KRC659E

SEMICONDUCTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. KRC657E~KRC659E EPITAXIAL PLANAR NPN TRANSISTOR B FEATURES With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process. High Packing Density. A1 A 1 B1 5 DIM A A1 B 2 3 4 B1 C D H J P MILLIMETERS _ 1.6 + 0.05 _ 1.0 + 0.05 _ 1.6 + 0.05 _ 1.2+ 0.05 0.50 _ 0.2 + 0.05 _ 0.5 + 0.05 _ 0.12 + 0.05 5 C C EQUIVALENT CIRCUIT OUT R1 R2 BIAS RESISTOR VALUES TYPE NO. KRC657E KRC658E KRC659E R1(k 10 22 47 ) R2(k 47 47 22 ) H P P IN 1. Q 1 IN (BASE) 2. Q 1, Q 2 COMMON (EMITTER) 3. Q 2 IN (BASE) 4. Q 2 OUT (COLLECTOR) 5. Q 1 OUT (COLLECTOR) COMMON TESV EQUIVALENT CIRCUIT (TOP VIEW) 5 4 Q1 J D Q2 1 2 3 MAXIMUM RATING (Ta=25 Output Voltage ) SYMBOL KRC657E 659E KRC657E VO RATING 50 30, -6 VI 40, -7 40,-15 IO KRC657E 659E PD * Tj Tstg 100 200 150 -55 150 mA mW V UNIT V CHARACTERISTIC Input Voltage KRC658E KRC659E Output Current Power Dissipation Junction Temperature Storage Temperature Range * Total Rating. Marking 5 4 Type Name MARK SPEC TYPE MARK KRC657E NH KRC658E NI KRC659E NJ 1 2 3 2002. 1. 24 Revision No : 1 1/4 KRC657E~KRC659E ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Output Cut-off Current KRC657E 659E SYMBOL IO(OFF) TEST CONDITION VO=50V, VI=0 MIN. 80 GI VO=5V, IO=10mA 80 70 VO(ON) IO=10mA, II=0.5mA VI(ON) VO=0.2V, IO=5mA 0.5 VI(OFF) VO=5V, IO=0.1mA 0.6 1.5 fT * VO=10V, IO=5mA II VI=5V tr VO=5V, VIN=5V RL=1k tf TYP. 150 150 140 0.1 1.2 1.8 3.0 0.75 0.88 1.82 200 0.05 0.12 0.26 2.0 2.4 1.5 0.36 0.4 0.41 MAX. 500 0.3 1.8 2.6 5.8 0.88 0.36 0.16 S mA MHz V V V UNIT nA KRC657E DC Current Gain KRC658E KRC659E Output Voltage KRC657E 659E KRC657E Input Voltage (ON) KRC658E KRC659E KRC657E Input Votlage (OFF) KRC658E KRC659E Transition Frequency KRC657E 659E KRC657E Input Current KRC658E KRC659E KRC657E Rise Time KRC658E KRC659E KRC657E Switching Time Storage Time KRC658E KRC659E KRC657E Fall Time KRC658E KRC659E tstg Note : * Characteristic of Transistor Only. 2002. 1. 24 Revision No : 1 2/4 KRC657E~KRC659E 50 OUTPUT CURRENT I O (mA) 30 KRC657E VO =0.2V I O - V I(ON) -25 25 3k OUTPUT CURRENT I O (µA) KRC657E I O - V I(OFF) 100 1k C Ta=1 00 C 5 3 500 300 Ta=25 C Ta=-25 C 1 0.5 0.3 0.1 0.3 1 3 10 30 100 INPUT ON VOLTAGE V I(ON) (V) 100 50 30 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 INPUT OFF VOLTAGE V I(OFF) (V) VO =5V Ta=10 0 50 30 OUTPUT CURRENT I O (mA) KRC658E VO =0.2V I O - V I(ON) 3k OUTPUT CURRENT I O (µA) KRC658E I O - V I(OFF) 1k 0C 5C Ta=2 Ta=1 5 3 00 C Ta= 10 500 300 Ta=25 C Ta=-25 C 1 0.5 0.3 0.1 0.3 1 3 10 30 100 INPUT ON VOLTAGE V I(ON) (V) 100 50 30 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 INPUT OFF VOLTAGE V I(OFF) (V) VO =5V 50 30 OUTPUT CURRENT I O (mA) KRC659E VO =0.2V I O - V I(ON) 3k OUTPUT CURRENT I O (µA) KRC659E I O - V I(OFF) 1k 5C Ta=2 Ta =1 5 3 Ta=25 C Ta=-25 C 300 1 0.5 0.3 0.1 0.3 1 3 10 30 100 INPUT ON VOLTAGE V I(ON) (V) 100 50 30 0.2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 INPUT OFF VOLTAGE V I(OFF) (V) VO =5V 2002. 1. 24 Revision No : 1 Ta= 00 100 C 500 Ta=25 C 10 C Ta=- 25 C 10 Ta=2 5C Ta=-2 5C 10 3/4 KRC657E~KRC659E 1k DC CURRENT GAIN G I 500 300 KRC657E VO =5V G I - IO 1k Ta=100 C DC CURRENT GAIN G I 500 300 KRC658E VO =5V G I - IO Ta=100 C Ta=25 C Ta=-25 C 100 50 Ta=25 C Ta=-25 C 100 50 30 1 3 10 30 100 OUTPUT CURRENT IO (mA) 20 1 3 10 30 100 OUTPUT CURRENT IO (mA) G I - IO 1k DC CURRENT GAIN G I 500 300 Ta=100 C KRC659E VO =5V 100 50 Ta=25 C Ta=-25 C 20 1 3 10 30 100 OUTPUT CURRENT IO (mA) 2002. 1. 24 Revision No : 1 4/4