SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.
B
KTA1270
EPITAXIAL PLANAR PNP TRANSISTOR
C
FEATURES
: hFE(2)=25(Min.) at VCE=-6V, IC=-400mA. Complementary to KTC3202.
K D E G N
A
Excellent hFE Linearity
MAXIMUM RATING (Ta=25
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range
)
SYMBOL VCBO VCEO VEBO IC IE PC Tj Tstg RATING -35 -30 -5 -500 500 625 150 -55 150 UNIT
F
H
F
V
L
V V mA mA mW
1
2
3
M
C
DIM A B C D E F G H J K L M N
MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 14.00 + 0.50 0.55 MAX 2.30 + 0.30 - 0.10 0.05 1.00
J
1. EMITTER 2. COLLECTOR 3. BASE
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain
)
TEST CONDITION VCB=-35V, IE=0 VEB=-5V, IC=0 VCE=-1V, IC=-100mA VCE=-6V, IC=-400mA IC=-100mA, IB=-10mA VCE=-1V, IC=-100mA VCE=-6V, IC=-20mA VCB=-6V, IE=0, f=1MHz MIN. 70 25 TYP. -0.1 -0.8 200 13 MAX. -0.1 -0.1 240 -0.25 -1.0 V V MHz pF UNIT A A
SYMBOL ICBO IEBO hFE(1) (Note) hFE(2) (Note)
Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance Note : hFE(1) Classification hFE(2) Classification 0:70 140, 0:25Min., Y:120
VCE(sat) VBE fT Cob 240
Y:40Min.
2007. 6. 8
Revision No : 1
1/2
KTA1270
IC - VCE
COLLECTOR CURRENT IC (mA)
-600
COMMON EMITTER Ta=25 C -4 -3
hFE - IC
1k
COMMON EMITTER
DC CURRENT GAIN hFE
-500 -400 -300 -200 -100 0 0
-8 -7
-6
-5
500 300
Ta=100 C Ta=25 C VCE =-6V
-2 I B =-1mA
100 50 30
Ta=-25 C
VCE =-1V
0
-1
-2
-3
-4
-5
10 -0.3
-1
-3
-10
-30
-100
-300
-1k
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT IC (mA)
VCE(sat) - IC
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V)
-3 -3k
COMMON EMITTER I C /I B =10 COMMON
IB - VBE
BASE CURRENT IB (µA)
-1k -300 -100 -30 -10 -3 -1 -0.3 0
-1 -0.5 -0.3 -0.1 -0.05 -0.03 -0.01 -0.5 -1 -3 -10
Ta=100 C Ta=25 C Ta=-25 C
EMITTER VCE =-6V
00 C Ta=2 5C Ta=25 C
-30
-100
-300
-1k
-0.2
-0.4
Ta=1
-0.6
-0.8
-1.0
-1.2
COLLECTOR CURRENT IC (mA)
BASE-EMITTER VOLTAGE VBE (V)
SAFE OPERATING AREA
COLLECTOR CURRENT IC (mA)
-10000
IC MAX(PULSE)* 1mS* IC MAX(CONTINUOUS) 10mS* 100mS*
-1000
-100
DC DPERATION(Ta=25 C)
-10
*SINGLE NONREPETITIVE PULSE Ta=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE
-1 -0.1
-1
-10
-100
COLLECTOR-EMITTER VOLTAGE VCE (V)
2007. 6. 8
Revision No : 1
2/2
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