KRA111S

SEMICONDUCTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES With Built-in Bias Resistors. Simplify Circuit Design. A G KRA110S~KRA114S EPITAXIAL PLANAR PNP TRANSISTOR L E B L Reduce a Quantity of Parts and Manufacturing Process. 2 3 1 P P C N EQUIVALENT CIRCUIT C B R1 DIM A B C D E G H J K L M N P MILLIMETERS _ 2.93 + 0.20 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 H M 1. EMITTER 2. BASE 3. COLLECTOR E K SOT-23 MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg RATING -50 -50 -5 -100 200 150 -55 150 UNIT V V V mA mW Marking MARK SPEC TYPE MARK KRA110S PK KRA111S PM KRA112S PN KRA113S PO KRA114S PP Type Name Lot No. 2002. 7. 9 Revision No : 2 J D 1/4 KRA110S~KRA114S ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency KRA110S KRA111S Input Resistor KRA112S KRA113S KRA114S KRA110S KRA111S Rise Time KRA112S KRA113S KRA114S KRA110S KRA111S Switching Time Storage Time KRA112S KRA113S KRA114S KRA110S KRA111S Fall Time KRA112S KRA113S KRA114S Note : * Characteristic of Transistor Only. tf tstg VO=-5V VIN=-5V RL=1k tr R1 SYMBOL ICBO IEBO hFE VCE(sat) fT * TEST CONDITION VCB=-50V, IE=0 VEB=-5V, IC=0 VCE=-5V, IC=-1mA IC=-10mA, IB=-0.5mA VCE=-10V, IC=-5mA MIN. 120 TYP. -0.1 250 4.7 10 100 22 47 0.2 0.065 0.4 0.1 0.15 2.0 1.7 3.0 2.0 1.5 0.3 0.3 1.7 0.8 1.5 MAX. -100 -100 -0.3 S k V MHz UNIT nA nA 2002. 7. 9 Revision No : 2 2/4 KRA110S~KRA114S h FE - I C COLLECTOR-EMITTER SATURATIN VOLTAGE V CE(sat) (V) -2 -1 -0.5 -0.3 -0.1 -0.05 -0.03 -0.01 -0.1 Ta=100 C Ta=25 C Ta=-25 C 2k DC CURRENT GAIN h FE 1k 500 300 100 50 30 KRA110S KRA110S I C /IB =20 VCE(sat) - I C Ta=100 C Ta=25 C Ta=-25 C VCE =-5V 10 -0.1 -0.3 -1 -3 -10 -30 -100 -0.3 -1 -3 -10 -30 -100 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER SATURATIN VOLTAGE V CE(sat) (V) 2k DC CURRENT GAIN h FE 1k 500 300 100 50 30 KRA111S h FE - I C -2 -1 -0.5 -0.3 -0.1 -0.05 -0.03 KRA111S I C /I B =20 VCE(sat) - I C Ta=100 C Ta=25 C Ta=-25 C Ta=100 C Ta=25 C Ta=-25 C VCE =-5V 10 -0.1 -0.3 -1 -3 -10 -30 -100 -0.01 -0.1 -0.3 -1 -3 -10 -30 -100 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER SATURATIN VOLTAGE VCE(sat) (V) 2k DC CURRENT GAIN h FE 1k 500 300 100 50 30 KRA112S h FE - I C -2 -1 -0.5 -0.3 -0.1 -0.05 -0.03 KRA112S IC /I B =20 VCE(sat) - I C Ta=100 C Ta=25 C Ta=-25 C Ta=100 C Ta=25 C Ta=-25 C VCE =-5V 10 -0.1 -0.3 -1 -3 -10 -30 -100 -0.01 -0.1 -0.3 -1 -3 -10 -30 -100 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) 2002. 7. 9 Revision No : 2 3/4 KRA110S~KRA114S h FE - I C COLLECTOR-EMITTER SATURATIN VOLTAGE VCE(sat) (V) -2 -1 -0.5 -0.3 2k DC CURRENT GAIN h FE 1k 500 300 100 50 30 KRA113S KRA113S I C /I B =20 VCE(sat) - I C Ta=100 C Ta=25 C Ta=-25 C -0.1 -0.05 -0.03 -0.01 -0.1 Ta=100 C Ta=25 C Ta=-25 C VCE =-5V 10 -0.1 -0.3 -1 -3 -10 -30 -100 -0.3 -1 -3 -10 -30 -100 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER SATURATIN VOLTAGE VCE(sat) (V) 2k DC CURRENT GAIN h FE 1k 500 300 100 50 30 KRA114S h FE - I C -2 -1 -0.5 -0.3 -0.1 -0.05 -0.03 KRA114S I C /I B =20 VCE(sat) - I C Ta=100 C Ta=25 C Ta=-25 C Ta=100 C Ta=25 C Ta=-25 C 10 -0.1 VCE =-5V -0.3 -1 -3 -10 -30 -100 -0.01 -0.1 -0.3 -1 -3 -10 -30 -100 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) 2002. 7. 9 Revision No : 2 4/4