KRA759E

SEMICONDUCTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES With Built-in Bias Resistors Reduce a Quantity of Parts and Manufacturing Process High Packing Density. A1 KRA757E~KRA759E EPITAXIAL PLANAR PNP TRANSISTOR B B1 Simplify Circuit Design A C 1 6 C 2 5 3 4 P P DIM A A1 B B1 C D H J P MILLIMETERS _ 1.6 + 0.05 _ 1.0 + 0.05 _ 1.6 + 0.05 _ 1.2 + 0.05 0.50 _ 0.2 + 0.05 _ 0.5 + 0.05 _ 0.12 + 0.05 5 EQUIVALENT CIRCUIT OUT R1 R2 BIAS RESISTOR VALUES TYPE NO. KRA757E R1(k 10 22 47 ) R2(k 47 47 22 1. 2. 3. 4. 5. 6. Q1 Q1 Q2 Q2 Q2 Q1 COMMON (EMITTER) IN (BASE) OUT (COLLECTOR) COMMON (EMITTER) IN (BASE) OUT (COLLECTOR) ) H IN KRA758E KRA759E COMMON(+) TES6 EQUIVALENT CIRCUIT (TOP VIEW) 6 5 4 Q1 Q2 MAXIMUM RATING (Ta=25 Output Voltage ) SYMBOL KRA757E 759E VO 1 2 J D 3 CHARACTERISTIC RATING -50 -30, 6 UNIT V KRA757E Input Voltage KRA758E KRA759E Output Current Power Dissipation Junction Temperature Storage Temperature Range * Total Rating. KRA757E 759E IO PD * Tj Tstg VI -40, 7 -40, 15 -100 200 150 -55 Type Name 6 5 4 V mA mW 150 Marking MARK SPEC TYPE MARK KRA757E PH KRA758E PI KRA759E PJ 1 2 3 2002. 1. 24 Revision No : 1 1/4 KRA757E~KRA759E ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Output Cut-off Current KRA757E 759E SYMBOL IO(OFF) TEST CONDITION VO=-50V, VI=0 MIN. 80 GI VO=-5V, IO=-10mA 80 70 VO(ON) IO=-10mA, II=-0.5mA VI(ON) VO=-0.2V, IO=-5mA -0.5 VI(OFF) VO=-5V, IO=-0.1mA -0.6 -1.5 fT * VO=-10V, IO=-5mA II VI=-5V tr VO=-5V, VIN=-5V RL=1k tf TYP. 150 150 140 -0.1 -1.2 -1.8 -3.0 -0.75 -0.88 -1.82 200 0.07 0.20 0.38 1.1 1.3 0.7 0.35 0.4 0.48 MAX. -500 -0.3 -1.8 -2.6 -5.8 -0.88 -0.36 -0.16 S mA MHz V V V UNIT nA KRA757E DC Current Gain KRA758E KRA759E Output Voltage KRA757E 759E KRA757E Input Voltage (ON) KRA758E KRA759E KRA757E Input Votlage (OFF) KRA758E KRA759E Transition Frequency KRA757E 759E KRA757E Input Current KRA758E KRA759E KRA757E Rise Time KRA758E KRA759E KRA757E Switching Time Storage Time KRA758E KRA759E KRA757E Fall Time KRA758E KRA759E Note : * Characteristic of Transistor Only. tstg 2002. 1. 24 Revision No : 1 2/4 KRA757E~KRA759E -50 OUTPUT CURRENT I O (mA) -30 KRA757E VO =-0.2V I O - V I(ON) -25 25 -3k OUTPUT CURRENT I O (µA) KRA757E I O - V I(OFF) 100 -1k C Ta=1 00 C -5 -3 -500 -300 Ta=25 C Ta=-25 C -1 -0.5 -0.3 -0.1 -100 -50 -30 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 VO =-5V Ta=10 0 Ta=2 5C Ta=-2 5C -10 -0.3 -1 -3 -10 -30 -100 -1.4 -1.6 INPUT ON VOLTAGE V I(ON) (V) INPUT OFF VOLTAGE VI(OFF) (V) -50 -30 OUTPUT CURRENT I O (mA) KRA758E VO =-0.2V I O - V I(ON) -3k OUTPUT CURRENT I O (µA) KRA758E I O - V I(OFF) -1k 0C 5C Ta=2 Ta=1 -5 -3 00 C Ta= 10 -500 -300 Ta=25 C Ta=-25 C -1 -0.5 -0.3 -0.1 -100 -50 -30 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 VO =-5V -0.3 -1 -3 Ta=- 25 C -10 -10 -30 -100 -1.4 -1.6 INPUT ON VOLTAGE V I(ON) (V) INPUT OFF VOLTAGE VI(OFF) (V) -50 -30 OUTPUT CURRENT I O (mA) KRA759E VO =-0.2V I O - V I(ON) -3k OUTPUT CURRENT I O (µA) KRA759E I O - V I(OFF) -1k 5C Ta=2 Ta =1 -5 -3 Ta=25 C Ta=-25 C -300 -1 -0.5 -0.3 -0.1 -100 -50 -30 -0.2 -0.6 -1.0 -1.4 -1.8 -2.2 -2.6 VO =-5V -0.3 -1 -3 -10 -30 -100 Ta= 00 100 C -500 Ta=25 C -10 C -3.0 -3.4 INPUT ON VOLTAGE V I(ON) (V) INPUT OFF VOLTAGE VI(OFF) (V) 2002. 1. 24 Revision No : 1 3/4 KRA757E~KRA759E 1k DC CURRENT GAIN G I 500 300 KRA757E VO =-5V G I - IO 1k Ta=100 C DC CURRENT GAIN G I 500 300 KRA758E VO =-5V G I - IO Ta=100 C Ta=25 C Ta=-25 C 100 50 Ta=25 C Ta=-25 C 100 50 30 -1 -3 -10 -30 -100 20 -1 -3 -10 -30 -100 OUTPUT CURRENT IO (mA) OUTPUT CURRENT IO (mA) G I - IO 1k DC CURRENT GAIN G I 500 300 Ta=100 C KRA759E VO =-5V 100 50 Ta=25 C Ta=-25 C 20 -1 -3 -10 -30 -100 OUTPUT CURRENT IO (mA) 2002. 1. 24 Revision No : 1 4/4