KMB7D0NP30QA

SEMICONDUCTOR TECHNICAL DATA General Description Switching regulator and DC-DC Converter applications. It’s mainly suitable for Back-light Inverter. KMB7D0NP30QA N and P-Ch Trench MOSFET FEATURES ・N-Channel : VDSS=30V, ID=7A. : RDS(ON)=23.5mΩ(Max.) @ VGS=10V : RDS(ON)=39mΩ(Max.) @ VGS=4.5V ・P-Channel : VDSS=-30V, ID=-5A. : RDS(ON)=45.5mΩ(Max.) @ VGS=-10V : RDS(ON)=80mΩ(Max.) @ VGS=-4.5V ・Super High Dense Cell Design. ・Reliable and rugged. MAXIMUM RATING (Ta=25℃) CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage DC Drain Current Pulsed Source-Drain Diode Current Drain Power Dissipation Maximum Junction Temperature Storage Temperature Range Thermal Resistance, Junction to Ambient Note : *Sorface Mounted on FR4 Board (note1) SYMBOL VDSS VGSS I D* IDP IS PD* Tj Tstg RthJA* N-Ch 30 ±20 7 29 1.7 2 150 P-Ch -30 ±20 -5 UNIT V V A -20 -1.7 A W ℃ ℃ ℃/W -55～150 62.5 PIN CONNECTION (TOP VIEW) 2011. 3. 18 Revision No : 3 1/9 KMB7D0NP30QA ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC Static Drain-Source Breakdown Voltage BVDSS ID=250μ VGS=0V, A, ID=-250μ VGS=0V, A, VGS=0V, VDS=24V VGS=0V, VDS=-24V VGS=±20V, VDS=0V VDS=VGS, ID=250μ A VDS=VGS, ID=-250μ A VGS=10V, ID=7A Drain-Source ON Resistance RDS(ON)* VGS=-10V, ID=-5A VGS=4.5V, ID=6A VGS=-4.5V, ID=-4A ON State Drain Current ID(ON)* VGS=4.5V, VDS=5V VGS=-10V, VDS=-5V VDS=5V, ID=6.6A VDS=-5V, ID=-5A IS=1.7A, VGS=0V IS=-1.7A, VGS=0V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 30 -30 1.0 -1.0 20 -20 18 35 30 62 10 9 0.7 -0.8 V 1 μ A -1 ±100 nA ±100 3 V -3 23.5 45.5 mΩ 39 80 A S 1.2 V -1.2 SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Drain Cut-off Current IDSS Gate Leakage Current IGSS Gate Threshold Voltage Vth Forward Transconductance gfs* Source-Drain Diode Forward Voltage VSD* 2011. 3. 18 Revision No : 3 2/9 KMB7D0NP30QA ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC Dynamic N-Ch : VDS=15V, ID=6.6A, VGS=10V (Fig.1) P-Ch : VDS=-15V, ID=-5A, VGS=-10V (Fig.3) Total Gate Charge Qg N-Ch : VDS=15V, ID=6.6A, VGS=4.5V P-Ch : VDS=-15V, ID=-5A, VGS=-4.5V Gate-Source Charge Qgs N-Ch (Fig.1) P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch : VDD=15V, ID=6.6A, VGS=10V, RG=3Ω (Fig.2) P-Ch : VDD=-15V, VGS=-10V, RG=3Ω, RL=2.7Ω (Fig.4) N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch Input Capacitance Ciss P-Ch Output Capacitance Coss N-Ch : VDS=15V, VGS=0V, f=1.0MHz P-Ch : VDS=-15V, VGS=0V, f=1.0MHz N-Ch P-Ch N-Ch Reverse transfer Capacitance Crss P-Ch Note 1>* Pulse test : Pulse width≤300㎲, Duty Cycle≤2%. 89 820 126 137 76 pF 6.25 4 2.6 2.6 2.9 7.4 4.7 27.7 7.8 12.2 47.2 7.6 22.6 742 7.8 ns 7.2 9 nC N-Ch 16.4 20.5 SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT P-Ch - 13 16 (Fig.3) Gate-Drain Charge Qgd N-Ch : VDS=15V, ID=6.6A, VGS=10V (Fig.1) P-Ch : VDS=-15V, ID=-5A, VGS=-10V (Fig.3) Turn-on Delay time td(on) Turn-on Rise time tr Turn-off Delay time td(off) Turn-off Fall time tf 2011. 3. 18 Revision No : 3 3/9 KMB7D0NP30QA 2011. 3. 18 Revision No : 3 4/9 KMB7D0NP30QA 2011. 3. 18 Revision No : 3 5/9 KMB7D0NP30QA 2011. 3. 18 Revision No : 3 6/9 KMB7D0NP30QA 2011. 3. 18 Revision No : 3 7/9 KMB7D0NP30QA 2011. 3. 18 Revision No : 3 8/9 KMB7D0NP30QA 2011. 3. 18 Revision No : 3 9/9