KRX211U

SEMICONDUCTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES Including two devices in US6. (Ultra Super mini type with 6 leads.) A1 1 KRX211U EPITAXIAL PLANAR PNP/NPN TRANSISTOR B B1 6 5 4 D With Built-in bias resistors. Simplify circuit design. Reduce a quantity of parts and manufacturing process. 2 DIM A A1 B B1 C D G H 3 MILLIMETERS _ 2.00 + 0.20 _ 1.3 + 0.1 _ 2.1 + 0.1 _ 1.25 + 0.1 0.65 0.2+0.10/-0.05 0-0.1 _ 0.9 + 0.1 0.15+0.1/-0.05 A EQUIVALENT CIRCUIT Q1 C Q2 R1 OUT Q2 R1=2.2KΩ R2=2.2KΩ H C C T G T B IN R2 E COMMON 1. 2. 3. 4. 5. 6. Q1 Q1 Q2 Q2 Q2 Q1 (EMITTER) (BASE) OUT (COLLECTOR) COMMON (EMITTER) IN (BASE) (COLLECTOR) EQUIVALENT CIRCUIT (TOP VIEW) 6 5 4 Marking 6 5 US6 Type Name 4 Q1 Q2 BF 1 2 3 1 2 3 Q1 MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current * Single pulse Pw=1mS. ) SYMBOL VCBO VCEO VEBO IC ICP * RATING -15 -12 -6 -500 -1 UNIT V V V Q2 MAXIMUM RATING (Ta=25 CHARACTERISTIC Output Voltage Input Voltage Output Current ) SYMBOL VO VI IO RATING 50 12, -10 100 UNIT V V Q1, Q2 MAXIMUM RATING (Ta=25 CHARACTERISTIC Power Dissipation Junction Temperature Storage Temperature Range * Total Raing. ) SYMBOL PD * Tj Tstg RATING 200 150 -55 150 UNIT 2002. 2. 18 Revision No : 0 1/4 KRX211U Q1 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance SYMBOL ICBO V(BR)CBO V(BR)CEO V(BR)EBO hFE VCE(sat) fT Cob ) TEST CONDITION VCB=-15V, IE=0 IE=-10 A IC=-1mA IE=-10 A VCE=-2V, IC=-10mA IC=-200mA, IB=-10mA VCE=-2V, IC=-10mA, fT=100MHz VCB=-10V, IE=0, f=1MHz MIN. -15 -12 -6 270 TYP. -100 260 6.5 MAX. -100 680 -250 UNIT nA V V V mV MHz pF Q2 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Output Cut-off Current DC Current Gain Output Voltage Input Voltage (ON) Input Voltage (OFF) Transition Frequency Input Current SYMBOL IO(OFF) GI VO(ON) VI(ON) VI(OFF) fT * II ) TEST CONDITION VO=50V, VI=0 VO=5V, IO=20 IO=10 , II=0.5 VO=0.3V, IO=20 VO=5V, IO=0.1 VO=10V, IO=5 VI=5V MIN. 20 0.5 TYP. 0.1 1.83 1.15 250 MAX. 500 0.3 3 3.8 V V V UNIT. Note : * Characteristic of Transistor Only. 2002. 2. 18 Revision No : 0 2/4 KRX211U Q 1 (PNP TRANSISTOR) h FE - I C 1K DC CURRENT GAIN h FE 500 300 Ta=125 C Ta=25 C Ta=-40 C VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (mV) -1K -500 -300 -100 -50 -30 -10 -5 -3 -1 -1 -3 -10 -30 -100 -300 -1K COLLECTOR CURRENT I C (mA) Ta= 125 I C /IB =20 C 100 50 30 VCE =-2V 25 C C Ta= =-40 Ta 10 -1 -3 -10 -30 -100 -300 -1K COLLECTOR CURRENT I C (mA) VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (mV) -1K -500 -300 -100 -50 -30 -10 -5 -3 -1 -1 -3 -10 -30 -100 -300 -1K I C /IB =50 I C /IB =20 I C /IB =10 Ta=25 C VBE(sat) - I C -10K BASE-EMITTER SATURATION VOLTAGE VBE(sat) (mV) -5K -3K I C /IB =20 -1K -500 -300 Ta=-40 C Ta=25 C C Ta=125 -100 -1 -3 -10 -30 -100 -300 -1K COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) I C - VBE TRANSITION FREQUENCY f T (MHz) -1K COLLECTOR CURRENT IC (mA) -500 -300 -100 Ta=1 25 C 40 C VCE =-2V fT - IC 1K 500 300 VCE =-2V Ta=25 C Ta=2 -50 -30 -10 -5 -3 -1 0 5C 100 50 30 Ta=- 10 -1 -3 -10 -30 -100 -300 -1K -0.5 -1.0 -1.5 BASE-EMITTER VOLTAGE VBE (V) COLLECTOR CURRENT I C (mA) 2002. 2. 18 Revision No : 0 3/4 KRX211U Q 1 (PNP TRANSISTOR) C ob - VCB , C ib - VEB COLLECTOR INPUT CAPACITANCE C ib (PF) COLLECTOR OUTPUT CAPACITANCE C ob (PF) 1K 500 300 100 50 30 10 5 3 1 -0.1 C ob I E =0A f=1MHz Ta=25 C COLLECTOR LPOWER DISSIPATION P C (mW) Pc - Ta 250 200 150 100 50 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE Ta ( C) C ib -0.3 -1 -3 -10 -30 -100 COLLECTOR-BASE VOLTAGE VCB (V) EMITTER-BASE VOLTAGE VEB (V) 100 Q2 I O - V I(ON) 3k Q2 I O - V I(OFF) OUTPUT CURRENT I O (mA) OUTPUT CURRENT IO (µA) 50 30 10 5 3 1 0.5 0.3 0.1 0.1 0.3 1 3 VO =0.2V Ta=100 C 1k 500 Ta=100 Ta=25 Ta=-25 C Ta=25 C Ta=-25 C 300 C 100 50 30 0 0.5 1.0 C VO =5V 10 1.5 2 .0 2.5 3.0 INPUT ON VOLTAGE V I(ON) (V) INPUT OFF VOLTAGE V I(OFF) (V) 300 Q2 GI - IO DC CURRENT GAIN G I 100 50 30 =1 Ta 00 C 10 5 3 1 3 Ta=25 C Ta=-25 C VO =5V 10 30 100 OUTPUT CURRENT I O (mA) 2002. 2. 18 Revision No : 0 4/4