KTA1204D

KTA1204D

  • 厂商:

    KEC

  • 封装:

  • 描述:

    KTA1204D - EPITAXIAL PLANAR PNP TRANSISTOR (HIGH CURRENT SWITCHING) - KEC(Korea Electronics)

  • 详情介绍
  • 数据手册
  • 价格&库存
KTA1204D 数据手册
SEMICONDUCTOR TECHNICAL DATA HIGH CURRENT SWITCHING APPLICATION. APPLICATION Relay drivers, high-speed inverters, converters, and other general high-current switching applications. A C KTA1204D/L EPITAXIAL PLANAR PNP TRANSISTOR I J FEATURES Low Collector Emitter Saturation Voltage. : VCE(sat)=-0.4V(Max.) (IC=-4A) High Current and High fT : IC=-8A, fT=130MHz. Excellent Linearity of hFE High Speed Switching Time. : fT=20nS (Typ.) Complementary to KTC1804D/L 1. BASE 2. COLLECTOR 3. EMITTER 1 H F 2 F 3 P L DIM A B C D E F H I J K L M O P Q MILLIMETERS _ 6.60 + 0.2 _ 6.10 + 0.2 _ 5.0 + 0.2 _ 1.10 + 0.2 _ 2.70 + 0.2 _ 2.30 + 0.1 1.00 MAX _ 2.30 + 0.2 _ 0.5 + 0.1 _ 2.00 + 0.20 _ 0.50 + 0.10 _ 0.91+ 0.10 _ 0.90 + 0.1 _ 1.00 + 0.10 0.95 MAX B K E M Q D MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltag Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range DC Pulse Ta=25 Tc=25 ) SYMBOL VCBO VCEO VEBO IC ICP PC Tj Tstg RATING -60 -60 -6 -8 -12 1.0 20 150 -55 150 F F L UNIT V V V A A C DPAK I J D O K W H G P 1 2 3 DIM A B C D E F G H I J K L P Q MILLIMETERS _ 6.60 + 0.2 _ 6.10 + 0.2 _ 5.0 + 0.2 _ 1.10 + 0.2 _ 9.50 + 0.6 _ 2.30 + 0.1 _ 0.76 + 0.1 1.0 MAX _ 2.30 + 0.2 _ 0.5 + 0.1 _ 2.0 + 0.2 _ 0.50 + 0.1 _ 1.0 + 0.1 0.90 MAX Q 1. BASE 2. COLLECTOR 3. EMITTER E B IPAK 2003. 3. 27 Revision No : 2 1/4 KTA1204D/L ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-base Breakdown Voltage Gain-Bandwidth Product Collector Output Capacitance Turn On Time Switching Time Storage Time Fall Time SYMBOL ICBO IEBO hFE (1) (Note) hFE (2) VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO fT Cob ton 0 TEST CONDITION VCB=-40V, IE=0 VEB=-4V, IC=0 VCE=-2V, IC=-0.5A VCE=-2V, IC=-6A IC=-4A, IB=-0.2A IC=-4A, IB=-0.2A IC=-10 A, IE=0 IC=-1mA, RBE= IE=-10 A, IC=0 VCE=-5V, IC=-1A VCB=-10V, IE=0, f=1MHz OUTPUT 6.25Ω I B2 INPUT I B1 I B2 MIN. 100 35 -60 -50 -6 - TYP. -250 -0.95 MAX. -1 -1 400 -500 -1.3 UNIT A A mV mV V V 130 95 50 450 20 - V MHz pF tstg tf IB1 20µsec nS DUTY CYCLE < 1% = -IB1 =IB2=0.4A VCC =-25V Note : hFE Classification O:100~200, Y:140~280, GR:200~400. 2003. 3. 27 Revision No : 2 2/4 KTA1204D/L I C - V CE -10 COLLECTOR CURRENT I C (A) COLLECTOR CURRENT IC (A) -8 -6 -4 -2 0 m 160 A A 40m -120m A A -100m -80mA I C - V CE -5 -4 -3 -2 -1 0 -30mA -25mA -20mA -15mA -1 -60mA -40mA -10mA -5mA I B =0mA -20mA -10mA I B =0mA 0 -0.4 -0.8 -1.2 -1.6 -2.0 0 -2 -4 -6 -8 -10 COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR-EMITTER VOLTAGE V CE (V) I C - V BE -8 COLLECTOR CURRENT IC (A) -7 -6 -5 Ta= 75 C Ta= 25 Ta=- C 25 C VCE =-2V h FE - I C 1k DC CURRENT GAIN h FE 500 300 Ta=75 C Ta=25 C Ta=-25 C V CE =-2V -4 -3 -2 -1 0 0 -0.2 -0.4 -0.6 100 50 30 -0.8 -1.0 -1.2 10 -0.01 -0.03 -0.1 -0.3 -1 -3 -10 -20 BASE-EMITTER VOLTAGE V BE (V) COLLECTOR CURRENT I C (mA) fT - IC COLLECTOR OUTPUT CAPACITANCE C ob (pF) TRANSITION FREQUENCY f T (MHz) 500 300 VCE =-5V C ob - VCB 500 300 f=1MHz 100 50 30 100 50 30 10 -0.02 -0.05 -0.1 -0.3 -0.5 -1 -3 -5 10 -1 -3 -5 -10 -30 -50 -100 COLLECTOR-BASE VOLTAGE VCB (V) COLLECTOR CURRENT I C (mA) 2003. 3. 27 Revision No : 2 3/4 KTA1204D/L VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (mV) -1K -500 -300 BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) I C /I B =20 VBE(sat) - I C -5 -3 I C /I B =20 -1 -0.5 -0.3 Ta=-25 C Ta=25 C -100 -50 -30 C C 5 75 =-2 Ta= Ta C 25 Ta= Ta=75 C -10 -0.01 -0.03 -0.1 -0.3 -1 -3 -10 -0.1 -0.01 -0.03 -0.1 -0.3 -1 -3 -10 COLLECTOR CURRENT I C (A) COLLECTOR CURRENT IC (A) SAFE OPERATING AREA -10 COLLECTOR CURRENT I C (A) -5 -3 -1 -0.5 -0.3 -0.1 -0.05 -0.03 I C (Pulse)MAX. * I C (DC)MAX. DC OP Pc - Ta COLLECTOR POWER DISSIPATION P C (W) 24 20 16 12 8 4 0 Tc =2 5 C -20 DC ER AT 10 1 1mS 0m 0m * S* S* OP Tc E RA =2 5 T C IO N IO N Ta =2 5 C * SINGLE NONREPETITIVE PULSE Tc=25 C CURVES MUST BE DERATED LINEARLY WIHT INCREASE IN TEMPERATURE. Ta=25 C 0 20 40 60 80 100 120 140 160 -0.01 -0.1 AMBIENT TEMPERATURE Ta ( C) -10 -30 -100 -0.3 -1 -3 COLLECTOR-EMITTER VOLTAGE VCE (V) 2003. 3. 27 Revision No : 2 4/4
KTA1204D
### 物料型号 - 型号:KTA1204D/L

