KTA1046_11

SEMICONDUCTOR TECHNICAL DATA INDUSTRIAL USE. GENERAL PURPOSE APPLICATION. FEATURES ・Low Collector Saturation Voltage : VCE(sat)=-1.0V(Max.) at IC=-2A, IB=-0.2A. ・Complementary to KTC2026. KTA1046 EPITAXIAL PLANAR PNP TRANSISTOR MAXIMUM RATING (Ta=25℃) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range Ta=25℃ Tc=25℃ SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING -60 -60 -7 -3 -0.5 2 W 20 150 -55～150 ℃ ℃ UNIT V V V A A ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance Turn-on Time Switching Time Storage Time Fall Time Note : hFE(1) Classification Y:100～200, SYMBOL ICBO IEBO V(BR)CEO hFE(1) (Note) hFE(2) VCE(sat) VBE fT Cob ton tstg tf GR:150～300 TEST CONDITION VCB=-60V, IE=0 VEB=-7V, IC=0 IC=-50mA, IB=0 VCE=-5V, IC=-0.5A VCE=-5V, IC=-3A IC=-2A, IB=-0.2A VCE=-5V, IC=-0.5A VCE=-5V, IC=-0.5A VCB=-10V, IE=0, f=1MHz MIN. -60 100 20 TYP. -0.25 -0.7 30 45 0.4 1.7 0.5 MAX. -1 -1 300 -1.0 -1.0 μ S V V MHz pF UNIT μ A μ A V 2011. 7. 13 Revision No : 4 1/2 KTA1046 2011. 7. 13 Revision No : 4 2/2