KRC822E

KRC822E

  • 厂商:

    KEC

  • 封装:

  • 描述:

    KRC822E - EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT) - KEC(Ko...

  • 详情介绍
  • 数据手册
  • 价格&库存
KRC822E 数据手册
SEMICONDUCTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES With Built-in Bias Resistors. Reduce a Quantity of Parts and Manufacturing Process. High Packing Density. A1 KRC821E~KRC826E EPITAXIAL PLANAR NPN TRANSISTOR B B1 Simplify Circuit Design. A C 1 6 C 2 5 3 4 P P DIM A A1 B B1 C D H J P MILLIMETERS _ 1.6 + 0.05 _ 1.0 + 0.05 _ 1.6 + 0.05 _ 1.2 + 0.05 0.50 _ 0.2 + 0.05 _ 0.5 + 0.05 _ 0.12 + 0.05 5 EQUIVALENT CIRCUIT OUT R1 R2 BIAS RESISTOR VALUES TYPE NO. KRC821E 4.7 10 22 47 2.2 4.7 4.7 10 22 47 47 47 1. 2. 3. 4. 5. 6. Q1 Q2 Q2 Q2 Q1 Q1 COMMON (EMITTER) COMMON (EMITTER) IN (BASE) OUT (COLLECTOR) IN (BASE) OUT (COLLECTOR) J R1(k ) R2(k ) IN KRC822E KRC823E KRC824E COMMON KRC825E KRC826E H TES6 EQUIVALENT CIRCUIT (TOP VIEW) 6 5 4 Q1 D Q2 MAXIMUM RATING (Ta=25 Output Voltage ) SYMBOL KRC821E 826E VO KRC821E KRC822E KRC823E KRC824E KRC825E KRC826E 1 2 3 CHARACTERISTIC RATING 50 20, -10 30, -10 40, -10 40, -10 12, -5 20, -5 UNIT V Input Voltage VI V Output Current Power Dissipation Junction Temperature Storage Temperature Range * Total Rating. KRC821E 826E IO PD* Tj Tstg 100 200 150 -55 150 mA mW Marking 6 5 4 Type Name MARK SPEC TYPE MARK KRC821E YA KRC822E YB KRC823E YC KRC824E YD KRC825E YE KRC826E YF 1 2 3 2002. 1. 24 Revision No : 1 1/6 KRC821E~KRC826E ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Output Cut-off Current KRC821E 826E KRC821E KRC822E KRC823E DC Current Gain KRC824E KRC825E KRC826E Output Voltage KRC821E 826E KRC821E KRC822E Input Voltage (ON) KRC823E KRC824E KRC825E KRC826E Input Votlage (OFF) Transition Frequency KRC821E 824E KRC825E 826E KRC821E 826E KRC821E KRC822E Input Current KRC823E KRC824E KRC825E KRC826E II VI=5V VI(OFF) fT * VO=5V, IO=0.1mA VO=10V, IO=5mA VI(ON) VO=0.2V, IO=5mA VO(ON) IO=10mA, II=0.5mA GI VO=5V, IO=10mA SYMBOL IO(OFF) TEST CONDITION VO=50V, VI=0 MIN. 30 50 70 80 80 80 1.0 0.5 TYP. 55 80 120 200 200 200 0.1 1.5 1.8 2.1 2.8 0.8 0.9 1.2 0.65 200 MAX. 500 0.3 2.0 2.4 3.0 5.0 1.1 1.3 1.8 0.88 0.36 0.18 3.6 1.8 mA V MHz V V UNIT nA Note : * Characteristic of Transistor Only. 2002. 1. 24 Revision No : 1 2/6 KRC821E~KRC826E ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC KRC821E KRC822E KRC823E Rise Time KRC824E KRC825E KRC826E KRC821E KRC822E Switching Time Storage Time KRC823E KRC824E KRC825E KRC826E KRC821E KRC822E Fall Time KRC823E KRC824E KRC825E KRC826E tf tstg VO=5V VIN=5V RL=1k tr SYMBOL TEST CONDITION MIN. TYP. 0.03 0.05 0.12 0.22 0.01 0.03 2.0 2.0 2.0 2.0 2.0 2.0 0.12 0.36 0.35 0.6 0.1 0.19 MAX. S UNIT 2002. 1. 24 Revision No : 1 3/6 KRC821E~KRC826E I O - V I(ON) 100 OUTPUT CURRENT I O (mA) 50 30 10 Ta=1 00 KRC821E OUTPUT CURRENT I O (mA) VO =0.2V 25 -25 100 100 50 30 10 5 3 1 0.5 0.3 KRC822E VO =0.2V I O - V I(ON) 1 0.5 0.3 0.1 0.3 1 3 10 30 100 INPUT ON VOLTAGE VI(ON) (V) 0.1 Ta=1 5 3 00 C Ta=25 C Ta=-25 C C Ta=25 C Ta=-25 C 0.3 1 3 10 30 100 INPUT ON VOLTAGE V I(ON) (V) I O - V I(ON) 100 OUTPUT CURRENT I O (mA) 50 30 10 100 C I O - V I(ON) K OUTPUT CURRENT I O (mA) 100 50 30 10 5 3 1 0.5 0.3 0.1 0.3 1 3 10 30 100 INPUT ON VOLTAGE V I(ON) (V) C Ta=25 C Ta=-25 C KRC823E VO =0.2V RC824E VO =0.2V Ta= 1 0.5 0.3 0.1 0.3 1 3 10 30 100 INPUT ON VOLTAGE VI(ON) (V) 100 OUTPUT CURRENT I O (mA) 50 30 10 KRC825E VO =0.2V I O - V I(ON) K OUTPUT CURRENT I O (mA) 100 50 30 10 5 3 1 0.5 0.3 0.1 RC826E VO =0.2V I O - V I(ON) 00 C 1 0.5 0.3 0.1 0.3 1 3 10 30 100 INPUT ON VOLTAGE VI(ON) (V) Ta=1 5 3 Ta=25 C Ta=-25 C Ta=1 00 C 0.3 1 Ta Ta=25 C Ta=-25 C 5 3 Ta=25 C Ta=-25 C =1 00 3 10 30 100 INPUT ON VOLTAGE V I(ON) (V) 2002. 1. 24 Revision No : 1 4/6 KRC821E~KRC826E 10k OUTPUT CURRENT I O (µA) 5k 3k 1k KRC821E I O - V I(OFF) VO =5V 10k OUTPUT CURRENT I O (µA) 5k 3k 1k KRC822E I O - V I(OFF) VO =5V C Ta= 100 C Ta= 25 C 0C Ta= 10 Ta= 100 50 30 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 INPUT OFF VOLTAGE V I(OFF) (V) T a= 100 50 30 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 INPUT OFF VOLTAGE V I(OFF) (V) I O - V I(OFF) 10k OUTPUT CURRENT I O (µA) 5k 3k 1k Ta= 25 C I O - V I(OFF) VO =5V KRC823E OUTPUT CURRENT I O (µA) 10k 5k 3k 1k KRC824E VO =5V Ta =1 0 Ta= Ta= 100 50 30 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 100 50 30 0.8 1.0 1.2 1.4 1.6 1.8 2.0 INPUT OFF VOLTAGE V I(OFF) (V) INPUT OFF VOLTAGE V I(OFF) (V) I O - V I(OFF) 10k OUTPUT CURRENT I O (µA) 5k 3k 1k Ta=25 C Ta=-2 5C 0C Ta=1 0 I O - V I(OFF) VO =5V KRC825E OUTPUT CURRENT I O (µA) 10k 5k 3k 1k KRC826E VO =5V 100 50 30 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 100 50 30 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 INPUT OFF VOLTAGE V I(OFF) (V) INPUT OFF VOLTAGE V I(OFF) (V) 2002. 1. 24 Revision No : 1 Ta=1 500 300 500 300 Ta=25 C Ta=-2 5C 00 C Ta 500 300 C C C C T a= =25 C 500 300 C 500 300 25 -25 500 300 -25 0 Ta =2 100 5 -25 C 5/6 KRC821E~KRC826E GI - IO 300 KRC821E VO =5V Ta=100 C GI - IO 300 KRC822E VO =5V Ta=100 C DC CURRENT GAIN G I 100 50 30 DC CURRENT GAIN G I 100 50 30 Ta=25 C Ta=-25 C Ta=25 C Ta=-25 C 10 5 0.5 1 3 10 30 100 10 5 0.5 1 3 10 30 100 OUTPUT CURRENT I O (mA) OUTPUT CURRENT I O (mA) 300 DC CURRENT GAIN G I KRC823E GI - IO 300 Ta=100 C KRC824E GI - IO 100 50 30 Ta=25 C Ta=-25 C DC CURRENT GAIN G I Ta=100 C 100 50 30 Ta=25 C Ta=-25 C 10 VO =5V 10 5 0.5 VO =5V 5 0.5 1 3 10 30 100 1 3 10 30 100 OUTPUT CURRENT I O (mA) OUTPUT CURRENT I O (mA) 300 DC CURRENT GAIN G I KRC825E GI - IO 300 Ta=100 C KRC826E Ta=100 C GI - IO DC CURRENT GAIN G I 100 50 30 Ta=25 C Ta=-25 C 100 50 30 Ta=25 C Ta=-25 C 10 5 0.5 VO =5V 10 5 0.5 VO =5V 1 3 10 30 100 1 3 10 30 100 OUTPUT CURRENT I O (mA) OUTPUT CURRENT I O (mA) 2002. 1. 24 Revision No : 1 6/6
KRC822E
物料型号: - KRC821E~KRC826E

