KR32S031M

SEMICONDUCTOR TECHNICAL DATA 300 POWER LOW DROPOUT REGULATOR KR32S018M/F~KR32S033M/F BIPOLAR LINEAR INTEGRATED CIRCUIT The KR32SXXXM/F is an efficient linear voltage regulator with very low dropout voltage (Typically 10mV at light loads and 250mV at 300 ) The KR32SXXXM/F can be enabled, or shut down by a CMOS or TTL G 1 E B 5 DIM MILLIMETERS _ A 2.9 + 0.2 B C 1.6+0.2/-0.1 _ 0.70 + 0.05 _ 0.4 + 0.1 2.8+0.2/-0.3 _ 1.9 + 0.2 0.95 _ 0.16 + 0.05 0.00-0.10 0.25+0.25/-0.15 0.60 0.55 compatible signal. When disabled. power consumption drops nearly to zero. Dropout ground current is minimized to help prolong battery life. Other key features include reversed battery protechion, current limiting, over temperature shutdown, and low noise performance with an ultra-low-noise option A F 2 D 4 D E F G H I J K L G 3 C High output voltage accuracy : 1% Low quiescent current. : IQ(OFF) =3 Very low ground current : 1.8 (IOUT=150 ) Low dropout voltage : 250mV (IOUT=300 ) Built-in ON/OFF control terminal Built -in over current , Over heat protection function Reverse-battery protection J 1. VIN 2. GND 3. ON/OFF CONTROL 4. BYPASS 5. VOUT APPLICATIONS Laptop, notebook, and palmtop computers Cellular telephones and battery-powered equipment Consumer and personal electronics PC Card VCC and VPP regulation and switching SMPS post-regulator/dc-to-dc modules High-effciency linear power supplies 1 2 3 5 4 A K B C D J E G LINE-UP H I F TSV VOUT (V) ITEM 1.8 2.5 2.6 2.7 2.8 2.85 2.9 3.0 3.1 3.3 KR32S018M KR32S025M KR32S026M KR32S027M KR32S028M KR32S285M KR32S029M KR32S030M KR32S031M KR32S033M MARKING B18 B25 B26 B27 B28 B2J B29 B30 B31 B33 SOT-89-5 ITEM KR32S018F KR32S025F KR32S026F KR32S027F KR32S028F KR32S285F KR32S029F KR32S030F KR32S031F KR32S033F MARKING D1 D2 D3 D4 D5 D6 D7 D8 D9 D0 1. BYPASS 2. GND 3. ON/OFF CONTROL 4. VIN 5. VOUT * Heat sink is common to 2.GND 1 2 3 2007. 2. 9 Revision No : 0 I J FEATURES L H 1 5 2 3 4 TSV DIM A B C D E F G H I J K MILLIMETERS _ 4.50 + 0.10 _ 3.00 + 0.03 _ 1.60 + 0.10 _ 0.90 + 0.08 _ 2.50 + 0.05 _ 4.30 + 0.15 _ 0.42 + 0.03 _ 1.50 + 0.03 _ 0.47 + 0.03 _ 0.31 + 0.02 _ 1.50 + 0.07 SOT-89-5 1/6 KR32S018M/F~KR32S033M/F MARKING 5 4 PIN DESCRIPTIONS Lot No. Type Name PIN NO. 1 2 NAME VIN GND ON/OFF Control Supply Input Ground Enable/Shutdown (Input):CMOS conpatible input. Logic high = Enable, Logic low or open = Shutdown Reference Bypass : Connect external 470pF capacitor to GND to reduce output noise. May be left open Regulator Output FUNCTION 3 1 2 3 < TSV > 4 Bypass 5 VOUT MARKING Lot No. PIN DESCRIPTIONS PIN NO. NAME FUNCTION