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KMC7D0CN20CA_0812

KMC7D0CN20CA_0812

  • 厂商:

    KEC

  • 封装:

  • 描述:

    KMC7D0CN20CA_0812 - Common N-Ch Trench MOSFET - KEC(Korea Electronics)

  • 数据手册
  • 价格&库存
KMC7D0CN20CA_0812 数据手册
SEMICONDUCTOR TECHNICAL DATA General Description Switching regulator and DC-DC Converter applications. It’s mainly suitable for Li-ion battery pack. 8 KMC7D0CN20CA Common N-Ch Trench MOSFET C D 5 A FEATURES VDSS=20V, ID=7A. Low Drain to Source On Resistance. : RDS(ON)=20.5m (Max.) @ VGS=4.5V : RDS(ON)=21.0m (Max.) @ VGS=4.0V : RDS(ON)=22.5m (Max.) @ VGS=3.1V : RDS(ON)=26.0m (Max.) @ VGS=2.5V ESD Protection. Super High Dense Cell Design. 1 4 E1 E B A1 DIM A A1 B GAUGE PLANE C D E E1 L MILLIMETERS 1.2 MAX 0.15 MAX _ 0.28 + 1 0.65 Typ. _ 3.0 + 0.10 _ 6.40 + 0.20 _ 4.40 + 0.10 _ 0.50 + 0.20 0.25 L MAXIMUM RATING (Ta=25 CHARACTERISTIC Drain to Source Voltage Gate to Source Voltage DC Drain Current ) SYMBOL VDSS VGSS ID * IDP * IS * RATING 20 12 7 A 28 1.7 1.5 150 -55 150 83.3 /W A W UNIT V V Marking TSSOP-8 Type Name Pulsed Source to Drain Diode Current Drain Power Dissipation Ta = 25 KMC7D0 CN20CA PD * Tj Tstg RthJA* Maximum Junction Temperature Storage Temperature Range Thermal Resistance, Junction to Ambient Lot No. Note > *Surface Mounted on 1” 1” FR4 Board, t≤10sec PIN CONNECTION (TOP VIEW) D S1 S1 G1 1 2 3 4 8 7 6 5 D S2 S2 G2 1 2 3 4 Rg Rg 8 7 6 5 2008. 12. 19 Revision No : 3 1/5 KMC7D0CN20CA ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Static Drain to Source Breakdown Voltage Drain Cut-off Current Gate to Source Leakage Current Gate Threshold Voltage BVDSS IDSS IGSS Vth VGS=0V, ID=250 A VDS=16V, VGS=0V VGS= 10V, VDS=0V VDS=VGS, ID=250 A VGS=4.5V, ID=4.0A Drain to Source On Resistance RDS(ON)* VGS=4.0V, ID=3.0A VGS=3.1V, ID=3.0A VGS=2.5V, ID=3.0A Gate Resistance Forward Transconductance Dynamic Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Source to Drain Diode Ratings Source to Drain Diode Forward Voltage Note > *Pulse test : Pulse width 300 VSD* VGS=0V, IS=1.7A 0.8 1.2 V Qg* Qgs* Qgd* td(on) tr td(off) tf VDD=10V, VGS=4.0V ID=4.0A, RG=6 VDS=10V, ID=7A VGS=4.0V 6.7 0.8 3.2 1.0 2.1 8.5 7.5 s nC Rg gfs* f=1MHz VDS=5V, ID=5A 20 0.5 0.7 16.5 17.0 18.5 20.5 2.5 12 1 10 1.5 20.5 21.0 22.5 26.0 k S m V A A V ) TEST CONDITION MIN. TYP. MAX. UNIT SYMBOL , Duty Cycle 2%. 2008. 12. 19 Revision No : 3 2/5 KMC7D0CN20CA Fig 1. ID - VDS 30 30 VGS=4.5,4.0,3.1,2.5V Fig 2. RDS(ON) - ID Drain to Source On-Resistance RDS(ON) (mΩ) Common Source Ta =25 C Pulse Test Drain Current ID (A) 24 18 25 20 VGS=2.5V VGS=4.5V VGS=2V 15 10 5 0 12 6 0 0 1 2 3 4 5 0 6 12 18 24 30 Drain to Source Voltage VDS (V) Drain Current ID (A) Fig 3. ID - VGS 30 24 18 12 125 C Fig 4. RDS(ON) - Tj 50 ID= 4A Pulse Test Drain to Source On-Resistance RDS(ON) (mΩ) Drain Current ID (A) 40 30 VGS=2.5V 20 10 0 -75 VGS=4.5V 6 0 0 0.5 25 C -25 C 1.0 1.5 2.0 2.5 -50 -25 0 25 50 75 100 125 150 Gate to Source Voltage VGS (V) Junction Temperature Tj ( C ) Fig 5. Vth - Tj 2.0 Fig 6. IS - VSD 100 Gate Threshold Voltage Vth (V) 1.6 1.2 0.8 0.4 0 Reverse Drain Current IS (A) Common Source VGS = VDS, ID = 250µA Pulse Test 10 1 85 C 25 C -40 C 0.1 -75 -50 -25 0 25 50 75 100 125 150 0.01 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 Junction Temperature Tj ( C) Source to Drain Forward Voltage VSD (V) 2008. 12. 19 Revision No : 3 3/5 KMC7D0CN20CA Fig 7. C - VDS VGS = 0 f =1MHz Fig 8. VGS - Qg Gate to Source Voltage VGS (V) 5 VDS = 10V ID = 7A 104 Capacitance C (pF) 4 103 Ciss Coss 3 102 Crss 2 1 101 10-2 0 10-1 1 101 102 0 1.5 3.0 4.5 6.0 7.5 Drain to Source Voltage VDS (V) Gate Charge Qg (nC) Fig 9. Safe Operating Area 102 Operating in this area is Limited by RDS(ON) 200µs Drain Current ID (A) 101 1ms 1 DC 10ms 100ms 10-1 VGS = 4.5V Single Pulse Ta = 25 C 10-2 10-2 10-1 1 101 102 Drain to Source Voltage VDS (V) Fig 10. Transient Thermal Response Curve Normalized Transient Thermal Resistance 101 1 Duty Cycle 0.5 0.2 0.1 PDM t1 t2 - Duty Cycle, D=t1/t2 10-1 0.05 0.02 Single Pulse - RthJA = 10-2 10-1 1 101 102 10-2 -3 10 Tj(max) - Ta PD 103 Square Wave Pulse Duration tw (sec) 2008. 12. 19 Revision No : 3 4/5 KMC7D0CN20CA Fig 11. Gate Charge VGS 10 V Schottky Diode ID 0.5 VDSS ID 1.0 mA VDS VGS Q Qgs Qgd Qg Fig 12 . Resistive Load Switching RL VDS 90% 0.5 VDSS 6Ω VDS 4.0 V VGS 10% td(on) tr ton td(off) VGS tf toff 2008. 12. 19 Revision No : 3 5/5
KMC7D0CN20CA_0812 价格&库存

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