KMB6D0DN35QA

SEMICONDUCTOR TECHNICAL DATA GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converters. D KMB6D0DN35QA Dual N-Ch Trench MOSFET H T P G L FEATURES VDSS=35V, ID=6A. Drain-Source ON Resistance. RDS(ON)=28m RDS(ON)=42m (Max.) @VGS=10V (Max.) @VGS=4.5V 8 5 B1 B2 1 4 A Super High Dense Cell Design Very fast switching DIM A B1 B2 D G H L P T MILLIMETERS _ 4.85 + 0.2 _ 3.94 + 0.2 _ 6.02 + 0.3 _ 0.4 + 0.1 0.15+0.1/-0.05 _ 1.63 + 0.2 _ 0.65 + 0.2 1.27 0.20+0.1/-0.05 MAXIMUM RATING (Ta=25 CHARACTERISTIC Drain Source Voltage Gate Source Voltage DC Drain Current Pulsed Drain Source Diode Forward Current Drain Power Dissipation 25 100 Maximum Junction Temperature Storage Temperature Range Unless otherwise noted) SYMBOL VDSS VGSS ID * IDP IS PD * Tj Tstg RthJA* PATING 35V 20 6 20 1.3 2 1.6 -50~150 -50~150 62.5 /W UNIT V V A A A W W FLP-8 Marking Type Name KMB6D0DN 35QA 721 Lot No. Thermal Resistance, Junction to Ambient * : Surface Mounted on FR4 Board PIN CONNECTION (TOP VIEW) S1 G1 S2 G2 1 8 D1 D1 D2 D2 1 2 3 8 7 6 5 2 7 3 6 4 5 4 2007. 8. 13 Revision No : 1 1/5 KMB6D0DN35QA ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Static Drain-Source Breakdown Voltage Drain Cut-off Current Gate Leakage Current Gate Threshold Voltage Drain-Source ON Resistance On-State Drain Current Forward Transconductance Dynamic Input Capacitance Ouput Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Source-Drain Diode Ratings Source-Drain Forward Voltage Note>*Pulse Test : Pulse width 300 VSDF , Duty cycle IDR=1.7A, VGS=0V 2% 0.75 1.2 V Ciss Coss Crss Qg* Qgs* Qgd* td(on)* tr* td(off)* tf* VDD=15V, VGS=10V ID=1A, RG=6 (Note 1) VDS=10V, VGS=5V, ID=6A VDS=15V, f=1MHz, VGS=0V 740 170 75 7.0 3.8 2.5 8 13 18 8 10.0 16 24 ns 29 6 nC pF BVDSS IDSS IGSS Vth* RDS(ON)* VGS=4.5V, ID=4.9A ID(ON)* gfs* VDS=5V, VGS=10V VDS=10V, ID=6A 20 35 20 42 A S ID=250 A, VGS=0V VDS=24V, VGS=0V VGS= 25V, VDS=0V 35 1.0 2.0 24 1 100 3.0 28 m V A nA V SYMBOL ) UNLESS OTHERWISE NOTED TEST CONDITION MIN. TYP. MAX. UNIT VDS=VGS, ID=250 A VGS=10.0V, ID=6A 2007. 8. 13 Revision No : 1 2/5 KMB6D0DN35QA Fig1. ID - VDS Drain Source On Resistance RDS(ON) (Ω) 20 VGS=10 VGS=4.5 Common Source Tc= 25 C Pulse Test Fig2. RDS(on) - ID 0.16 Common Source Pulse Test 0.14 Tc= 25 C 0.12 0.1 0.08 0.06 0.04 0.02 0 0 Drain Current ID (A) 16 VGS=5 12 VGS=4.0 8 4 0 VGS=3.5 VGS=3.0 VGS=4.5 VGS=10.0 0 2 4 6 8 10 5 10 15 20 Drain - Source Voltage VDS (V) Drain Current ID (A) Fig3. ID - VGS 20 Common Source VDS=5V Pulse Test Fig4. RDS(on) - Tj 50 Common Source VDS=10V Pulse Test Drain Source On Resistance RDS(ON) (mΩ) 5 Drain Current ID (A) 15 40 30 20 10 0 10 125 C 25 C -55 C 5 0 1 2 3 4 -80 -40 0 40 80 120 160 Gate - Source Voltage VGS (V) Junction Temperature Tj ( C ) Fig5. Vth - Tj Gate Threshold Voltage Vth (V) Reverse Drain Current IDR (A) 5 Common Source VGS=VDS ID=250µA 4 Pulse Test Fig6. IDR - VSDF 10 8 6 4 2 0 0 0.4 0.8 1.2 1.6 2.0 Common Source Tc= 25 C Pulse Test 3 2 1 0 -80 -40 0 40 80 120 160 Junction Temperature Tj ( C ) Source - Drain Forward Voltage VSDF (V) 2007. 8. 13 Revision No : 1 3/5 KMB6D0DN35QA Fig7. Transient Thermal Response Curve Normalized Effective Transient Thermal Resistance 100 0.5 0.2 10-1 0.1 0.05 0.02 0.01 PDM t1 t2 Single Pluse Duty Cycle D = t1/t2 10-2 10-3 10-4 10-3 10-2 10-1 1 101 102 103 Square Wave Pulse Duration (sec) Fig8. Safe Operation Area 102 Operation in this area is limited by RDS(ON) 100µs 1ms 10ms 100ms 1s DC 10s Drain Current ID (A) 101 100 10-1 VGS= 10V SINGLE PULSE TA = 25 C 10-2 -1 10 100 101 102 Drain - Source Voltage VDS (V) 2007. 8. 13 Revision No : 1 4/5 KMB6D0DN35QA Fig. 1 Gate Charge VGS 10 V Schottky Diode ID 0.5 VDSS ID 1.0 mA VDS VGS Q Qgs Qgd Qg Fig. 2 Resistive Load Switching RL VDS 90% 0.5 VDSS 6Ω VDS VGS 10% td(on) tr ton td(off) 10 V VGS tf toff 2007. 8. 13 Revision No : 1 5/5