KRC857U

KRC857U

  • 厂商:

    KEC

  • 封装:

  • 描述:

    KRC857U - EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT) - KEC(Ko...

  • 详情介绍
  • 数据手册
  • 价格&库存
KRC857U 数据手册
SEMICONDUCTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES With Built-in Bias Resistors. A1 KRC857U~KRC859U EPITAXIAL PLANAR NPN TRANSISTOR B B1 1 6 5 4 D Reduce a Quantity of Parts and Manufacturing Process. High Packing Density. A Simplify Circuit Design. 2 DIM A A1 B B1 C D G H 3 MILLIMETERS _ 2.00 + 0.20 _ 1.3 + 0.1 _ 2.1 + 0.1 _ 1.25 + 0.1 0.65 0.2+0.10/-0.05 0-0.1 _ 0.9 + 0.1 0.15+0.1/-0.05 H C C EQUIVALENT CIRCUIT OUT R1 R2 BIAS RESISTOR VALUES TYPE NO. KRC857U R1(k 10 22 47 ) R2(k 47 47 22 ) 1. 2. 3. 4. 5. 6. Q1 Q1 Q2 Q2 Q2 Q1 G T T IN KRC858U KRC859U COMMON (EMITTER) IN (BASE) OUT (COLLECTOR) COMMON (EMITTER) IN (BASE) OUT (COLLECTOR) COMMON US6 EQUIVALENT CIRCUIT (TOP VIEW) 6 5 4 Q1 Q2 MAXIMUM RATING (Ta=25 Output Voltage ) SYMBOL 859U VO KRC857U 1 2 3 CHARACTERISTIC RATING 50 30, -6 UNIT V KRC857U Input Voltage KRC858U KRC859U Output Current Power Dissipation Junction Temperature Storage Temperature Range * Total Rating. KRC857U 859U IO PD * Tj Tstg VI 40, -7 40,-15 100 200 150 -55 150 V mA mW Marking MARK SPEC TYPE MARK KRC857U NH KRC858U NI KRC859U NJ 1 2 3 6 5 4 Type Name 2002. 1. 24 Revision No : 2 1/4 KRC857U~KRC859U ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Output Cut-off Current KRC857U 859U SYMBOL IO(OFF) TEST CONDITION VO=50V, VI=0 MIN. 80 GI VO=5V, IO=10mA 80 70 VO(ON) IO=10mA, II=0.5mA VI(ON) VO=0.2V, IO=5mA 0.5 VI(OFF) VO=5V, IO=0.1mA 0.6 1.5 fT * VO=10V, IO=5mA II VI=5V tr VO=5V, VIN=5V RL=1k tf TYP. 150 150 140 0.1 1.2 1.8 3.0 0.75 0.88 1.82 200 0.05 0.12 0.26 2.0 2.4 1.5 0.36 0.4 0.41 MAX. 500 0.3 1.8 2.6 5.8 0.88 0.36 0.16 S mA MHz V V V UNIT nA KRC857U DC Current Gain KRC858U KRC859U Output Voltage KRC857U 859U KRC857U Input Voltage (ON) KRC858U KRC859U KRC857U Input Votlage (OFF) KRC858U KRC859U Transition Frequency KRC857U 859U KRC857U Input Current KRC858U KRC859U KRC857U Rise Time KRC858U KRC859U KRC857U Switching Time Storage Time KRC858U KRC859U KRC857U Fall Time KRC858U KRC859U tstg Note : * Characteristic of Transistor Only. 2002. 1. 24 Revision No : 2 2/4 KRC857U~KRC859U 50 OUTPUT CURRENT I O (mA) 30 KRC857U VO =0.2V I O - V I(ON) -25 25 3k OUTPUT CURRENT I O (µA) KRC857U I O - V I(OFF) 100 1k C Ta=1 00 C 5 3 500 300 Ta=25 C Ta=-25 C 1 0.5 0.3 0.1 0.3 1 3 10 30 100 INPUT ON VOLTAGE V I(ON) (V) 100 50 30 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 INPUT ON VOLTAGE V I(OFF) (V) VO =5V Ta=10 0 50 30 OUTPUT CURRENT I O (mA) KRC858U VO =0.2V I O - V I(ON) 3k OUTPUT CURRENT I O (µA) KRC858U I O - V I(OFF) 1k 0C 5C Ta=2 Ta=1 5 3 00 C Ta= 10 500 300 Ta=25 C Ta=-25 C 1 0.5 0.3 0.1 0.3 1 3 10 30 100 INPUT ON VOLTAGE V I(ON) (V) 100 50 30 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 INPUT ON VOLTAGE V I(OFF) (V) VO =5V 50 30 OUTPUT CURRENT I O (mA) KRC859U VO =0.2V I O - V I(ON) 3k OUTPUT CURRENT I O (µA) KRC859U I O - V I(OFF) 1k 5C Ta=2 Ta =1 5 3 Ta=25 C Ta=-25 C 300 1 0.5 0.3 0.1 0.3 1 3 10 30 100 INPUT ON VOLTAGE V I(ON) (V) 100 50 30 0.2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 INPUT ON VOLTAGE V I(OFF) (V) VO =5V 2002. 1. 24 Revision No : 2 Ta= 00 100 C 500 Ta=25 C 10 C Ta=- 25 C 10 Ta=2 5C Ta=-2 5C 10 3/4 KRC857U~KRC859U 1k DC CURRENT GAIN G I 500 300 KRC857U VO =5V G I - IO 1k Ta=100 C DC CURRENT GAIN G I 500 300 KRC858U VO =5V G I - IO Ta=100 C Ta=25 C Ta=-25 C 100 50 Ta=25 C Ta=-25 C 100 50 30 1 3 10 30 100 OUTPUT CURRENT IO (mA) 20 1 3 10 30 100 OUTPUT CURRENT IO (mA) G I - IO 1k DC CURRENT GAIN G I 500 300 Ta=100 C KRC859U VO =5V 100 50 Ta=25 C Ta=-25 C 20 1 3 10 30 100 OUTPUT CURRENT IO (mA) 2002. 1. 24 Revision No : 2 4/4
KRC857U
物料型号: - KRC857U、KRC858U、KRC859U

器件简介: - 这些型号是华强PCB生产的开关应用中的双极型晶体管(NPN型),适用于开关电路和驱动电路应用。它们内置有偏置电阻,可以简化电路设计,减少零件数量和制造过程,具有高封装密度。

引脚分配: - 1. 引脚1:集电极(Collector) - 2. 引脚3:发射极(Emitter) - 3. 引脚4:发射极(Emitter) - 4. 引脚6:输出(Collector)

参数特性: - 输出电压(VO):KRC857U/KRC859U为50V,KRC858U为40V。 - 输入电压(VI):KRC857U为30V,KRC858U为40V,KRC859U为40V。 - 输出电流(IO):100mA。 - 功耗(PD):200mW。 - 工作温度(Tj):150℃。 - 存储温度范围(Tstg):-55℃至150℃。

功能详解: - 这些晶体管具有内置偏置电阻,有助于简化电路设计。它们能够在开关和驱动电路中使用,具有较高的封装密度和较小的尺寸。

应用信息: - 适用于开关应用、接口电路和驱动电路。

封装信息: - 具体的封装尺寸在PDF中没有详细说明,但通常这类晶体管会采用SOT-23或其他小型封装形式。
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