KR52S028M

SEMICONDUCTOR TECHNICAL DATA 500mA POWER LOW DROPOUT REGULATOR The KR52SXXXM/F is an efficient linear voltage regulator with very low dropout voltage(Typically 10mV at light loads and 350mV at 500mA) The KR52SXXXM/F can be enabled, or shut down by a CMOS or TTL G KR52S018M/F~ KR52S033M/F BIPOLAR LINEAR INTEGRATED CIRCUIT E B 1 5 DIM MILLIMETERS _ A 2.9 + 0.2 B C 1.6+0.2/-0.1 _ 0.70 + 0.05 _ 0.4 + 0.1 2.8+0.2/-0.3 _ 1.9 + 0.2 0.95 _ 0.16 + 0.05 0.00-0.10 0.25+0.25/-0.15 0.60 0.55 compatible signal. When disabled. power consumption drops nearly to zero. A Dropout ground current is minimized to help prolong battery life. Other key features include reversed battery protechion, current limiting, over temperature shutdown, and low noise performance with an ultra-low-noise option 2 D 4 D E F G H I J K L F G 3 C L FEATURES High Output Voltage Accuracy : 1% Low Quiescent Current. : IQ(OFF) =3 Very Low Ground Current : 4.0mA(IOUT = 300mA) Low Dropout Voltage : 350mV(IOUT=500mA) Built-in ON/OFF control Terminal Built -in Over Current , Over Heat Protection Function Reverse-Battery Protection J 1. INPUT 2. GND 3. ON/OFF CONTROL 4. NOISE BYPASS 5. OUTPUT A APPLICATIONS Laptop, notebook, and palmtop computers Cellular telephones and battery-powered equipment Consumer and personal electronics PC Card VCC and VPP regulation and switching SMPS post-regulator/dc-to-dc modules High-effciency linear power supplies G 1 5 B C 4 E D 2 3 I H DIM A B C D E F G H I J K MILLIMETERS _ 4.50 + 0.10 _ 3.00 + 0.03 _ 1.60 + 0.10 _ 0.90 + 0.08 _ 2.50 + 0.05 _ 4.30 + 0.15 _ 0.42 + 0.03 _ 1.50 + 0.03 _ 0.47 + 0.03 _ 0.31 + 0.02 _ 1.50 + 0.07 LINE-UP 1 2 3 TSV VOUT (V) ITEM 1.8 2.5 2.6 2.7 2.8 2.85 2.9 3.0 3.1 3.3 KR52S018M KR52S025M KR52S026M KR52S027M KR52S028M KR52S285M KR52S029M KR52S030M KR52S031M KR52S033M MARKING C18 C25 C26 C27 C28 C2J C29 C30 C31 C33 SOT-89-5 ITEM * KR52S018F * KR52S025F * KR52S026F * KR52S027F * KR52S028F * KR52S285F * KR52S029F * KR52S030F * KR52S031F * KR52S033F MARKING E1 E2 E3 E4 E5 E6 E7 E8 E9 E0 1. BYPASS 2. GND 3. ON/OFF CONTROL 4. VIN 5. VOUT * Heat sink is common to 2.GND SOT-89-5 * : Under development 2007. 3. 19 Revision No : 2 F I J H 1 5 2 3 4 TSV K J 1/5 KR52S018M/F ~ KR52S033M/F MARKING 5 4 PIN DESCRIPTIONS Lot No. Type Name PIN NO. 1 2 3 NAME VIN GND ON/OFF Control Supply Input Ground Enable/Shutdown (Input):CMOS conpatible input. Logic high = Enable, Logic low or open = Shutdown Reference Bypass : Connect external 470pF capacitor to GND to reduce output noise. May be left open Regulator Output FUNCTION 1 2 3 < TSV > 4 5 Bypass VOUT MARKING Lot No. PIN DESCRIPTIONS PIN NO. NAME Bypass GND ON/OFF Control VIN VOUT FUNCTION Reference Bypass : Connect external 470pF capacitor to GND to reduce output Ground Enable/Shutdown (Input):CMOS conpatible input. Logic high = Enable, Logic low or open = Shutdown Supply Input Regulator Output 5 4 1 Type Name 2 1 2 3 3 < SOT-89-5 > 4 5 Fig. 1 BLOCK DIAGRAM Fig. 2 TEST CIRCUIT / APPLICATION CIRCUIT VIN 1 5 VOUT VIN = 3.8V COUT BYPASS CBYPASS 4 + Bandgap Ref. 1 5 VOUT = 2.8V COUT = 22µF (tantalum) 2 KR52S028M/F ON/OFF 3 CONTROL Current Limit Thermal Shutdown ON/OFF CONTROL 3 4 2 CBYPASS = 470pF GND 2007. 