SEMICONDUCTOR
TECHNICAL DATA
HIGH VOLTAGE APPLICATION. FEATURES
High Voltage : VCEO=-150V. High Transition Frequency : fT=120MHz (Typ.). Complementary to KTC3206.
C B
KTA1024
EPITAXIAL PLANAR PNP TRANSISTOR
D
A
Low Output Capacitance : Cob=5.0pF(Max.).
P DEPTH:0.2
S
Q K
DIM A B C D E F G H J K L M N O P Q R S
MILLIMETERS 7.20 MAX 5.20 MAX 0.60 MAX 2.50 MAX 1.15 MAX 1.27 1.70 MAX 0.55 MAX _ 14.00 + 0.50 0.35 MIN _ 0.75 + 0.10 4
G J
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IE IB PC Tj Tstg RATING -150 -150 -5 -50 50 -5 1 150 -55 150 UNIT V
O
F H M E
F H M H
R
V V mA mA mA W
1 N
2
3 N
H
L
1. EMITTER 2. COLLECTOR 3. BASE
25 1.25 Φ1.50 0.10 MAX _ 12.50 + 0.50 1.00
TO-92L
ELECTRICAL CHARACTERISTICS (Ta=25°… )
CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance Note : hFE Classification O:70 140, Y:120 SYMBOL ICBO IEBO hFE(Note) VCE(sat) VBE fT Cob 240 TEST CONDITION VCB=-150V, IE=0 VEB=-5V, IC=0 VCE=-5V, IC=-10mA IC=-10mA, IB=-1mA VCE=-5V, IC=-30mA VCE=-30V, IC=-10mA VCB=-10V, IE=0, f=1MHz MIN. 70 TYP. 120 4.0 MAX. -0.1 -0.1 240 -0.8 -0.9 5.0 V V MHz pF UNIT A A
2007. 3. 28
Revision No : 2
D
1/3
KTA1024
I C - VCE
-50 COLLECTOR CURRENT I C (mA)
COMMON
A -1 m A
h FE - I C
500
COMMON EMITTER Ta=25 C VCE =-10V
-40 -30
-2 m
0 -5
A 0µ
EMITTER Ta=25 C -300µA -200µA
DC CURRENT GAIN h FE
300
100 50 30
V CE =-5V
-20
I B =-100µA
VCE =-2V
-10 0 0 -2 -4 -6 -8 -10 -12
10 -0.5
-1
-3
-10
-30
-100
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT IC (mA)
h FE - I C
500 DC CURRENT GAIN h FE 300
Ta=100 C Ta=25 C Ta=-25 C COMMON EMITTER VCE =-5V
VCE(sat) - I C
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) -5 -3
COMMON EMITTER Ta=25 C
100 50 30
-0.5 -0.3
-0.1 -0.05 -0.03 -0.6 -1 -3 -10 -30 -100 -300
10 -0.5
-1
-3
-10
-30
-100
COLLECTOR CURRENT I C (mA)
COLLECTOR CURRENT I C (mA)
VCE(sat) - I C
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) -5 COLLECTOR CURRENT I C (mA) -3
COMMON EMITTER I C /I B =10
I C - VBE
-50 -40 -30 -20 -10 0
Ta=1 00 C
COMMON EMITTER VCE =-5V
-1 -0.5 -0.3
Ta=100 C
-0.1
Ta=25 C
-0.05 Ta=-25 C -0.03 -0.6 -1 -3
-10
-30
-100
-300
0
-0.2
-0.4
-0.6
Ta=2 5C Ta=-25 C
/I B= /IB 20 IC =1 /I 0 B= 5 IC
-1
IC
-0.8
-1.0
-1.2
COLLECTOR CURRENT I C (mA)
BASE-EMITTER VOLTAGE VBE (V)
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Revision No : 2
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KTA1024
SAFE OPERATING AREA
COLLECTOR POWER DISSIPATION PC (W) -300 COLLECTOR CURRENT I C (mA) -100 -50 -30 -10 -5 -3 -1 -1 -3 -10 -30 -100 -300 COLLECTOR-EMITTER VOLTAGE VCE (V)
SINGLE NONREPETITIVE PULSE Ta=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE I C MAX(PULSE) I C MAX(CONTINUOUS)
DC OP ER
10 0m 50 s 0m s
Pc - Ta
1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 AMBIENT TEMPERATURE Ta ( C)
AT
IO
N
2007. 3. 28
Revision No : 2
3/3
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