器件简介: - 这些是PI TAXIAL PLANAR NPN TRANSISTOR,用于开关应用、接口电路和驱动电路应用。

引脚分配: - 1. Q COMMON (EMITTER) - 2. Q COMMON (EMITTER) - 3. Q2 NTC SLECTOR - 4. Q IN (BASE) - 5. Q OUT (COLLECTOR)

参数特性: - 内置偏置电阻,简化电路设计,减少零件数量和制造过程,高封装密度。 - 偏置电阻值如下: - KRC821E: R1=4.7kΩ, R2=4.7kΩ - KRC822E: R1=10kΩ, R2=10kΩ - KRC823E: R1=22kΩ, R2=22kΩ - KRC824E: R1=47kΩ, R2=47kΩ - KRC825E: R1=2.2kΩ, R2=47kΩ - KRC826E: R1=4.7kΩ, R2=47kΩ

功能详解: - 这些晶体管具有内置偏置电阻,可以简化电路设计,减少零件数量和制造过程,具有高封装密度。

应用信息: - 开关应用、接口电路和驱动电路应用。

封装信息: - 封装尺寸参数如下: - A: 1.6±0.05 mm - AI: 1.0+0.05 mm - B: 1.6+0.05 mm - B1: 1.2+0.05 mm - C: 0.50 mm - D: 0.2+0.05 mm - H: 0.5+0.05 mm - J: 0.12+0.05 mm - P: 5"
KRC822E 价格&库存

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