KMC6D5CN20CA

SEMICONDUCTOR TECHNICAL DATA General Description This Device is a Dual N-Channel MOSFET designed for use as a bidirectional load switch, facilitated by its commom-drain configuration. It′ mainly suitable for Li-ion battery pack. s KMC6D5CN20CA Common N-Ch Trench MOSFET C D 8 5 A E1 E B A1 FEATURES VDSS=20V, ID=6.5A. Low Drain to Source On Resistance. : RDS(ON)=24.0m (Max.) @ VGS=4.5V : RDS(ON)=25.0m (Max.) @ VGS=4.0V : RDS(ON)=27.0m (Max.) @ VGS=3.1V : RDS(ON)=32.0m (Max.) @ VGS=2.5V ESD Protection. Super High Dense Cell Design. 1 4 DIM A A1 B GAUGE PLANE C D E E1 L MILLIMETERS 1.2 MAX 0.15 MAX _ 0.28 + 1 0.65 Typ. _ 3.0 + 0.10 _ 6.40 + 0.20 _ 4.40 + 0.10 _ 0.50 + 0.20 0.25 L MAXIMUM RATING (Ta=25 CHARACTERISTIC Drain to Source Voltage Gate to Source Voltage Drain Current Drain Power Dissipation ) SYMBOL RATING VDSS VGSS 20 12 6.5 A 26 1.5 150 -55 150 83.3 /W W UNIT V V Marking TSSOP-8 DC@Ta = 25℃(Note1) Pulsed @Ta = 25℃(Note1) ID IDP PD Tj Tstg RthJA Type Name KMC6D5 CN20CA Maximum Junction Temperature Storage Temperature Range Thermal Resistance, Junction to Ambient(Note1) Lot No. Note 1) Surface Mounted on 1″ 1″FR4 Board, t≤10sec PIN CONNECTION (TOP VIEW) D S1 S1 G1 1 2 3 4 8 7 6 5 D S2 S2 G2 1 2 3 4 Rg Rg 8 7 6 5 2009. 6. 4 Revision No : 0 1/4 KMC6D5CN20CA ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Static Drain to Source Breakdown Voltage Drain Cut-off Current Gate to Source Leakage Current Gate Threshold Voltage BVDSS IDSS IGSS Vth VGS=0V, ID=250 A VDS=20V, VGS=0V VGS= 12V, VDS=0V VDS=VGS, ID=250 A VGS=4.5V, ID=3.0A Drain to Source On Resistance RDS(ON) VGS=4.0V, ID=3.0A VGS=3.1V, ID=3.0A VGS=2.5V, ID=3.0A Gate Resistance Forward Transconductance Dynamic Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Source to Drain Diode Ratings Source to Drain Diode Forward Voltage Note2) Pulse test : Pulse width 300 VSD VGS=0V, IS=1.7A (Note2) 0.8 1.2 V Qg Qgs Qgd td(on) tr td(off) tf VDS=10V, VGS=4.0V ID=4.0A, RG=6 (Note2) VDS=10V, ID=6.5A VGS=4.0V (Note2) 4.6 1.0 2.6 1.0 1.8 7.0 6.0 s nC Rg gfs f=1MHz VDS=5V, ID=6.5A (Note2) (Note2) (Note2) (Note2) (Note2) 20 0.5 21.5 22.5 24.5 28.5 2.5 28 1 10 1.5 24.0 25.0 27.0 32.0 k S m V A A V ) TEST CONDITION MIN. TYP. MAX. UNIT SYMBOL , Duty Cycle 2%. 2009. 6. 4 Revision No : 0 2/4 KMC6D5CN20CA Fig 1. ID - VDS 30 Fig 2. RDS(ON) - ID 50 2.5V Drain to Source On-Resistance RDS(ON) (mΩ) VGS=4.5,4.0,3.1V Drain Current ID (A) 24 18 12 40 VGS=2.5V 30 20 10 0 VGS=4.5V 2.0V 6 0 0 0.5 1 1.5 2 2.5 3 0 6 12 18 24 30 Drain to Source Voltage VDS (V) Drain Current ID (A) Fig 3. ID - VGS Normalized On-Resistance RDS(ON) 30 24 18 12 25 C Fig 4. RDS(ON) - Tj 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -75 -50 -25 0 25 50 75 100 125 150 175 VGS=2.5V, ID=3A VGS=4.5V, ID=3A Drain Current ID (A) 6 150 C Tj=-55 C 0 0 1 2 3 4 Gate to Source Voltage VGS (V) Junction Temperature Tj ( C ) Fig 5. Vth - Tj 1.6 Fig 6. IS - VSD 100 Gate Threshold Voltage Vth (V) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -75 -50 -25 0 25 50 75 100 125 150 175 Reverse Drain Current IS (A) VGS = VDS, ID = 250µA 10 1 150 C 25 C Tj=-55 C 0.1 0.2 0.4 0.6 0.8 1.0 1.2 Junction Temperature Tj ( C) Source to Drain Forward Voltage VSD (V) 2009. 6. 4 Revision No : 0 3/4 KMC6D5CN20CA Fig7. RDS(ON) - VGS 50 40 30 20 10 0 1.5 Tj=150 C Drain to Source On Resistance RDS(ON) (mΩ) Fig8. C - VDS ID=6.5A 1000 f = 1MHz Capacitance C (pF) 800 600 400 200 Crss Coss Ciss Tj=25 C 2.5 3.5 4.5 0 0 4 6 12 16 20 Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) Fig9. Qg - VGS 5 Fig10. Safe Operation Area 102 Gate to Source Voltage VGS (V) Drain Current ID (A) 4 3 VDS = 10V ID = 6.5A 101 200µs 1ms 100 RDS(ON) Limited 10ms 100ms 2 1 0 0 1.2 2.4 3.6 4.8 6 10-1 VGS=4.5V SINGLE PULSE Ta= 25 C DC 10-2 10-2 10-1 100 101 102 Gate Charge Qg (nC) Drain to Source Voltage VDS (V) Fig10. Transient Thermal Response Curve 101 Normalized Effective Transient Thermal Resistance 100 Duty Cycle = 0.5 0.2 10-1 0.1 0.05 0.02 0.01 10-2 Single Pulse PDM t1 t2 1. Duty Cycle D = t1/t2 2. RthJA=111 C/W 10-3 10-4 10-3 10-2 10-1 100 101 102 103 Square Wave Pulse Duration tw (sec) 2009. 6. 4 Revision No : 0 4/4