) @VGS=4.5V 8 KMB6D0DN30QA Dual N-Ch Trench MOSFET H T D P G L A 5 B1 B2 Super High Dense Cell Design High Power and Current Handing Capability 1 4 DIM A B1 B2 D G H L P T MILLIMETERS _ 4.85 + 0.2 _ 3.94 + 0.2 _ 6.02 + 0.3 _ 0.4 + 0.1 0.15+0.1/-0.05 _ 1.63 + 0.2 _ 0.65 + 0.2 1.27 0.20+0.1/-0.05 MAXIMUM RATING (Ta=25 CHARACTERISTIC Drain Source Voltage Gate Source Voltage DC Drain Current Pulsed Drain Source Diode Forward Current Drain Power Dissipation 25 Unless otherwise noted) SYMBOL VDSS VGSS ID * IDP IS PD * Tj Tstg RthJA* PATING 30 20 6 30 1.7 2 150 -50~150 62.5 /W UNIT V V A A A W FLP-8 Maximum Junction Temperature Storage Temperature Range Thermal Resistance, Junction to Ambient Note> *Surface Mounted on FR4 Board, t 10sec. KMB6D0DN 30QA PIN CONNECTION (TOP VIEW) S1 G1 S2 G2 1 8 D1 D1 D2 D2 1 2 3 8 7 6 5 2 7 3 6 4 5 4 2008. 3. 21 Revision No : 1 1/5 KMB6D0DN30QA ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Static Drain-Source Breakdown Voltage Drain Cut-off Current Gate Leakage Current Gate Threshold Voltage Drain-Source ON Resistance On-State Drain Current Forward Transconductance Dynamic Input Capacitance Ouput Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Source-Drain Diode Ratings Source-Drain Forward Voltage Note> * Pulse Test : Pulse width 300 VSDF* , Duty cycle IDR=1.7A, VGS=0V 2% 0.75 1.2 V Ciss Coss Crss Qg* Qgs* Qgd* td(on)* tr* td(off)* tf* VDD=15V, VGS=10V ID=1A, RG=6 VDS=15V, VGS=10V, ID=2A VDS=15V, f=1MHz, VGS=0V 576 111 75 12.5 2.0 2.8 7.8 11.6 15.3 16 ns nC pF BVDSS IDSS IGSS Vth RDS(ON)* VGS=4.5V, ID=5A ID(ON)* gfs* VDS=5V, VGS=10V VDS=5V, ID=6A 20 35 20 42 A S ID=250 A, VGS=0V VDS=24V, VGS=0V VGS= 20V, VDS=0V 30 1.0 1.7 24 1 100 2.5 28 m V A nA V SYMBOL ) UNLESS OTHERWISE NOTED TEST CONDITION MIN. TYP. MAX. UNIT VDS=VGS, ID=250 A VGS=10V, ID=6A 2008. 3. 21 Revision No : 1 2/5 KMB6D0DN30QA Fig1. ID - VDS 10 Fig2. RDS(on) - ID Drain Source On Resistance RDS(ON) (Ω) 0.16 Common Source Pulse Test 0.14 Ta= 25 C 0.12 0.1 0.08 0.06 0.04 0.02 0 0 Drain Current ID (A) 8 VGS=10, 9, 8, 7, 6, 5, 4V 6 4 2 VGS=2.5V VGS=4.5 VGS=1.5V VGS=10.0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 5 10 15 20 Drain - Source Voltage VDS (V) Drain Current ID (A) Fig3. ID - VGS Normalized On Resistance RDS(ON) 25 1.6 1.4 1.2 1.0 0.8 0.6 0 VGS = 10V ID= 6A Fig4. RDS(ON) - Tj Drain Current ID (A) 20 15 10 5 0 125 C 25 C -55 C 0 1.0 2.0 3.0 4.0 5.0 6.0 -75 -50 -25 0 25 50 75 100 125 150 Gate - Source Voltage VGS (V) Junction Temperature Tj ( C ) Fig5. Vth - Tj Normalized Threshold Voltage Vth Reverse Drain Current IDR (A) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -75 VDS = VGS ID = 250µA Fig6. IS - VSDF 40 10 1 -50 -25 0 25 50 75 100 125 150 0.4 0.6 0.8 1.0 1.2 1.4 Junction Temperature Tj ( C ) Source - Drain Voltage VSDF (V) 2008. 3. 21 Revision No : 1 3/5 KMB6D0DN30QA Fig7. C - VDS 1200 1000 10 Fig8. Qg - VGS Gate - Source Voltage VGS (V) VDS = 15V ID = 2A 8 Capacitance (pF) 800 600 400 200 0 Coss 6 Ciss 4 2 Crss 0 0 3 6 9 12 15 0 5 10 15 20 25 30 Drain - Source Voltage VDS (V) Gate - Charge Qg (nC) Fig9. Safe Operation Area 102 Operation in this area is limited by RDS(ON) 100µs 1ms 10ms 100ms Drain Current ID (A) 101 100 1s DC 10s 10-1 VGS= 10V SINGLE PULSE RθJA = 62.5 C/W 10-2 -1 10 100 101 102 Drain - Source Voltage VDS (V) Fig10. Transient Thermal Response Curve Normalized Effective Transient Thermal Resistance 1 0.5 0.2 10-1 0.1 0.05 0.02 0.01 PDM t1 t2 Single Pluse RθJA= 62.5 C/W 10-2 10-3 10-4 10-3 10-2 10-1 1 101 102 103 Square Wave Pulse Duration (sec) 2008. 3. 21 Revision No : 1 4/5 KMB6D0DN30QA Fig11. Gate Charge VGS 10 V Schottky Diode ID 0.5 VDSS ID 1.0 mA VDS VGS Q Qgs Qgd Qg Fig12. Resistive Load Switching RL VDS 90% 0.5 VDSS 6Ω VDS VGS 10% td(on) tr ton td(off) 10 V VGS tf toff 2008. 3. 21 Revision No : 1 5/5