KRC860U

SEMICONDUCTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES With Built-in Bias Resistors. Simplify Circuit Design. A1 KRC860U~KRC864U EPITAXIAL PLANAR NPN TRANSISTOR B B1 1 6 5 4 D Reduce a Quantity of Parts and Manufacturing Process. High Packing Density. 2 3 DIM A A1 B B1 C D G H MILLIMETERS _ 2.00 + 0.20 _ 1.3 + 0.1 _ 2.1 + 0.1 _ 1.25 + 0.1 0.65 0.2+0.10/-0.05 0-0.1 _ 0.9 + 0.1 0.15+0.1/-0.05 A EQUIVALENT CIRCUIT C B R1 EQUIVALENT CIRCUIT (TOP VIEW) H C C 6 5 4 T G T Q1 Q2 E 1. 2. 3. 4. 5. 6. Q1 Q1 Q2 Q2 Q2 Q1 EMITTER BASE COLLECTOR EMITTER BASE COLLECTOR 1 2 3 US6 MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current ) SYMBOL VCBO VCEO VEBO IC RATING 50 50 5 100 UNIT V V V mA CHARACTERISTIC Collector Power Dissipation Junction Temperature Storage Temperature Range * Total Rating. SYMBOL PC * Tj Tstg RATING 200 150 -55 150 UNIT mW ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency KRC860U KRC861U Input Resistor KRC862U KRC863U KRC864U ) SYMBOL ICBO IEBO hFE VCE(sat) fT * TEST CONDITION VCB=50V, IE=0 VEB=5V, IC=0 VCE=5V, IC=1mA IC=10mA, IB=0.5mA VCE=10V, IC=5mA MIN. 120 R1 TYP. 0.1 250 4.7 10 100 22 47 Type Name 6 5 4 MAX. 100 100 0.3 - UNIT nA nA V MHz k Note : * Characteristic of Transistor Only. MARK SPEC TYPE MARK KRC860U NK KRC861U NM KRC862U NN KRC863U NO KRC864U NP Marking 1 2 3 2002. 7. 10 Revision No : 3 1/4 KRC860U~KRC864U ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC KRC860U KRC861U Rise Time KRC862U KRC863U KRC864U KRC860U KRC861U Switching Time Storage Time KRC862U KRC863U KRC864U KRC860U KRC861U Fall Time KRC862U KRC863U KRC864U tf tstg VO=5V VIN=5V RL=1k tr SYMBOL TEST CONDITION MIN. TYP. 0.025 0.03 0.3 0.06 0.11 3.0 2.0 6.0 4.0 5.0 0.2 0.12 2.0 0.9 1.4 MAX. S UNIT 2002. 7. 10 Revision No : 3 2/4 KRC860U~KRC864U h FE - I C COLLECTOR-EMITTER SATURATIN VOLTAGE VCE(sat) (V) 2k DC CURRENT GAIN h FE 1k 500 300 100 50 30 VCE =5V Ta=100 C Ta=25 C Ta=-25 C KRC860U V CE(sat) - I C 2 1 0.5 0.3 KRC860U IC /I B =20 0.1 0.05 0.03 0.01 0.1 Ta=100 C Ta=25 C Ta=-25 C 10 0.1 0.3 1 3 10 30 100 0.3 1 3 10 30 100 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) h FE - I C COLLECTOR-EMITTER SATURATIN VOLTAGE VCE(sat) (V) 2k DC CURRENT GAIN h FE 1k 500 300 100 50 30 V CE =5V Ta=100 C Ta=25 C Ta=-25 C KRC861U VCE(sat) - I C 2 1 0.5 0.3 0.1 0.05 0.03 0.01 0.1 Ta=100 C Ta=25 C Ta=-25 C KRC861U IC /I B =20 10 0.1 0.3 1 3 10 30 100 0.3 1 3 10 30 100 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) h FE - I C COLLECTOR-EMITTER SATURATIN VOLTAGE VCE(sat) (V) 2k 1k DC CURRENT GAIN h FE 500 300 100 50 30 V CE =5V Ta=100 C Ta=25 C Ta=-25 C KRC862U VCE(sat) - I C 2 1 0.5 0.3 0.1 0.05 0.03 0.01 Ta=100 C Ta=25 C Ta=-25 C KRC862U I C /I B =20 10 0.1 0.3 1 3 10 30 100 0.1 0.3 1 3 10 30 100 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) 2002. 7. 10 Revision No : 3 3/4 KRC860U~KRC864U h FE - I C COLLECTOR-EMITTER SATURATIN VOLTAGE VCE(sat) (V) 2k DC CURRENT GAIN h FE 1k 500 300 100 50 30 V CE =5V Ta=100 C Ta=25 C Ta=-25 C KRC863U VCE(sat) - I C 2 1 0.5 0.3 0.1 0.05 0.03 0.01 KRC863U I C /I B =20 Ta=100 C Ta=25 C Ta=-25 C 10 0.1 0.3 1 3 10 30 100 0.1 0.3 1 3 10 30 100 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) h FE - I C COLLECTOR-EMITTER SATURATIN VOLTAGE VCE(sat) (V) 2k DC CURRENT GAIN h FE 1k 500 300 100 50 30 10 VCE =5V Ta=100 C Ta=25 C Ta=-25 C KRC864U V CE(sat) - I C 2 1 0.5 0.3 0.1 0.05 0.03 0.01 0.1 0.3 1 3 10 30 100 Ta=100 C Ta=25 C Ta=-25 C KRC864U I C /I B =20 0.1 0.3 1 3 10 30 100 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) 2002. 7. 10 Revision No : 3 4/4