KMD7D5P40QA

SEMICONDUCTOR TECHNICAL DATA GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for battery protection circuit. D KMD7D5P40QA P-Ch Trench MOSFET H T P G L FEATURES ・VDSS=-40V, ID=-7.5A. ・Drain-Source ON Resistance. RDS(ON)=30mΩ(Max.) @ VGS=-10V RDS(ON)=37mΩ(Max.) @ VGS=-4.5V ・Super High Dense Cell Design 1 4 8 5 B1 B2 A MOSFET Maximum Ratings (Ta=25℃ Unless otherwise noted) CHARACTERISTIC Drain Source Voltage Gate Source Voltage Drain Current DC@Ta=25℃ Pulsed Drain Source Diode Forward Current Drain Power Dissipation DC@Ta=25℃ SYMBOL PATING VDSS VGSS I D* IDP IS PD* Tj Tstg RthJA* -40 ±20 -7.5 -30 -30 2.0 150 -55~150 62.5 UNIT V V A A A W ℃ ℃ ℃/W DIM A B1 B2 D G H L P T MILLIMETERS _ 4.85 + 0.2 _ 3.94 + 0.2 _ 6.02 + 0.3 _ 0.4 + 0.1 0.15+0.1/-0.05 _ 1.63 + 0.2 _ 0.65 + 0.2 1.27 0.20+0.1/-0.05 FLP-8 Maximum Junction Temperature Storage Temperature Range Thermal Resistance, Junction to Ambient Note : *Surface Mounted on 1”× 1” FR4 Board, t≤10sec KMD7D5P 40QA PIN CONNECTION (TOP VIEW) S S S G 1 8 D D D D 1 2 3 8 7 6 5 2 7 3 6 4 4 5 2008. 9. 17 Revision No : 1 1/4 KMD7D5P40QA ELECTRICAL CHARACTERISTICS (Ta=25℃) UNLESS OTHERWISE NOTED CHARACTERISTIC Static Drain-Source Breakdown Voltage Drain Cut-off Current Gate Leakage Current Gate Threshold Voltage Drain-Source ON Resistance Forward Transconductance Dynamic Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Source-Drain Diode Ratings Source-Drain Forward Voltage VSDF* VGS=0V, IDR=-7.5A, -1.2 V Rg Qg* Qgs* Qgd* td(on)* tr* td(off)* tf* VDD=-20V, VGS=-10V ID=-7.5A, Rg=4.7Ω VDS=-32V, VGS=-10V, ID=-7.5A VGS=0V, VDS=0V, f=1MHz 6 27 3.2 8.1 3.4 3.9 1.4 7.7 μ s nC kΩ BVDSS IDSS IGSS Vth RDS(ON)* gfs* VGS=0V, IDS=-250μ A VDS=-40V, VGS=0V VGS=±20V, VDS=0V VDS=VGS, ID=-250μ A VGS=-10V, ID=-3.8A VGS=-4.5V, ID=-3.8A VDS=-10V, ID=-3.8A -40 -1.0 24 29 1.2 -10 ±10 -3.0 30 37 V μ A μ A V mΩ S SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Note) *Pulse Test : Pulse width ≤ 300㎲ , Duty cycle ≤ 2% 2008. 9. 17 Revision No : 1 2/4 KMD7D5P40QA Fig1. ID - VDS Drain-Source On Resistance RDS(ON) (mΩ) -30 -25 -20 -15 -10 -5 0 0 -1 -2 -3 -4 -5 VGS=-3.0V -3.5V -10V -4.5V -5.0V Fig2. RDS(ON)-ID 40 Common Source Ta=25 C Pulse Test VGS=-4.5V -4.0V Drain Current ID (A) 30 20 VGS=-10V 10 0 0 -10 -20 -30 -40 Drain - Source Voltage VDS (V) Drain - Current ID (A) Fig3. ID - VGS -30 Common Source Fig4. RDS(on) - Tj Drain-Source On Resistance RDS(ON) (mΩ) 40 Common Source ID=-3.8A Pulse Test VGS=-4.5V Drain Current ID (A) VDS=VGS -25 Pulse Test 30 -20 -15 -10 Ta=125 C -55 C 20 VGS=-10V 10 -5 25 C 0 0 -1 -2 -3 -4 -5 0 -75 -50 -25 0 25 50 75 100 125 150 Gate Source Volatage VGS (V) Junction Temperature Tj ( C ) Fig5. Vth - Tj Gate Threshold Voltage Vth (V) -5 Common Source VGS=VDS ID=-250µA -4 Pulse Test Fig6. IS - VSDF -100 Reverse Drain Current IS (A) -10 Tj=25 C -3 -2 -1 0 -75 Tj=125 C -1 -0.1 -50 -25 0 25 50 75 100 125 150 -0.01 -0.2 -0.4 -0.6 -0.8 -1 -1.2 Junction Temperature Tj ( C) Source - Drain Forward Voltage VSDF (V) 2008. 9. 17 Revision No : 1 3/4 KMD7D5P40QA Fig7. Qg - VGS -10 Fig8. Safe Operation Area -102 LIM IT Gate - Source Voltage VGS (V) Drain Current ID (A) -8 VDS = -32V ID = -7.5A -101 R DS(O N) 100µs 1ms -6 -100 10ms 100ms -4 -2 -10-1 0 0 6 12 18 24 30 -10-2 -10-2 VGS= -10V SINGLE PULSE Ta= 25 C 1s 10s DC -10-1 -100 -101 -102 Gate - Charge Qg (nC) Drain - Source Voltage VDS (V) Fig9. Transient Thermal Response Curve 10 1 Normalized Effective Transient Thermal Resistanc 10 0 D = 0.5 0.2 10 -1 0.1 0.05 0.02 10 -2 0.01 PDM t1 t2 1. Duty Cycle D = t1/t2 2. Per unit Base = RthJA=62.5 C/W SINGLE 10 -3 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 Square wave pulse Duration tw (sec) 2008. 9. 17 Revision No : 1 4/4