KMB7D0DN40QA_09

SEMICONDUCTOR TECHNICAL DATA GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for power management in PC, portable equipment and battery powered systems. KMB7D0DN40QA Dual N-Ch Trench MOSFET H T D P G L FEATURES VDSS=40V, ID=7A. Drain to Source on Resistance. RDS(ON)=25m RDS(ON)=45m (Max.) @VGS=10V (Max.) @VGS=4.5V 1 8 A 5 B1 B2 4 DIM A B1 B2 D G H L P T MILLIMETERS _ 4.85 + 0.2 _ 3.94 + 0.2 _ 6.02 + 0.3 _ 0.4 + 0.1 0.15+0.1/-0.05 _ 1.63 + 0.2 _ 0.65 + 0.2 1.27 0.20+0.1/-0.05 Maximum Ratings (Ta=25 Unless otherwise noted) SYMBOL PATING UNIT VDSS VGSS 40 20 7 36 1.7 2 1.44 -55~150 -55~150 62.5 /W V V A A A W W CHARACTERISTIC Drain to Source Voltage Gate to Source Voltage Drain Current Ta=25 Pulsed Drain to Source Diode Forward Current Drain Power Dissipation Ta=25 Ta=100 Maximum Junction Temperature Storage Temperature Range Thermal Resistance, Junction to Ambient FLP-8 ID IDP IS PD Tj Tstg RthJA KMB7D0DN 40QA Note1) Surface Mounted on 1” 1” FR4 Board., t≤10sec PIN CONNECTION (TOP VIEW) S1 G1 S2 G2 1 8 D1 D1 D2 D2 1 2 3 4 8 7 6 5 2 7 3 6 4 5 2009. 9. 24 Revision No : 2 1/5 KMB7D0DN40QA ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Static Drain to Source Breakdown Voltage Drain Cut-off Current Gate to Source Leakage Current Gate to Source Threshold Voltage Drain to Source on Resistance On-State Drain Current Forward Transconductance Dynamic Input Capaclitance Ouput Capacitance Reverse Transfer Capacitance Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Source to Drain Diode Ratings Source to Drain Forward Voltage Note2) Pulse Test : Pulse width 10 VSD , Duty cycle IS=1.7A, VGS=0V 1% 0.78 1.2 V Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDD=20V, VGS=10V ID=1A, RG=3.3 VDS=20V, VGS=4.5V, ID=6A VDS=20V, f=1MHz, VGS=0V 954 201 82 11.6 2.8 2.2 16.7 3.6 28.7 10.1 ns nC pF BVDSS IDSS IGSS Vth RDS(ON) ID(ON) gfs ID=250 A, VGS=0V VDS=32V, VGS=0V VGS= 20V, VDS=0V 40 1 15 1.8 20 35 8 1 100 2.5 25 45 m A S V A A V SYMBOL ) UNLESS OTHERWISE NOTED TEST CONDITION MIN. TYP. MAX. UNIT VDS=VGS, ID=250 A VGS=10V, ID=6A VGS=4.5V, ID=5A VDS=5V, VGS=10V VDS=5V, 2009. 9. 24 Revision No : 2 2/5 KMB7D0DN40QA 20 VGS=10V Drain to Source On Resistance RDS(ON) (mΩ) Fig1. ID - VDS Fig2. RDS(on) - ID 50 40 30 VGS=10V Drain Current ID (A) 16 12 8 4.0V VGS=4.5V 20 10 0 0 4 8 12 16 20 3.5V 4 VGS=3.0V 0 0 2 4 6 8 10 Drain to Source Voltage VDS (V) Drain Current ID (A) Fig3. ID - VGS 20 2.0 Fig4. RDS(on) - Tj Drain Current ID (A) 16 12 25 C Normalized Drain Source On Resistance RDS(ON) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -75 -50 0 25 50 75 100 125 150 175 VGS=4.5V, ID=5A VGS=10V, ID=6A 8 Tj=-55 C 4 0 1 2 150 C 3 4 5 Gate to Source Volatage VGS (V) Junction Temperature Tj ( C ) Normalized Gate to Source Threshold Voltage Vth Fig5. Vth - Tj 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -75 -50 -25 0 25 50 75 100 125 150 175 VDS=VGS, ID=250µA Fig6. IS - VSD 102 Reverse Drain Current IS (A) 101 Tj=150 C Tj=25 C Tj=-55 C 100 10-1 10-2 0.2 0.4 0.6 0.8 1.0 1.2 Junction Temperature Tj ( C) Source to Drain Voltage VSD (V) 2009. 9. 24 Revision No : 2 3/5 KMB7D0DN40QA Fig 7. C - VDS 1500 10 Fig 8. VGS - Qg Gate to Source Voltage VGS (V) f=1MHz VDS = 20V, ID = 6A 1200 8 6 4 2 0 0 3 6 9 12 15 Capacitance (pF) Ciss 900 600 300 0 0 Coss Crss 10 20 30 40 Drain to Source Voltage VDS (V) Gate Charge Qg (nC) Fig9. Safe Operation Area 102 Drain to Current ID (A) 101 ) ON 100µs M LI IT 1ms 10ms 100ms 100 RD S( 10-1 10-2 10-2 VGS= 10V SINGLE PULSE Tj= 25 C DC 10-1 100 101 102 Drain to Source Voltage VDS (V) Fig10. Transient Thermal Response Curve 10 1 NORMALIZED EFFECTIVE TRANSIENT THER MAL RESISTANCE 1 0.5 0.2 0.1 10 -1 0.05 0.02 0.01 SINGLE 10 -2 PDM t1 t2 RθJA= 71.9 C/W 10 -3 10 -4 10 -3 10 -2 10 -1 1 10 1 10 2 10 3 Square wave pulse Duration tw (sec) 2009. 9. 24 Revision No : 2 4/5 KMB7D0DN40QA Fig.7 Gate Charge Circuit and Wave Form VGS 10 V Schottky Diode ID 0.5 VDSS ID 1.0 mA VDS VGS Q Qgs Qgd Qg Fig.8 Resistive Load Switching RL VDS 90% 0.5 VDSS 6Ω VDS 10 V VGS 10% td(on) tr ton td(off) VGS tf toff 2009. 9. 24 Revision No : 2 5/5