KRC231S_02

SEMICONDUCT OR TECHNICAL DATA SWITCHING APPLICATION. AUDIO MUTING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES ・With Built-in Bias Resistors. ・Simplify Circuit Design. ・Reduce a Quantity of Parts and Manufacturing Process. A G KRC231S~KRC235S EPITAXIAL PLANAR NPN TRANSISTOR L E B L 2 3 1 P P EQUIVALENT CIRCUIT C R1 DIM A B C D E G H J K L M N P MILLIMETERS _ 2.93 + 0.20 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 C N H M 1. EMITTER 2. BASE 3. COLLECTOR B E K SOT-23 MAXIMUM RATING (Ta=25℃) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC PC Tj Tstg RATING 30 15 5 600 200 150 -55～150 UNIT V V V mA mW ℃ ℃ MARK SPEC TYPE MARK KRC231S NW KRC232S NY KRC233S NZ KRC234S NNA KRC235S NNB Marking Type Name Lot No. Type Name Lot No. 2002. 5. 14 Revision No : 3 J D 1/3 KRC231S~KRC235S ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Collector-Emitter Saturation Voltage DC Current Gain KRC231S KRC232S Input Resistor KRC233S KRC234S KRC235S Transition Frequency On Resistance Note : * Characteristic of Transistor Only. SYMBOL BVCEO BVCBO BVEBO ICBO VCE(sat) hFE TEST CONDITION IC=1mA IC=50μ A IE=50μ A VCB=30V IC=50mA, IB=2.5mA VCE=5V, IC=50mA MIN. 15 30 5.0 200 - TYP. 40 350 2.2 5.6 10 4.7 6.8 200 0.6 MAX. 0.5 80 800 - UNIT V V V μ A mV kΩ R1 VCE=10V, IE=-50mA, f=100MHz f=1kHz, IB=1mA, VIN=0.3V fT* Ron - MHz Ω 2002. 5. 14 Revision No : 3 2/3 KRC231S~KRC235S h FE - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (mV) 2k 1k DC CURRENT GAIN h FE 300 100 30 10 3 1 0.1 0.3 1 3 10 30 100 300 1k COLLECTOR CURRENT I C (mA) COMMON EMITTER VCE =5V Ta=25 C VCE(sat) - I C 500 300 100 50 30 10 5 3 1 1 3 10 30 100 300 1k COLLECTOR CURRENT I C (mA) COMMON EMITTER VCE =5V Ta=25 C I C /I B =20 I C /I B =10 R on - I B 1k ON RESISTANCE R on (Ω) 300 100 30 10 3 1 0.3 0.1 0.01 0.03 0.1 0.3 1 3 10 30 100 f=1kHz VIN =0.3V Vh v Vh I B=1mA ~ BASE CURRENT I B (mA) 2002. 5. 14 Revision No : 3 3/3