KN4400S_07

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Complementary to the KN4402S/4403S KN4400S/4401S EPITAXIAL PLANAR NPN TRANSISTOR L E B L 2 3 1 MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range ) SYMBOL VCBO VCEO VEBO IC PC * Tj Tstg RATING 60 40 6 600 350 150 -55 150 0.6 ) UNIT V V C N P P DIM A B C D E G H J K L M N P MILLIMETERS _ 2.93 + 0.20 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 A G H M 1. EMITTER V mA mW 2. BASE 3. COLLECTOR K SOT-23 Note : * Package Mounted On 99.5% Alumina 10 8 Marking Type Name Lot No. Lot No. ZTA Type Name ZUA MARK SPEC TYPE KN4400S KN4401S MARK ZTA ZUA 2007. 11. 12 Revision No : 2 J D 1/3 KN4400S/4401S ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage KN4401S KN4400S KN4401S KN4400S DC Current Gain * KN4401S KN4400S KN4401S KN4400S KN4401S Collector-Emitter Saturation Voltage * SYMBOL ICEX ICBO IEBO V(BR)CBO V(BR)CEO V(BR)EBO hFE(1) hFE(1) hFE(2) hFE(2) hFE(3) hFE(3) hFE(4) hFE(4) hFE(5) VCE(sat) 1 VCE(sat) 2 VBE(sat) 1 VBE(sat) 2 fT Cob TEST CONDITION VCE=35V, VEB=0.4V VCB=60V, IE=0 VEB=6V, IC=0 IC=100 A, IE=0 IC=1mA, IB=0 IE=100 A, IC=0 VCE=1V, IC=0.1mA VCE=1V, IC=1mA MIN. 60 40 6.0 20 20 40 40 80 50 100 20 40 0.75 200 250 TYP. MAX. 100 100 100 150 300 0.4 V 0.75 0.95 V 1.2 MHz 6.5 pF UNIT nA nA nA V V V VCE=1V, IC=10mA VCE=1V, IC=150mA VCE=2V, IC=500mA IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA IC=500mA, IB=50mA VCE=10V, IC=20mA, f=100MHz VCB=5V, IE=0, f=1MHz Base-Emitter Saturation Voltage KN4400S Transition Frequency KN4401S Collector Output Capacitance * * Pulse Test : Pulse Width 300 S, Duty Cycle 2%. 2007. 11. 12 Revision No : 2 2/3 KN4400S/4401S hFE - IC 1k 20 VCE=1V IE=0 Cob - VCB DC CURRENT GAIN hFE CAPACITANCE Cob (pF) 500 300 f=100kHz 10 5 3 100 50 30 10 1 3 10 30 100 300 1k 1 1 3 10 30 100 300 COLLECTOR CURRENT IC (mA) COLLECTOR-BASE VOLTAGE VCB (V) VBE(sat), VCE(sat) - IC IC/IB=10 SAFE OPERATING AREA COLLECTOR CURRENT IC (mA) 10000 IC MAX(PULSE)* 10mS* 10 SATURATION VOLTAGE VBE(sat), VCE(sat) (V) 5 3 1 0.5 0.3 0.1 0.05 0.03 0.01 1 VBE(sat) 1000 IC MAX(CONTINUOUS) 1mS* 100 DC OPERATION(Ta=25 C ) VCE(sat) 10 * SINGLE NONREPETITIVE PULSE Ta=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE 3 10 30 100 300 1k 1 0.1 1 10 100 COLLECTOR CURRENT IC (mA) COLLECTOR-EMITTER VCE (V) 2007. 11. 12 Revision No : 2 3/3