### 器件简介 - 描述:KTA1204D/L是一款适用于高电流开关应用的PNP晶体管,例如继电器驱动器、高速逆变器、转换器以及其他一般高电流开关应用。

### 引脚分配 - 引脚1:基极(BASE) - 引脚2:集电极(COLLECTOR) - 引脚3:发射极(EMITTER)

### 参数特性 - 最大集电极-发射极饱和电压:\( V_{CE(sat)} = -0.4 \text{ V} \)(最大值,\( I_C = -4 \text{ A} \)) - 高电流和高截止频率:\( I_C = -8 \text{ A}, f_T = 130 \text{ MHz} \) - 优秀的电流增益线性特性:\( h_{FE} \) 的线性特性图已提供。 - 高速开关时间:\( f_T = 20 \text{ nS} \)(典型值)

### 功能详解 - 集电极截止电流:\( I_{CBO} \) 在 \( V_{CB} = -40 \text{ V}, I_E = 0 \) 时,最小值为 -1 A。 - 发射极截止电流:\( I_{EBO} \) 在 \( V_{EB} = -4 \text{ V}, I_C = 0 \) 时,最小值为 -1 A。 - 直流电流增益:\( h_{FE} \) 在 \( V_{CE} = -2 \text{ V}, I_C = -0.5 \text{ A} \) 时,最小值为 100,典型值为 400;在 \( V_{CE} = -2 \text{ V}, I_C = -6 \text{ A} \) 时,最小值为 35。 - 集电极-发射极饱和电压:\( V_{CE(sat)} \) 在 \( I_C = -4 \text{ A}, I_B = -0.2 \text{ A} \) 时,最小值为 -250 mV,最大值为 -500 mV。 - 基极-发射极饱和电压:\( V_{BE(sat)} \) 在 \( I_C = -4 \text{ A}, I_B = -0.2 \text{ A} \) 时,最小值为 -0.95 mV,最大值为 -1.3 mV。 - 增益-带宽积:\( f_T \) 在 \( V_{CE} = -5 \text{ V}, I_C = -1 \text{ A} \) 时,为 130 MHz。

### 应用信息 - 应用:继电器驱动器、高速逆变器、转换器以及其他一般高电流开关应用。

### 封装信息 - DPAK 和 IPAK 两种封装方式的尺寸参数已提供,包括长、宽、高及其他相关尺寸。
KTA1204D 价格&库存

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