SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES
With Built-in Bias Resistors. Reduce a Quantity of Parts and Manufacturing Process. High Packing Density.
A1
KRA760E~KRA764E
EPITAXIAL PLANAR PNP TRANSISTOR
B B1
Simplify Circuit Design.
A
C
1
6 5
2
3
4
EQUIVALENT CIRCUIT
C B R1
EQUIVALENT CIRCUIT (TOP VIEW)
6 5 4
H
P P
DIM A A1 B B1 C D H J
P
MILLIMETERS _ 1.6 + 0.05 _ 1.0 + 0.05 _ 1.6 + 0.05 _ 1.2 + 0.05 0.50 _ 0.2 + 0.05 _ 0.5 + 0.05 _ 0.12 + 0.05
5
C
Q1 Q2
1. 2. 3. 4. 5. 6. Q1 Q1 Q2 Q2 Q2 Q1 EMITTER BASE COLLECTOR EMITTER BASE COLLECTOR
E
1
2
3
TES6
MAXIMUM RATING (Ta=25
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current
)
SYMBOL VCBO VCEO VEBO IC RATING -50 -50 -5 -100 UNIT V V V mA CHARACTERISTIC Collector Power Dissipation Junction Temperature Storage TemperatureRange * Total Rating. SYMBOL PC * Tj Tstg RATING 200 150 -55 150 UNIT mW
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency KRA760E KRA761E Input Resistor KRA762E KRA763E KRA764E Note : * Characteristic of Transistor Only.
)
SYMBOL ICBO IEBO hFE VCE(sat) fT * TEST CONDITION VCB=-50V, IE=0 VEB=-5V, IC=0 VCE=-5V, IC=-1mA IC=-10mA, IB=-0.5mA VCE=-10V, IC=-5mA MIN. 120 R1 TYP. -0.1 250 4.7 10 100 22 47
Type Name
5 4
J
D
MAX. -100 -100 -0.3 -
UNIT nA nA
V MHz
k
Marking
6
MARK SPEC
TYPE MARK KRA760E PK KRA761E PM KRA762E PN KRA763E PO KRA764E PP
1 2 3
2002. 7. 9
Revision No : 2
1/4
KRA760E~KRA764E
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC KRA760E KRA761E Rise Time KRA762E KRA763E KRA764E KRA760E KRA761E Switching Time Storage Time KRA762E KRA763E KRA764E KRA760E KRA761E Fall Time KRA762E KRA763E KRA764E tf tstg VO=-5V VIN=-5V RL=1k tr SYMBOL TEST CONDITION MIN. TYP. 0.2 0.065 0.4 0.1 0.15 2.0 1.7 3.0 2.0 1.5 0.3 0.3 1.7 0.8 1.5 MAX. S UNIT
2002. 7. 9
Revision No : 2
2/4
KRA760E~KRA764E
h FE - I C
COLLECTOR-EMITTER SATURATIN VOLTAGE V CE(sat) (V) -2 -1 -0.5 -0.3 -0.1 -0.05 -0.03 -0.01 -0.1
Ta=100 C Ta=25 C Ta=-25 C
2k DC CURRENT GAIN h FE 1k 500 300 100 50 30
KRA760E
KRA760E
I C /IB =20
VCE(sat) - I C
Ta=100 C Ta=25 C Ta=-25 C
VCE =-5V
10 -0.1
-0.3
-1
-3
-10
-30
-100
-0.3
-1
-3
-10
-30
-100
COLLECTOR CURRENT I C (mA)
COLLECTOR CURRENT I C (mA)
COLLECTOR-EMITTER SATURATIN VOLTAGE V CE(sat) (V)
2k DC CURRENT GAIN h FE 1k 500 300 100 50 30
KRA761E
h FE - I C
-2 -1 -0.5 -0.3 -0.1 -0.05 -0.03
KRA761E
I C /I B =20
VCE(sat) - I C
Ta=100 C Ta=25 C Ta=-25 C
Ta=100 C Ta=25 C Ta=-25 C
VCE =-5V
10 -0.1
-0.3
-1
-3
-10
-30
-100
-0.01 -0.1
-0.3
-1
-3
-10
-30
-100
COLLECTOR CURRENT I C (mA)
COLLECTOR CURRENT I C (mA)
COLLECTOR-EMITTER SATURATIN VOLTAGE V CE(sat) (V)
2k DC CURRENT GAIN h FE 1k 500 300 100 50 30
KRA762E
h FE - I C
-2 -1 -0.5 -0.3 -0.1 -0.05 -0.03
KRA762E
IC /I B =20
VCE(sat) - I C
Ta=100 C Ta=25 C Ta=-25 C
Ta=100 C Ta=25 C Ta=-25 C
VCE =-5V
10 -0.1
-0.3
-1
-3
-10
-30
-100
-0.01 -0.1
-0.3
-1
-3
-10
-30
-100
COLLECTOR CURRENT I C (mA)
COLLECTOR CURRENT I C (mA)
2002. 7. 9
Revision No : 2
3/4
KRA760E~KRA764E
COLLECTOR-EMITTER SATURATIN VOLTAGE VCE(sat) (V)
2k DC CURRENT GAIN h FE 1k 500 300 100 50 30
KRA763E
h FE - I C
-2 -1 -0.5 -0.3 -0.1 -0.05 -0.03
KRA763E
I C /I B =20
VCE(sat) - I C
Ta=100 C Ta=25 C Ta=-25 C
Ta=100 C Ta=25 C Ta=-25 C
VCE =-5V
10 -0.1
-0.3
-1
-3
-10
-30
-100
-0.01 -0.1
-0.3
-1
-3
-10
-30
-100
COLLECTOR CURRENT I C (mA)
COLLECTOR CURRENT I C (mA)
COLLECTOR-EMITTER SATURATIN VOLTAGE VCE(sat) (V)
2k DC CURRENT GAIN h FE 1k 500 300 100 50 30
KRA764E
h FE - I C
-2 -1 -0.5 -0.3 -0.1 -0.05 -0.03
KRA764E
I C /I B =20
VCE(sat) - I C
Ta=100 C Ta=25 C Ta=-25 C
Ta=100 C Ta=25 C Ta=-25 C
10 -0.1
VCE =-5V
-0.3
-1
-3
-10
-30
-100
-0.01 -0.1
-0.3
-1
-3
-10
-30
-100
COLLECTOR CURRENT I C (mA)
COLLECTOR CURRENT I C (mA)
2002. 7. 9
Revision No : 2
4/4
很抱歉,暂时无法提供与“KRA760E”相匹配的价格&库存,您可以联系我们找货
免费人工找货