KTA1023-Y-AT/P

SEMICONDUCTOR KTA1023 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH VOLTAGE APPLICATION. B FEATURE D A Complementary to KTC1027. P DEPTH:0.2 G C MAXIMUM RATING (Ta=25 ) RATING UNIT Collector-Base Voltage VCBO -120 V Collector-Emitter Voltage VCEO -120 V Emitter-Base Voltage VEBO -5 V Collector Current IC -800 mA Emitter Current IE 800 mA Collector Power Dissipation PC 1 W Junction Temperature Tj 150 Tstg -55 150 K R SYMBOL J CHARACTERISTIC S Q Storage Temperature Range F F H H E O 1 N 2 H M 3 H L D M DIM A B C D MILLIMETERS 7.20 MAX 5.20 MAX 0.60 MAX 2.50 MAX E F G H J K L M 1.15 MAX 1.27 1.70 MAX 0.55 MAX _ 0.50 14.00 + 0.35 MIN _ 0.10 0.75 + 4 N O 25 1.25 Φ1.50 0.10 MAX _ 0.50 12.50 + 1.00 P Q R S N 1. EMITTER 2. COLLECTOR 3. BASE TO-92L ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=-120V, IE=0 - - -100 nA Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -100 nA Collector-Emitter Saturation Voltage V(BR)CEO IC=-10mA, IB=0 -120 - - V Emitter-Base Breakdwon Voltage V(BR)EBO IE=-1mA, IC=0 -5 - - V DC Current Gain hFE(Note) VCE=-5V, IC=-100mA 80 - 240 VCE(sat) IC=-500mA, IB=-50mA - - -1.0 V Base-Emitter Voltage VBE VCE=-5V, IC=-500mA - - -1.0 V Transition Frequency fT VCE=-5V, IC=-100mA - 120 - MHz VCB=-10V, IE=0, f=1MHz - - 40 pF Collector-Emitter Saturation Voltage Cob Collector Output Capacitance Note : hFE Classification 1997. 6. 24 O:80 160, Y:120 Revision No : 1 240 1/2 KTA1023 1997. 6. 24 Revision No : 1 2/2