KRA113

SEMICONDUCTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES ・With Built-in Bias Resistors. ・Simplify Circuit Design. ・Reduce a Quantity of Parts and Manufacturing Process. K D KRA110~KRA114 EPITAXIAL PLANAR PNP TRANSISTOR B C A N G E EQUIVALENT CIRCUIT C B R1 L M 1 2 3 C H F F DIM A B C D E F G H J K L M N MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 14.00 + 0.50 0.55 MAX 2.30 0.45 MAX 1.00 J 1. EMITTER 2. COLLECTOR E 3. BASE TO-92 MAXIMUM RATING (Ta=25℃) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC PC Tj Tstg RATING -50 -50 -5 -100 625 150 -55～150 UNIT V V V mA mW ℃ ℃ 2009. 2. 25 Revision No : 0 1/4 KRA110~KRA114 ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency KRA110 KRA111 Rise Time KRA112 KRA113 KRA114 KRA110 KRA111 Switching Time Storage Time KRA112 KRA113 KRA114 KRA110 KRA111 Fall Time KRA112 KRA113 KRA114 KRA110 KRA111 Input Resistor KRA112 KRA113 KRA114 Note : * Characteristic of Transistor Only. R1 tf tstg VO=-5V VIN=-5V RL=1kΩ tr SYMBOL ICBO IEBO hFE VCE(sat) fT * TEST CONDITION VCB=-50V, IE=0 VEB=-5V, IC=0 VCE=-5V, IC=-1mA IC=-10mA, IB=-0.5mA VCE=-10V, IC=-5mA MIN. 120 3.29 7 70 15.4 32.9 TYP. -0.1 250 0.2 0.065 0.4 0.1 0.15 2.0 1.7 3.0 2.0 1.5 0.3 0.3 1.7 0.8 1.5 4.7 10 100 22 47 MAX. -100 -100 -0.3 6.11 13 130 28.6 61.1 kΩ μ S V MHz UNIT nA nA 2009. 2. 25 Revision No : 0 2/4 KRA110~KRA114 h FE - I C COLLECTOR-EMITTER SATURATION VOLTAGE V CE(sat) (V) -2 -1 -0.5 -0.3 -0.1 -0.05 -0.03 -0.01 -0.1 Ta=100 C Ta=25 C Ta=-25 C 2k DC CURRENT GAIN h FE 1k 500 300 100 50 30 KRA110 KRA110 I C /IB =20 VCE(sat) - I C Ta=100 C Ta=25 C Ta=-25 C VCE =-5V 10 -0.1 -0.3 -1 -3 -10 -30 -100 -0.3 -1 -3 -10 -30 -100 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER SATURATION VOLTAGE V CE(sat) (V) 2k DC CURRENT GAIN h FE 1k 500 300 100 50 30 KRA111 h FE - I C -2 -1 -0.5 -0.3 -0.1 -0.05 -0.03 KRA111 I C /I B =20 VCE(sat) - I C Ta=100 C Ta=25 C Ta=-25 C Ta=100 C Ta=25 C Ta=-25 C VCE =-5V 10 -0.1 -0.3 -1 -3 -10 -30 -100 -0.01 -0.1 -0.3 -1 -3 -10 -30 -100 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER SATURATION VOLTAGE V CE(sat) (V) 2k DC CURRENT GAIN h FE 1k 500 300 100 50 30 KRA112 h FE - I C -2 -1 -0.5 -0.3 -0.1 -0.05 -0.03 KRA112 IC /I B =20 VCE(sat) - I C Ta=100 C Ta=25 C Ta=-25 C Ta=100 C Ta=25 C Ta=-25 C VCE =-5V 10 -0.1 -0.3 -1 -3 -10 -30 -100 -0.01 -0.1 -0.3 -1 -3 -10 -30 -100 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) 2009. 2. 25 Revision No : 0 3/4 KRA110~KRA114 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 2k DC CURRENT GAIN h FE 1k 500 300 100 50 30 KRA113 h FE - I C -2 -1 -0.5 -0.3 -0.1 -0.05 -0.03 KRA113 I C /I B =20 VCE(sat) - I C Ta=100 C Ta=25 C Ta=-25 C Ta=100 C Ta=25 C Ta=-25 C VCE =-5V 10 -0.1 -0.3 -1 -3 -10 -30 -100 -0.01 -0.1 -0.3 -1 -3 -10 -30 -100 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 2k DC CURRENT GAIN h FE 1k 500 300 100 50 30 KRA114 h FE - I C -2 -1 -0.5 -0.3 -0.1 -0.05 -0.03 KRA114 I C /I B =20 VCE(sat) - I C Ta=100 C Ta=25 C Ta=-25 C Ta=100 C Ta=25 C Ta=-25 C 10 -0.1 VCE =-5V -0.3 -1 -3 -10 -30 -100 -0.01 -0.1 -0.3 -1 -3 -10 -30 -100 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) 2009. 2. 25 Revision No : 0 4/4