KTA1270_07

厂商：
KEC
封装：
描述：
KTA1270_07 - EPITAXIAL PLANAR PNP TRANSISTOR - KEC(Korea Electronics)

数据手册：

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数据手册
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KTA1270_07 数据手册

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B KTA1270 EPITAXIAL PLANAR PNP TRANSISTOR C FEATURES : hFE(2)=25(Min.) at VCE=-6V, IC=-400mA. Complementary to KTC3202. K D E G N A Excellent hFE Linearity MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range ) SYMBOL VCBO VCEO VEBO IC IE PC Tj Tstg RATING -35 -30 -5 -500 500 625 150 -55 150 UNIT F H F V L V V mA mA mW 1 2 3 M C DIM A B C D E F G H J K L M N MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 14.00 + 0.50 0.55 MAX 2.30 + 0.30 - 0.10 0.05 1.00 J 1. EMITTER 2. COLLECTOR 3. BASE TO-92 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain ) TEST CONDITION VCB=-35V, IE=0 VEB=-5V, IC=0 VCE=-1V, IC=-100mA VCE=-6V, IC=-400mA IC=-100mA, IB=-10mA VCE=-1V, IC=-100mA VCE=-6V, IC=-20mA VCB=-6V, IE=0, f=1MHz MIN. 70 25 TYP. -0.1 -0.8 200 13 MAX. -0.1 -0.1 240 -0.25 -1.0 V V MHz pF UNIT A A SYMBOL ICBO IEBO hFE(1) (Note) hFE(2) (Note) Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance Note : hFE(1) Classification hFE(2) Classification 0:70 140, 0:25Min., Y:120 VCE(sat) VBE fT Cob 240 Y:40Min. 2007. 6. 8 Revision No : 1 1/2 KTA1270 IC - VCE COLLECTOR CURRENT IC (mA) -600 COMMON EMITTER Ta=25 C -4 -3 hFE - IC 1k COMMON EMITTER DC CURRENT GAIN hFE -500 -400 -300 -200 -100 0 0 -8 -7 -6 -5 500 300 Ta=100 C Ta=25 C VCE =-6V -2 I B =-1mA 100 50 30 Ta=-25 C VCE =-1V 0 -1 -2 -3 -4 -5 10 -0.3 -1 -3 -10 -30 -100 -300 -1k COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (mA) VCE(sat) - IC COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) -3 -3k COMMON EMITTER I C /I B =10 COMMON IB - VBE BASE CURRENT IB (µA) -1k -300 -100 -30 -10 -3 -1 -0.3 0 -1 -0.5 -0.3 -0.1 -0.05 -0.03 -0.01 -0.5 -1 -3 -10 Ta=100 C Ta=25 C Ta=-25 C EMITTER VCE =-6V 00 C Ta=2 5C Ta=25 C -30 -100 -300 -1k -0.2 -0.4 Ta=1 -0.6 -0.8 -1.0 -1.2 COLLECTOR CURRENT IC (mA) BASE-EMITTER VOLTAGE VBE (V) SAFE OPERATING AREA COLLECTOR CURRENT IC (mA) -10000 IC MAX(PULSE)* 1mS* IC MAX(CONTINUOUS) 10mS* 100mS* -1000 -100 DC DPERATION(Ta=25 C) -10 *SINGLE NONREPETITIVE PULSE Ta=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE -1 -0.1 -1 -10 -100 COLLECTOR-EMITTER VOLTAGE VCE (V) 2007. 6. 8 Revision No : 1 2/2

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KTA1270_07

1. 物料型号：KTA1270EPITA

2. 器件简介： - KTA1270EPITA是一款通用的PNP晶体管，适用于开关应用。 - 特点包括优秀的hFE线性，hFE(2)最小值为25，在VCE=-6V、IC=-400mA时。

3. 引脚分配： - 1.发射极(EMITTER) - 2.集电极(COLLECTOR) - 3.基极(BASE)

4. 参数特性： - 最大额定值： - 集-基电压：VCBO -35V - 集-射电压：VCEO -30V - 发-基电压：VEBO -5V - 集电极电流：Ic -500mA - 基极电流：IE 500mA - 集电极功率耗散：Pc 625mW - 结温：Tj 150°C - 存储温度范围：Tstg -55~150°C - 电气特性： - 集电极截止电流：ICBO -0.1μA - 发射极截止电流：IEBO -0.1μA - DC电流增益：hFE(1) 70至240，hFE(2) 25至无上限 - 集-射饱和电压：VCE(sat) -0.25V - 基-发射电压：VBE -0.8至-1.0V - 转换频率：fT 200MHz - 集电极输出电容：Cob 13pF

5. 功能详解： - 该晶体管具有优秀的hFE线性，适用于需要精确控制hFE的应用场合。 - 与KTC3202互补。

6. 应用信息： - 适用于通用应用和开关应用。

7. 封装信息： - 封装类型为TO-92，具体尺寸参数如下： - A 最大4.70mm - B 最大4.80mm - C 最大3.70mm - D 0.45mm - E 1.00mm - F 1.27mm - G 0.85mm - H 0.45mm - J 14.00mm±0.50mm - K 最大0.55mm - L 230mm - M 0.30mm±0.10mm - N 1.00mm

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