KMB6D0DN35QB

SEMICONDUCTOR TECHNICAL DATA GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converters. KMB6D0DN35QB Dual N-Ch Trench MOSFET FEATURES ・VDSS=35V, ID=6A. ・Drain-Source ON Resistance. RDS(ON)=28mΩ (Max.) @VGS=10V RDS(ON)=42mΩ (Max.) @VGS=4.5V ・Super High Dense Cell Design ・Very fast switching MAXIMUM RATING (Ta=25℃ Unless otherwise noted) CHARACTERISTIC Drain Source Voltage Gate Source Voltage Drain Current Ta=25℃ Pulsed(Note1) SYMBOL VDSS VGSS ID * IDP IS PD * Tj Tstg RthJA* PATING 35V ±20 6 24 1.3 2 -50~150 -50~150 62.5 UNIT V V A A A W ℃ ℃ ℃/W Drain Source Diode Forward Current Drain Power Dissipation Maximum Junction Temperature Storage Temperature Range Thermal Resistance, Junction to Ambient Ta=25℃ * : Surface Mounted on FR4 Board (25mm×25mm, 1.5t) 2011. 2. 25 Revision No : 0 1/5 KMB6D0DN35QB ELECTRICAL CHARACTERISTICS (Tj=25℃) UNLESS OTHERWISE NOTED CHARACTERISTIC Static Drain-Source Breakdown Voltage Drain Cut-off Current Gate Leakage Current Gate Threshold Voltage Drain-Source ON Resistance On-State Drain Current Forward Transconductance Dynamic Input Capacitance Ouput Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Total Gate Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Source-Drain Diode Ratings Source-Drain Forward Voltage VSDF IDR=1.7A, VGS=0V 0.75 1.2 V Ciss Coss Crss Qg Qgs Qgd Qg td(on) tr td(off) tf VDD=15V, VGS=10V ID=1A, RG=6Ω (Note2,3) VDS=28V, VGS=5V, ID=6A (Note2,3) VDS=28V, VGS=10V, ID=6A (Note2,3) VDS=15V, f=1MHz, VGS=0V 460 170 50 9.0 1.5 3.0 5.5 16 14.5 40 11.5 12.6 25.5 ns 21 nC pF BVDSS IDSS IGSS Vth RDS(ON) ID(ON) gfs ID=250μ VGS=0V A, VDS=35V, VGS=0V VGS=±20V, VDS=0V VDS=VGS, ID=250μ A VGS=10.0V, ID=6A VGS=4.5V, ID=5A VDS=5V, VGS=10V VDS=10V, ID=6A 35 1.0 20 2.0 24 35 20 1 ±100 3.0 28 mΩ 42 A S V μ A nA V SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Note1) Repetivity rating : Pulse width Limited by juntion temperature. Note2) Pulse tesl : Pulse width ≤ 300㎲ , Duty cycle ≤ 2% Note3) Essentially independenl of operating temperature. 2011. 2. 25 Revision No : 0 2/5 KMB6D0DN35QB 2011. 2. 25 Revision No : 0 3/5 KMB6D0DN35QB 2011. 2. 25 Revision No : 0 4/5 KMB6D0DN35QB 2011. 2. 25 Revision No : 0 5/5