KTA1279

SEMICONDUCTOR TECHNICAL DATA HIGH VOLTAGE APPLICATION. TELEPHONE APPLICATION. B KTA1279 EPITAXIAL PLANAR PNP TRANSISTOR C MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature ) SYMBOL VCBO VCEO VEBO IC IE PC Tj Tstg RATING -300 -300 -5.0 -500 500 625 150 -55 150 UNIT V V V mA mA L H A N K D G E F F mW M 1 2 3 C DIM A B C D E F G H J K L M N MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 14.00 + 0.50 0.55 MAX 2.30 0.45 MAX 1.00 J 1. EMITTER 2. COLLECTOR 3. BASE TO-92 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current ) TEST CONDITION IC=-100 A, IE=0 IC=-1.0mA, IB=0 IC=-1.0mA, VCE=-10V MIN. -300 -300 25 40 25 50 TYP. MAX. -0.5 -0.9 6.0 V V MHz pF UNIT V V SYMBOL V(BR)CBO V(BR)CEO DC Current Gain hFE * IC=-10mA, VCE=-10V IC=-30mA, VCE=-10V Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Note :* Pulse test : PW 300 S, VCE(sat) * VBE(sat) * fT Cob IC=-20mA, IB=-2.0mA IC=-20mA, IB=-2.0mA VCE=-20V, IC=-10mA, f=100MHz VCB=-20V, IE=0, f=1MHz Duty Cycle 2% 2005. 8. 30 Revision No : 1 1/2 KTA1279 h FE - I C VCE =10VDC fT - IC TRANSITION FREQUENCY f T (MHz) 100 300 DC CURRENT GAIN h FE T j =125 C 100 50 30 T j =25 C T j =-55 C 50 30 T j =25 C VCE =20VDC 10 -1 -3 -5 -10 -30 -50 -100 0 -1 -3 -5 -10 -30 -50 -100 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) C ob - V R COLLECTOR OUTPUT CAPACITANCE C ob (pF) 100 50 30 C ib I C - V CE BONDING WIRE LIMITATION SECOND BREAK DOWN LIMITATION T j =150 C COLLECTOR CURRENT I C (mA) -500 mS 1.0 -300 100µS 10 5 3 C ob -100 -50 -30 1 -0.1 -0.3 -1 -3 -10 -30 -100 -300 -1k 1. DC LI 5 W MA IT TT AT T IO HE N RM Tc A 62 =2 L LI 5 m 5 MW C IT T AT HE IO RM N Ta AL =2 5 C REVERSE VOLTAGE V R (V) -10 -5 -3 -5 -10 -30 -50 -100 -300 COLLECTOR-EMITTER VOLTAGE VCE (V) V BE(sat) , V CE(sat) - I C -1.0 SATURATION VOLTAGE V BE(sat), V CE(sat) (V) -0.8 V BE(sat) I C /I B =10 -0.6 -0.4 -0.2 0 -1 VCE(sat) -3 -5 -10 -30 -50 -100 COLLECTOR CURRENT I C (mA) 2005. 8. 30 Revision No : 1 2/2