Reference Bypass : Connect external 470pF capacitor to GND to reduce output Ground Enable/Shutdown (Input):CMOS conpatible input. Logic high = Enable, Logic low or open = Shutdown Supply Input Regulator Output 5 4 1 Type Name Bypass 2 1 2 3 GND ON/OFF Control VIN VOUT 3 < SOT-89-5 > 4 5 Fig. 1 BLOCK DIAGRAM Fig. 2 TEST CIRCUIT / APPLICATION CIRCUIT VIN 1 5 VOUT VIN = 3.8V COUT BYPASS CBYPASS 4 + Bandgap Ref. 1 5 VOUT = 2.8V COUT = 2.2 µF (tantalum) 2 KR32S028M ON/OFF CONTROL ON/OFF 3 CONTROL Current Limit Thermal Shutdown 3 4 CBYPASS = 470pF 2 GND 2007. 2. 9 Revision No : 1 2/6 KR32S018M/F~KR32S033M/F MAXIMUM RATINGS (Ta=25 CHARACTERISTIC Supply Input Voltage ON/OFF Control Voltage Output Current TSV Power Dissipation Junction Temperature Operating Junction Temperature Storage Temperature Note) Package mounted on a ceramic board. (600m 2 ) SYMBOL VIN VC IOUT RATING 16 5 300 900 150 -40~125 -55~150 mW UNIT V V (Note) SOT-89-5 PD Tj Topr Tstg 0.8m) ELECTRICAL CHARACTERISTICS (Unless otherwise specified, VIN=VOUT+1V, IOUT=100 CHARACTERISTIC KR32S018M/F KR32S025M/F KR32S026M/F KR32S027M/F Output Voltage KR32S028M/F KR32S285M/F KR32S029M/F KR32S030M/F KR32S031M/F KR32S033M/F Load Regulation Line Regulation Reg Load Reg Line VD-1 Dropout Voltage VD-2 VD-3 VD-4 Temperature Coefficient of output voltage Ripple Rejection Output Noise Voltage Output ON-state voltage for control Output ON-state current for control Output OFF-state voltage for control Output OFF-state current for control TCVo RR VNO VC(ON) IC(ON) VC(OFF) IC(OFF-1) IC(OFF-2) IQ1 Quiescent Current IQ2 IQ3 IQ4 Quiescent Current (OFF Mode) IQ(OFF-1) IQ(OFF-2) VOUT SYMBOL , COUT=4.7 , Tj=25 ) MIN. 1.782 2.475 2.574 2.673 2.772 2.8215 2.871 2.97 3.069 3.267 TYP. 1.8 2.5 2.6 2.7 2.8 2.85 2.9 3.0 3.1 3.3 0.05 0.009 10 115 175 250 40 75 30 5 0.01 0.01 80 350 1.8 4.0 0.05 0.10 MAX. 1.818 2.525 2.626 2.727 2.828 2.8785 2.929 3.03 3.131 3.333 0.7 0.05 60 175 300 400 80 20 0.4 -1 -2 130 650 2.5 5.5 3 8 V rms V ppm/ % %/V V UNIT TEST CONDITION VIN=VOUT+1V Io=100 ~300 VIN=VOUT+1V~12V IOUT=100 IOUT=50 IOUT=150 IOUT=300 Tj=-40 f=120Hz IOUT=50 , COUT=2.2 , CBYPASS=470pF VC=2.0V VC=0.4V VC=0.18V VC=3V, IOUT=100 VC=3V, IOUT=50 VC=3V, IOUT=150 VC=3V, IOUT=300 VC=0.4V VC=0.18V 125 2.0 2 - 2007. 2. 