SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES
Including two devices in TES6. With Built-in bias resistors. Simplify circuit design. Reduce a quantity of parts and manufacturing process.
3
KRX205E
EPITAXIAL PLANAR NPN/PNP TRANSISTOR
B B1
A1
(Thin Extreme Super mini type with 6 pin.)
A
C
1
6
C
2
5
4
P
P
DIM A A1 B B1 C D H J
P
MILLIMETERS _ 1.6 + 0.05 _ 1.0 + 0.05 _ 1.6 + 0.05 _ 1.2 + 0.05 0.50 _ 0.2 + 0.05 _ 0.5 + 0.05 _ 0.12 + 0.05
5
EQUIVALENT CIRCUIT
Q1 R1 OUT Q2 R1 OUT Q1 , Q 2 R1=4.7KΩ
1. 2. 3. 4. 5. 6. Q1 Q1 Q2 Q2 Q2 Q1 COMMON (EMITTER) IN (BASE) OUT (COLLECTOR) COMMON (EMITTER) IN (BASE) OUT (COLLECTOR)
H J
IN
IN
COMMON
COMMON
TES6
EQUIVALENT CIRCUIT (TOP VIEW)
6 5 4
Marking
6 5
Q1
Q2
BE
1 2 3
Q1 MAXIMUM RATING (Ta=25
CHARACTERISTIC Collectoor-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current
)
1
2
3
SYMBOL VCBO VCEO VEBO IC
RATING 50 50 5 100
D
Type Name
4
UNIT V V V
Q2 MAXIMUM RATING (Ta=25
CHARACTERISTIC Collectoor-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current
)
SYMBOL VCBO VCEO VEBO IC RATING -50 -50 -5 -100 UNIT V V V
Q1, Q2 MAXIMUM RATING (Ta=25
CHARACTERISTIC Collector Power Dissipation Junction Temperature Storage Temperature Range * Total Raing.
)
SYMBOL PC * Tj Tstg RATING 200 150 -55 150 UNIT
2002. 1. 24
Revision No : 1
1/3
KRX205E
Q1 ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Input Resistor Ries time Switching Time Storage Time Fall Time SYMBOL ICBO IEBO hFE VCE(sat) fT * R1 tr tstg tf VO=5V, VIN=5V, RL=1k
)
TEST CONDITION VCB=50V, IE=0 VEB=5V, IC=0 VCE=5V, IC=1 IC=10 , IB=0.5 VCE=10V, IC=5 MIN. 120 TYP. 0.1 250 4.7 0.025 3.0 0.2 MAX. 100 100 0.3 V UNIT.
Note : * Characteristic of Transistor Only.
Q2 ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Input Resistor Ries time Switching Time Storage Time Fall Time SYMBOL ICBO IEBO hFE VCE(sat) fT * R1 tr tstg tf
)
TEST CONDITION VCB=-50V, IE=0 VEB=-5V, IC=0 VCE=-5V, IC=-1 IC=-10 , IB=-0.5 VCE=-10V, IC=-5 MIN. 120 VO=-5V, VIN=-5V, RL=1k TYP. -0.1 250 4.7 0.2 2.0 0.3 MAX. -100 -100 -0.3 V UNIT.
Note : * Characteristic of Transistor Only.
2002. 1. 24
Revision No : 1
2/3
KRX205E
h FE - I C
COLLECTOR-EMITTER SATURATIN VOLTAGE VCE(sat) (V) 2k DC CURRENT GAIN h FE 1k 500 300 100 50 30
VCE =5V Ta=100 C Ta=25 C Ta=-25 C Q1
V CE(sat) - I C
2 1 0.5 0.3
Q1 IC /I B =20
0.1 0.05 0.03 0.01 0.1
Ta=100 C Ta=25 C Ta=-25 C
10 0.1
0.3
1
3
10
30
100
0.3
1
3
10
30
100
COLLECTOR CURRENT I C (mA)
COLLECTOR CURRENT I C (mA)
h FE - I C
COLLECTOR-EMITTER SATURATIN VOLTAGE VCE(sat) (V) 2k DC CURRENT GAIN h FE 1k 500 300 100 50 30
VCE =-5V Ta=100 C Ta=25 C Ta=-25 C Q2
V CE(sat) - I C
-2 -1 -0.5 -0.3
Q2 IC /I B =20
-0.1 -0.05 -0.03 -0.01 -0.1
Ta=100 C Ta=25 C Ta=-25 C
10 -0.1
-0.3
-1
-3
-10
-30
-100
-0.3
-1
-3
-10
-30
-100
COLLECTOR CURRENT I C (mA)
COLLECTOR CURRENT I C (mA)
2002. 1. 24
Revision No : 1
3/3
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