KTA1266-Y-AT/P

SEMICONDUCTOR KTA1266 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・Excellent hFE Linearity : hFE(2)=80(Typ.) at VCE=-6V, IC=-150mA : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). ・Low Noise : NF=1dB(Typ.). at f=1kHz. ・Complementary to KTC3198. MAXIMUM RATING (Ta=25℃) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -5 V Collector Current IC -150 mA Base Current IB -50 mA 625 *PC Collector Power Dissipation mW 400 Junction Temperature Storage Temperature Range Tj 150 ℃ Tstg -55～150 ℃ *Cu Lead-Frame : 625mW Fe Lead-Frame : 400mW ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=-50V, IE=0 - - -0.1 μA Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -0.1 μA VCE=-6V, IC=-2mA 70 - 400 hFE(2) VCE=-6V, IC=-150mA 25 - - Collector-Emitter Saturation Voltage VCE(sat) IC=-100mA, IB=-10mA - -0.1 -0.3 V Base-Emitter Saturation Voltage VBE(sat) IC=-100mA, IB=-10mA - - -1.1 V 80 - - MHz hFE(1) (Note) DC Current Gain fT Transition Frequency VCE=-10V, IC=-1mA Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - 4.0 7.0 pF Base Intrinsic Resistance rbb’ VCB=-10V, IE=1mA, f=30MHz - 30 - Ω Noise Figure NF VCE=-6V, IC=-0.1mA, Rg=10kΩ, f=1kHz - 1.0 10 dB Note : hFE(1) Classification O:70～140, 2013. 7. 08 Y:120～240, Revision No : 4 GR:200～400 1/2 KTA1266 2013. 7. 08 Revision No : 4 2/2