SEMICONDUCTOR
TECHNICAL DATA
General Description
Switching regulator and DC-DC Converter applications. It’s mainly suitable for Li-ion battery pack.
8
KMC7D0CN20CA
Common N-Ch Trench MOSFET
C
D 5 A
FEATURES
VDSS=20V, ID=7A. Low Drain to Source On Resistance. : RDS(ON)=20.5m (Max.) @ VGS=4.5V : RDS(ON)=21.0m (Max.) @ VGS=4.0V : RDS(ON)=22.5m (Max.) @ VGS=3.1V : RDS(ON)=26.0m (Max.) @ VGS=2.5V ESD Protection. Super High Dense Cell Design.
1 4
E1
E
B
A1
DIM A A1
B GAUGE PLANE C D E E1 L
MILLIMETERS 1.2 MAX 0.15 MAX _ 0.28 + 1
0.65 Typ. _ 3.0 + 0.10 _ 6.40 + 0.20 _ 4.40 + 0.10 _ 0.50 + 0.20
0.25 L
MAXIMUM RATING (Ta=25
CHARACTERISTIC Drain to Source Voltage Gate to Source Voltage DC Drain Current
)
SYMBOL VDSS VGSS ID * IDP * IS * RATING 20 12 7 A 28 1.7 1.5 150 -55 150 83.3 /W A W UNIT V V Marking
TSSOP-8
Type Name
Pulsed Source to Drain Diode Current Drain Power Dissipation Ta = 25
KMC7D0 CN20CA
PD * Tj Tstg RthJA*
Maximum Junction Temperature Storage Temperature Range Thermal Resistance, Junction to Ambient
Lot No.
Note > *Surface Mounted on 1” 1” FR4 Board, t≤10sec
PIN CONNECTION (TOP VIEW)
D S1 S1 G1 1 2 3 4 8 7 6 5 D S2 S2 G2 1 2 3 4 Rg Rg 8 7 6 5
2008. 12. 19
Revision No : 3
1/5
KMC7D0CN20CA
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC Static Drain to Source Breakdown Voltage Drain Cut-off Current Gate to Source Leakage Current Gate Threshold Voltage BVDSS IDSS IGSS Vth VGS=0V, ID=250 A VDS=16V, VGS=0V VGS= 10V, VDS=0V VDS=VGS, ID=250 A VGS=4.5V, ID=4.0A Drain to Source On Resistance RDS(ON)* VGS=4.0V, ID=3.0A VGS=3.1V, ID=3.0A VGS=2.5V, ID=3.0A Gate Resistance Forward Transconductance Dynamic Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Source to Drain Diode Ratings Source to Drain Diode Forward Voltage Note > *Pulse test : Pulse width 300 VSD* VGS=0V, IS=1.7A 0.8 1.2 V Qg* Qgs* Qgd* td(on) tr td(off) tf VDD=10V, VGS=4.0V ID=4.0A, RG=6 VDS=10V, ID=7A VGS=4.0V 6.7 0.8 3.2 1.0 2.1 8.5 7.5 s nC Rg gfs* f=1MHz VDS=5V, ID=5A 20 0.5 0.7 16.5 17.0 18.5 20.5 2.5 12 1 10 1.5 20.5 21.0 22.5 26.0 k S m V A A V
)
TEST CONDITION MIN. TYP. MAX. UNIT
SYMBOL
, Duty Cycle 2%.
2008. 12. 19
Revision No : 3
2/5
KMC7D0CN20CA
Fig 1. ID - VDS
30 30
VGS=4.5,4.0,3.1,2.5V
Fig 2. RDS(ON) - ID
Drain to Source On-Resistance RDS(ON) (mΩ)
Common Source Ta =25 C Pulse Test
Drain Current ID (A)
24 18
25 20
VGS=2.5V VGS=4.5V
VGS=2V
15 10 5 0
12 6 0 0 1 2 3 4 5
0
6
12
18
24
30
Drain to Source Voltage VDS (V)
Drain Current ID (A)
Fig 3. ID - VGS
30 24 18 12
125 C
Fig 4. RDS(ON) - Tj
50
ID= 4A Pulse Test
Drain to Source On-Resistance RDS(ON) (mΩ)
Drain Current ID (A)
40 30
VGS=2.5V
20 10 0 -75
VGS=4.5V
6 0 0 0.5
25 C -25 C
1.0
1.5
2.0
2.5
-50
-25
0
25
50
75
100 125 150
Gate to Source Voltage VGS (V)
Junction Temperature Tj ( C )
Fig 5. Vth - Tj
2.0
Fig 6. IS - VSD
100
Gate Threshold Voltage Vth (V)
1.6 1.2 0.8 0.4 0
Reverse Drain Current IS (A)
Common Source VGS = VDS, ID = 250µA Pulse Test
10
1
85 C 25 C -40 C
0.1
-75
-50
-25
0
25
50
75
100 125 150
0.01 0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
Junction Temperature Tj ( C)
Source to Drain Forward Voltage VSD (V)
2008. 12. 19
Revision No : 3
3/5
KMC7D0CN20CA
Fig 7. C - VDS
VGS = 0 f =1MHz
Fig 8. VGS - Qg
Gate to Source Voltage VGS (V)
5 VDS = 10V ID = 7A
104
Capacitance C (pF)
4
103
Ciss
Coss
3
102
Crss
2
1
101 10-2
0
10-1
1
101
102
0
1.5
3.0
4.5
6.0
7.5
Drain to Source Voltage VDS (V)
Gate Charge Qg (nC)
Fig 9. Safe Operating Area
102
Operating in this area is Limited by RDS(ON)
200µs
Drain Current ID (A)
101
1ms
1
DC
10ms 100ms
10-1
VGS = 4.5V Single Pulse Ta = 25 C
10-2 10-2
10-1
1
101
102
Drain to Source Voltage VDS (V)
Fig 10. Transient Thermal Response Curve
Normalized Transient Thermal Resistance
101
1
Duty Cycle 0.5 0.2 0.1 PDM t1 t2 - Duty Cycle, D=t1/t2
10-1 0.05
0.02 Single Pulse
- RthJA = 10-2 10-1 1 101 102
10-2 -3 10
Tj(max) - Ta PD 103
Square Wave Pulse Duration tw (sec)
2008. 12. 19
Revision No : 3
4/5
KMC7D0CN20CA
Fig 11. Gate Charge
VGS 10 V
Schottky Diode
ID
0.5
VDSS ID 1.0 mA VDS VGS
Q Qgs Qgd Qg
Fig 12 . Resistive Load Switching
RL
VDS
90%
0.5 VDSS 6Ω VDS 4.0 V
VGS
10% td(on) tr ton td(off)
VGS
tf toff
2008. 12. 19
Revision No : 3
5/5
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