3. 19 Revision No : 2 2/5 KR52S018M/F ~ KR52S033M/F MAXIMUM RATINGS (Ta=25 CHARACTERISTIC Supply Input Voltage ON/OFF Control Voltage Output Current Power Dissipation Operating Junction Temperature Storage Temperature (Note) (SOT-89-5) Topr Tstg -40~125 -55~150 ) SYMBOL VIN VC IOUT (TSV) 900 mW RATING 16 5 500 UNIT V V mA ELECTRICAL CHARACTERISTICS (Unless otherwise specified, VIN=VOUT+1V, IOUT=100 CHARACTERISTIC KR52S018M/F KR52S025M/F KR52S026M/F KR52S027M/F KR52S028M/F Output Voltage KR52S285M/F KR52S029M/F KR52S030M/F KR52S031M/F KR52S033M/F Load Regulation Line Regulation Reg Load Reg Line V D1 Dropout Voltage V D2 V D3 V D5 Ripple Rejection Output Noise Voltage Output ON-state voltage for control Output ON-state current for control Output OFF-state voltage for control Output OFF-state current for control RR VNO VC(ON) IC(ON) VC(OFF) IC(OFF) IQ1 Quiescent Current IQ2 IQ3 IQ4 Quiescent Current (OFF Mode) Short Circuit Current IQ(OFF1) IQ(OFF2) ISC VOUT SYMBOL , COUT=4.7 , Tj=25 ) MIN. 1.782 2.475 2.574 2.673 TYP. 1.8 2.5 2.6 2.7 2.8 2.85 2.9 3.0 3.1 3.3 10 115 175 350 75 30 5 0.01 80 350 1.8 12 0.05 0.10 MAX. 1.818 2.525 2.626 2.727 2.828 V 2.8215 2.871 2.97 3.069 3.267 2.8785 2.929 3.03 3.131 3.333 2.0 0.05 60 175 300 500 20 0.4 1 130 650 2.5 20 3 8 A V rms V % %/V UNIT TEST CONDITION VIN=VOUT+1V 2.772 100 IO 0.5A 2.0 - VIN=VOUT+1V~12V IOUT=100 IOUT=50mA IOUT=150mA IOUT=500mA f=120Hz IOUT=50 , COUT=2.2 CBYPASS= 470pF VC=2.0V VC=0.4V VC=3V, IOUT=100 VC=3V, IOUT=50 VC=3V, IOUT=150 VC=3V, IOUT=500 VC=0.4V VC=0.18V VO=0A 0.51 2007. 3. 19 Revision No : 2 3/5 KR52S018M/F ~ KR52S033M/F Fig. 1 IGND - IO 15 12.5 75 80 Fig. 2 Iq - VIN IGND (mA) 10 7.5 5 65 2.5 0 0 100 200 300 400 500 60 3 4 6 8 10 12 14 16 Iq (µA) IO (mA) 70 VIN (V) Fig. 3 VD - IOUT 450 400 350 300 250 200 150 100 100 200 300 400 500 3.5 3.0 2.5 Fig. 4 VOUT - VIN VOUT (V) VD (mV) 2.0 1.5 1.0 0.5 IO = 100µA 0 3 4 6 8 10 12 14 16 IO (mA) VIN (V) Fig. 5 VOUT - IOUT RIPPLE REJECTION R.R (dB) 3.5 3.0 2.5 100 90 80 70 60 50 40 30 20 10 0 100 101 Fig. 6 f - R.R IO = 100µA VOUT (V) 2.0 1.5 1.0 0.5 0 0 100 200 300 400 500 600 700 740 760 780 102 103 104 105 IOUT (mA) FREQUENCY f (KHz) 2007. 3. 19 Revision No : 2 4/5 KR52S018M/F ~ KR52S033M/F Fig. 7 VOUT - TEMP 3 2.5 1.6 1.4 1.2 Fig. 8 VENH - TEMP IO = 100µA VENH (V) IO = 100µA 2 VO (V) 1.0 0.8 0.6 0.4 1.5 1 0.5 0 0.2 60 110 160 210 0 -40 -20 0 20 40 60 80 100 120 140 160 -40 10 TEAMPERATURE ( C) TEAMPERATURE ( C) Fig. 9 IGND - TEMP 100 90 80 70 IO = 100µA IGND (mV) 60 50 40 30 20 10 0 -40 -20 0 20 40 60 80 100 120 140 160 TEAMPERATURE ( C) 2007. 3. 19 Revision No : 2 5/5