KRX212U

SEMICONDUCTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES Including two devices in US6. (Ultra Super mini type with 6 leads.) A1 1 KRX212U EPITAXIAL PLANAR NPN TRANSISTOR B B1 6 5 4 D With Built-in bias resistors. Simplify circuit design. Reduce a quantity of parts and manufacturing process. 2 DIM A A1 B B1 C D G H 3 MILLIMETERS _ 2.00 + 0.20 _ 1.3 + 0.1 _ 2.1 + 0.1 _ 1.25 + 0.1 0.65 0.2+0.10/-0.05 0-0.1 _ 0.9 + 0.1 0.15+0.1/-0.05 A EQUIVALENT CIRCUIT Q1 C Q2 R1 OUT Q2 R1=2.2KΩ R2=2.2KΩ H C C T G T B IN R2 E COMMON 1. 2. 3. 4. 5. 6. Q1 Q1 Q2 Q2 Q2 Q1 (EMITTER) (BASE) OUT (COLLECTOR) COMMON (EMITTER) IN (BASE) (COLLECTOR) EQUIVALENT CIRCUIT (TOP VIEW) 6 5 4 Marking 6 5 US6 Type Name 4 Q1 Q2 BG 1 2 3 1 2 3 Q1 MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current * Single pulse Pw=1mS. ) SYMBOL VCBO VCEO VEBO IC ICP * RATING 15 12 6 500 1 UNIT V V V Q2 MAXIMUM RATING (Ta=25 CHARACTERISTIC Output Voltage Input Voltage Output Current ) SYMBOL VO VI IO RATING 50 12, -10 100 UNIT V V Q1, Q2 MAXIMUM RATING (Ta=25 CHARACTERISTIC Power Dissipation Junction Temperature Storage Temperature Range * Total Raing. ) SYMBOL PD * Tj Tstg RATING 200 150 -55 150 UNIT 2002. 2. 18 Revision No : 0 1/4 KRX212U Q1 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance SYMBOL ICBO V(BR)CBO V(BR)CEO V(BR)EBO hFE VCE(sat) fT Cob ) TEST CONDITION VCB=15V, IE=0 IE=10 A IC=1mA IE=10 A VCE=2V, IC=10mA IC=200mA, IB=10mA VCE=2V, IC=10mA, fT=100MHz VCB=10V, IE=0, f=1MHz MIN. 15 12 6 270 TYP. 90 320 7.5 MAX. 100 680 250 UNIT nA V V V mV MHz pF Q2 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Output Cut-off Current DC Current Gain Output Voltage Input Voltage (ON) Input Voltage (OFF) Transition Frequency Input Current SYMBOL IO(OFF) GI VO(ON) VI(ON) VI(OFF) fT * II ) TEST CONDITION VO=50V, VI=0 VO=5V, IO=20 IO=10 , II=0.5 VO=0.3V, IO=20 VO=5V, IO=0.1 VO=10V, IO=5 VI=5V MIN. 20 0.5 TYP. 0.1 1.83 1.15 250 MAX. 500 0.3 3 3.8 V V V UNIT. Note : * Characteristic of Transistor Only. 2002. 2. 18 Revision No : 0 2/4 KRX212U Q 1 (NPN TRANSISTOR) h FE - I C 1K DC CURRENT GAIN h FE 500 300 Ta=125 C Ta=25 C Ta=-40 C VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (mV) 1K 500 300 100 50 30 10 5 3 1 1 3 10 C 125 Ta= CC 25 0 Ta= Ta=-4 I C /IB =20 100 50 30 VCE =2V 10 1 3 10 30 100 300 1K 30 100 300 1K COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (mV) 1K 500 300 100 50 30 10 5 3 1 1 I C /IB =50 I C /I B =20 10 I C/I B = VBE(sat) - I C BASE-EMITTER SATURATION VOLTAGE VBE(sat) (mV) 10K 5K 3K I C /IB =20 Ta=25 C 1K 500 300 Ta=-40 C Ta=25 C 5 C Ta=12 100 3 10 30 100 300 1K 1 3 10 30 100 300 1K COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) I C - V BE COLLECTOR CURRENT I C (mA) 500 300 100 Ta=1 25 C Ta=2 VCE =2V fT - IC TRANSITION FREQUENCY f T (MHz) 1K 500 300 VCE =2V Ta=25 C 1K Ta=4 50 30 10 5 3 1 0 5C 0C 100 50 30 10 1 3 10 30 100 300 1K COLLECTOR CURRENT I C (mA) 0.5 1.0 1.5 BASE-EMITTER VOLTAGE VBE (V) 2002. 2. 18 Revision No : 0 3/4 KRX212U Q 1 (NPN TRANSISTOR) C ob - VCB , C ib - VEB 1K 500 300 100 50 30 10 5 3 1 I E =0A f=1MHz Ta=25 C COLLECTOR LPOWER DISSIPATION P C (mW) COLLECTOR INPUT CAPACITANCE C ib (PF) COLLECTOR OUTPUT CAPACITANCE C ob (PF) Pc - Ta 250 200 150 100 50 0 C ib C ob 0 25 50 75 100 125 150 0.1 0.3 1 3 10 30 100 AMBIENT TEMPERATURE Ta ( C) COLLECTOR-BASE VOLTAGE VCB (V) EMITTER-BASE VOLTAGE VEB (V) 100 Q2 I O - V I(ON) 3k Q2 I O - V I(OFF) OUTPUT CURRENT I O (mA) OUTPUT CURRENT I O (µA) 50 30 10 5 3 1 0.5 0.3 0.1 0.1 0.3 1 3 VO =0.2V Ta=100 C 1k 500 Ta=100 Ta=25 Ta=-25 C Ta=25 C Ta=-25 C 300 C 100 50 30 0 0.5 1.0 C VO =5V 10 1.5 2 .0 2.5 3.0 INPUT ON VOLTAGE V I(ON) (V) INPUT OFF VOLTAGE V I(OFF) (V) 300 Q2 GI - IO DC CURRENT GAIN G I 100 50 30 Ta 00 =1 C 10 5 3 1 3 Ta=25 C Ta=-25 C VO =5V 10 30 100 OUTPUT CURRENT I O (mA) 2002. 2. 18 Revision No : 0 4/4