SEMICONDUCTOR
TECHNICAL DATA
STROBO FLASH APPLICATION. HIGH CURRENT APPLICATION.
A
KTA1242D/L
EPITAXIAL PLANAR PNP TRANSISTOR
I J
FEATURES
hFE=100 320 (VCE=-2V, IC=-0.5A). Low Collector Saturation Voltage. : VCE(sat)=-0.5V (IC=-3A, IB=-75mA).
Q
C
H
P F 1 2 F 3 L
MAXIMUM RATING (Ta=25
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltag Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range
)
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING -35 -20 -8 -5 -0.5 1.0 150 -55 150
Q
UNIT V V V A A W
A C I J
DIM A B C D E F H I J K L M O P Q
MILLIMETERS _ 6.60 + 0.2 _ 6.10 + 0.2 _ 0.2 5.0 + _ 1.10 + 0.2 _ 2.70 + 0.2 _ 2.30 + 0.1 1.00 MAX _ 2.30 + 0.2 _ 0.5 + 0.1 _ 0.20 2.00 + _ 0.50 + 0.10 _ 0.91+ 0.10 _ 0.90 + 0.1 _ 1.00 + 0.10 0.95 MAX
B K E M
D
1. BASE 2. COLLECTOR 3. EMITTER
DPAK
D
O
H G
P
F
F
L
1
2
3
DIM A B C D E F G H I J K L P Q
MILLIMETERS _ 6.60 + 0.2 _ 6.10 + 0.2 _ 0.2 5.0 + _ 0.2 1.10 + _ 9.50 + 0.6 _ 2.30 + 0.1 _ 0.76 + 0.1 1.0 MAX _ 2.30 + 0.2 _ 0.5 + 0.1 _ 0.2 2.0 + _ 0.50 + 0.1 _ 1.0 + 0.1 0.90 MAX
K
1. BASE 2. COLLECTOR 3. EMITTER
E
B
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance Note : hFE(1) Classification O:100~200, Y:160~320
)
TEST CONDITION VCB=-35V, IE=0 VEB=-8V, IC=0 IC=-10mA, IB=0 IE=-1mA, IC=0 VCE=-2V, IC=-0.5A VCE=-2V, IC=-4A IC=-3A, IB=-75mA VCE=-2V, IC=-4A VCE=-2V, IC=-0.5A VCB=-10V, IE=0, f=1MHz MIN. -20 -8 100 70 ICBO IEBO
IPAK
SYMBOL
TYP. 170 62
MAX. -100 -100 320 -0.5 -1.5 -
UNIT nA nA V V
V(BR)CEO V(BR)EBO hFE(1) (Note) hFE(2) VCE(sat) VBE fT Cob
V V MHz pF
2003. 3. 27
Revision No : 4
1/2
KTA1242D/L
I C - VCE
-8 COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A)
-150mA -100mA -70mA -50mA COMMON EMITTER Tc=25 C
I C - VBE
-8
-6
-6
C 100
-4
-30mA -20mA I B =-10mA
-4
Tc=
Tc=-25 C
-2 0
-2
Tc=25 C
COMMON EMITTER V CE =-2V
0
-2
-4
-6
-8
-10
0
0
-0.4
-0.8
-1.2
-1.6
-2.0
COLLECTOR-EMITTER VOLTAGE VCE (V)
BASE-EMITTER VOLTAGE VBE (V)
h FE - I C
COLLECTOR-EMITTER SATURATION VOLTAGE V CE(sat) (V) 1k DC CURRENT GAIN h FE 500 300
Tc=100 C Tc=25 C Tc=-25 C
VCE(sat) - I C
-3
COMMON EMITTER I C /I B =40
-1 -0.5 -0.3
Tc =1 00 C
Tc=25 C Tc=-25 C
100 50 30
COMMON EMITTER VCE =-2V
-0.1 -0.05 -0.03 -0.01
10 -0.01
-0.03
-0.1
-0.3
-1
-3
-10
-0.03
-0.1
-0.3
-1
-3
-10
COLLECTOR CURRENT I C (A)
COLLECTOR CURRENT I C (A)
COLLECTOR POWER DISSIPATION P C (W)
Pc - Ta
1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160
Ta =2
SAFE OPERATING AREA
-20 COLLECTOR CURRENT I C (A) -10 -5 -3 -1 -0.5 -0.3
I C MAX.(PULSED) I C MAX. (CONTINUOUS) **
10 m S*
100mS*
D OC Tc PER =2 AT 5 C ION
VCEO MAX.
5
C
-0.1 -0.3 -0.5
* SINGLE PULSE Tc=25 C ** PULSE WIDTH=10ms(MAX) DUTY CYCLE=30%(MAX) CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE
-1
-3
-5
-10
-30 -50
AMBIENT TEMPERATURE Ta ( C)
COLLECTOR-EMITTER VOLTAGE VCE (V)
2003. 3. 27
Revision No : 4
2/2
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