9 Revision No : 1 3/6 KR32S018M/F~KR32S033M/F fIN - R.R (1) RIPPLE REJECTION R.R (dB) VIN= 3.6V VOUT= 2.6V fIN - R.R (2) RIPPLE REJECTION R.R (dB) 0 VIN= 3.6V VOUT= 2.6V 0 -20 -40 -60 -80 IOUT= 100mA COUT= 1µF -20 -40 -60 -80 -100 10 IOUT = 100µA COUT = 2.2µF CBYP = 0.01µF -100 10 100 1k 10k 100k 1M 10M 100 1k 10k 100k 1M 10M INPUT FREQUENCY fIN (Hz) INPUT FREQUENCY fIN (Hz) fIN - R.R (3) RIPPLE REJECTION R.R (dB) VIN= 3.6V VOUT= 2.6V fIN - R.R (4) RIPPLE REJECTION R.R (dB) 0 -20 -40 -60 -80 -100 10 IOUT = 1mA COUT = 2.2µF CBYP = 0.01µF VIN= 3.6V VOUT= 2.6V 0 -20 -40 -60 -80 IOUT= 1mA COUT= 1µF -100 10 100 1k 10k 100k 1M 10M 100 1k 10k 100k 1M 10M INPUT FREQUENCY fIN (Hz) INPUT FREQUENCY fIN (Hz) fIN - R.R (5) 0 0 VIN= 3.6V fIN - R.R (6) VIN= 3.6V RIPPLE REJECTION R.R (dB) RIPPLE REJECTION R.R (dB) -20 -40 -60 -80 VOUT= 2.6V -20 -40 -60 -80 -100 10 VOUT= 2.6V IOUT= 10mA COUT= 1µF IOUT = 10mA COUT = 2.2µF CBYP = 0.01µF -100 10 100 1k 10k 100k 1M 10M 100 1k 10k 100k 1M 10M INPUT FREQUENCY fIN (Hz) INPUT FREQUENCY fIN (Hz) 2007. 2. 9 Revision No : 1 4/6 KR32S018M/F~KR32S033M/F fIN - R.R (7) RIPPLE REJECTION R.R (dB) RIPPLE REJECTION R.R (dB) 0 VIN= 3.6V VOUT= 2.6V fIN - R.R (8) 0 VIN= 6V VOUT= 5V -20 -40 -60 -80 IOUT= 100mA COUT= 1µF -20 -40 -60 -80 -100 10 IOUT = 100mA COUT = 2.2µF CBYP = 0.01µF -100 10 100 1k 10k 100k 1M 10M 100 1k 10k 100k 1M 10M INPUT FREQUENCY fIN (Hz) INPUT FREQUENCY fIN (Hz) VD - R.R (1) RIPPLE REJECTION R.R (dB) RIPPLE REJECTION R.R (dB) 60 50 1mA VD - R.R (2) 100 90 80 70 60 50 40 30 20 10 0 0 0.1 0.2 COUT = 2.2µF CBYP = 0.01µF 10mA IOUT = 100mA 1mA 40 10mA 30 20 10 0 IOUT = 100mA COUT = 1µF 0 0.1 0.2 0.3 0.4 0.3 0.4 DROPOUT VOLTAGE VD (V) DROPOUT VOLTAGE VD (V) CBYPASS - TIME 104 IOUT - VD DROPOUT VOLTAGE VD (mV) 400 TURN ON TIME (µs) 300 103 200 102 100 101 1 10 102 103 104 0 0 100 200 300 CAPACITANCE CBYPASS (pF) OUTPUT CURRNET IOUT (mA) 2007. 2. 9 Revision No : 1 5/6 KR32S018M/F~KR32S033M/F f - NOISE (1) 10 1 10-1 10-2 10 -3 f - NOISE (2) 10 1 100mA 10mA, COUT = 1µF NOISE (mV/ Hz ) NOISE (mV/ Hz ) 10-1 10-2 1mA 10mA 10-4 10 1mA COUT = 1µF CBYP = 10nF 10 -3 VOUT = 5V COUT = 10µF Electrolytic VOUT= 5V 100 1k 10k 100k 1M 10M 10-4 10 100 1k 10k 100k 1M 10M FREQUENCY (Hz) FREQUENCY (Hz) f - NOISE (3) 10 10 f - NOISE (4) NOISE (mV/ Hz ) 1 10-1 10-2 10 -3 NOISE (mV/ Hz ) 1 10-1 10-2 10 -3 10mA 100mA 100mA 10mA VOUT = 5V COUT = 22µF Tantalum CBYP = 10nF 1mA 10-4 10 100 1k 10k 100k 1M 10M 10-4 10 VOUT = 5V COUT = 10µF Electrolytic CBYP = 100pF 1mA 100 1k 10k 100k 1M 10M FREQUENCY (Hz) FREQUENCY (Hz) f - NOISE (5) 10 1 -1 f - NOISE (6) 10 1 10mA -1 NOISE (mV/ Hz ) 10mA 100mA 10 NOISE (mV/ Hz ) 10 100mA 10-2 10-3 COUT = 10µF 10-4 10 Electrolytic CBYP = 1nF VOUT = 5V 1mA 10-2 10-3 COUT = 10µF 10-4 10 Electrolytic CBYP = 10nF VOUT = 5V 1mA 100 1k 10k 100k 1M 10M 100 1k 10k 100k 1M 10M FREQUENCY (Hz) FREQUENCY (Hz) 2007. 2. 9 Revision No : 1 6/6