KRX104E

SEMICONDUCTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. KRX104E EPITAXIAL PLANAR NPN/PNP TRANSISTOR B FEATURES Including two devices in TESV. With Built-in bias resistors. Simplify circuit design. Reduce a quantity of parts and manufacturing process. A1 A C B1 (Thin Extreme Super mini type with 5 pin.) 1 5 DIM A A1 B 2 3 4 B1 C D H J P MILLIMETERS _ 1.6 + 0.05 _ 1.0 + 0.05 _ 1.6 + 0.05 _ 1.2+ 0.05 0.50 _ 0.2 + 0.05 _ 0.5 + 0.05 _ 0.12 + 0.05 5 C EQUIVALENT CIRCUIT Q1 R1 OUT Q2 R1 OUT Q1 R1=47KΩ R2=47KΩ Q2 R2 COMMON R2 COMMON R1=4.7KΩ R2=10KΩ 1. Q 1 2. Q 1 3. Q 2 4. Q 2 5. Q 1 Q2 H P P IN IN COMMON (EMITTER) IN (BASE) COMMON (EMITTER) OUT (COLLECTOR) OUT (COLLECTOR) IN (BASE) TESV EQUIVALENT CIRCUIT (TOP VIEW) 5 4 Marking 5 J D Type Name 4 Q1 Q2 BN 1 2 3 1 2 3 Q1 MAXIMUM RATING (Ta=25 CHARACTERISTIC Output Voltage Input Voltage Output Current ) SYMBOL VO VI IO RATING 50 40, -10 100 UNIT V V Q2 MAXIMUM RATING (Ta=25 CHARACTERISTIC Output Voltage Input Voltage Output Current ) SYMBOL VO VI IO RATING -50 -20, 7 -100 UNIT V V Q1, Q2 MAXIMUM RATING (Ta=25 CHARACTERISTIC Power Dissipation Junction Temperature Storage Temperature Range * Total Raing. ) SYMBOL PD * Tj Tstg RATING 200 150 -55 150 UNIT 2002. 1. 24 Revision No : 1 1/3 KRX104E Q1 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Output Cut-off Current DC Current Gain Output Voltage Input Voltage (ON) Input Voltage (OFF) Transition Frequency Input Current SYMBOL IO(OFF) GI VO(ON) VI(ON) VI(OFF) fT * II ) TEST CONDITION VO=50V, VI=0 VO=5V, IO=10 IO=10 , II=0.5 VO=0.2V, IO=5 VO=5V, IO=0.1 VO=10V, IO=5 VI=5V MIN. 80 1.0 TYP. 200 0.1 2.8 1.2 200 MAX. 500 0.3 5.0 0.18 V V V UNIT. Note : * Characteristic of Transistor Only. Q2 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Output Cut-off Current DC Current Gain Output Voltage Input Voltage (ON) Input Voltage (OFF) Transition Frequency Input Current SYMBOL IO(OFF) GI VO(ON) VI(ON) VI(OFF) fT * II ) TEST CONDITION VO=-50V, VI=0 VO=-5V, IO=-10 IO=-10 , II=-0.5 VO=-0.3V, IO=-20 VO=-5V, IO=-0.1 VO=-10V, IO=-5 VI=-5V MIN. 30 -0.3 TYP. -0.1 -1.76 -0.82 250 MAX. -500 -0.3 -2.5 -1.8 V V V UNIT. Note : * Characteristic of Transistor Only. 2002. 1. 24 Revision No : 1 2/3 KRX104E I O - V I(ON) 100 OUTPUT CURRENT I O (mA) 50 30 10 5 3 1 0.5 0.3 0.1 0.3 1 3 10 30 100 INPUT ON VOLTAGE V I(ON) (V) C Ta=25 C Ta=-25 C Q1 VO =0.2V -100 OUTPUT CURRENT I O (mA) -50 -30 -10 -5 -3 -1 Q2 VO =-0.2V I O - V I(ON) =1 0 0 Ta=25 C C Ta=100 Ta=-25 C Ta -0.5 -0.3 -0.1 -0.3 -1 -3 -10 INPUT ON VOLTAGE V I(ON) (V) 10k OUTPUT CURRENT IO (µA) 5k 3k 1k Q1 I O - V I(OFF) VO =5V -10K OUTPUT CURRENT IO (µA) -5K -3K -1K -500 -300 -100 Q2 VO =-5V I O - V I(OFF) 100 50 30 0.8 1.0 1.2 1.4 1.6 1.8 2.0 INPUT OFF VOLTAGE VI(OFF) (V) -50 -30 -0.2 Ta= Ta Ta 500 300 Ta= 25 C Ta= -25 C C =2 5 00 C =1 Ta =- 100 25 C C -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 INPUT OFF VOLTAGE VI(OFF) (V) 300 DC CURRENT GAIN G I Q1 G I - IO 300 DC CURRENT GAIN G I Ta=100 C Q2 G I - IO Ta=100 C 100 50 30 Ta=25 C Ta=-25 C 100 50 30 Ta=25 C Ta=-25 C 10 5 0.5 1 3 10 OUTPUT CURRENT I O (mA) VO =5V 10 5 -0.5 VO =-5V 30 100 -1 -3 -5 -10 -30 -50 -100 OUTPUT CURRENT I O (mA) 2002. 1. 24 Revision No : 1 3/3