KTA1381

SEMICONDUCTOR TECHNICAL DATA HIGH-DEFINITION CRT DISPLAY, VIDEO OUTPUT APPLICATIONS. C KTA1381 EPITAXIAL PLANAR PNP TRANSISTOR A B E F G D FEATURES High breakdown voltage : VCEO 300V. Small reverse transfer capacitance and excellent high frequency characteristic. : Cre=2.3pF (VCB=30V, f=1MHz) Complementary KTC3503. H J K L MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range DC Pulse Ta=25 Tc=25 ) SYMBOL VCBO VCEO VEBO IC ICP PC Tj Tstg RATING -300 -300 -5 -100 -200 1.5 7 150 -55 150 UNIT V V V mA N M O 1 2 3 P 1. EMITTER 2. COLLECTOR 3. BASE DIM A B C D E F G H J K L M N O P MILLIMETERS 8.3 MAX 5.8 0.7 _ Φ3.2 + 0.1 3.5 _ 11.0 + 0.3 2.9 MAX 1.0 MAX 1.9 MAX _ 0.75 + 0.15 _ 15.50 + 0.5 _ 2.3 + 0.1 _ 0.65 + 0.15 1.6 3.4 MAX TO-126 W ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Transition Frequency Collector Output Capacitance Reverse Transfer Capacitance Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Base-Emitter Breakdown Voltage Note : hFE Classification O:60 120, Y:100 ) TEST CONDITION VCB=-200V, IE=0 VEB=-4V, IC=0 VCE=-10V, IC=-10mA VCE=-30V, IC=-10mA VCB=-30V, IE=0, f=1MHz VCB=-30V, IE=0, f=1MHz IC=-20mA, IB=-2mA IC=-20mA, IB=-2mA IC=-10 A, IE=0 IC=-1mA, IB=0 IE=-10 A, IC=0 MIN. 60 -300 -300 -5 TYP. 150 3.1 2.3 MAX. -0.1 -0.1 200 -0.6 -1.0 MHz pF pF V V V V V UNIT A A ICBO IEBO SYMBOL hFE (Note) fT Cob Cre VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO 200 2003. 7. 24 Revision No : 3 1/3 KTA1381 I C - VCE COLLECTOR CURRENT I C (mA) -20 -16 -12 -8 -4 0 COLLECTOR CURRENT I C (mA) I B =-140µA I B =-120µA I B =-100µA I B =-80µA I B =-60µA I B =-40µA I B =-20µA I B =0 I C - VCE -10 -8 -6 -4 -2 0 IB=-60µA IB=-50µA IB=-40µA IB=-30µA IB=-20µA IB=-10µA IB=0 0 -2 -4 -6 -8 -10 0 -2 -4 -6 -8 -10 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER VOLTAGE VCE (V) I C - VBE -120 COLLECTOR CURRENT I C (mA) DC CURRENT GAIN h FE -100 -80 -60 -40 -20 0 0 -0.2 -0.4 -0.6 -0.8 -1.0 Ta=75 C Ta=25 C Ta=-2 5C h FE - I C 500 300 VCE =-10V Ta=75 C Ta=25 C Ta=-25 C VCE =-10V 100 50 30 10 -0.5 -1 -3 -10 -30 -100 BASE-EMITTER VOLTAGE VBE (V) COLLECTOR CURRENT I C (mA) fT - IC TRANSITION FREQUENCY f T (MHz) 500 300 OUTPUT CAPACITANCE C ob (pF) VCE =-30V C Ob - VCB 50 30 f T =1MHz 100 50 30 10 5 3 10 -0.5 -1 -3 -10 -30 -100 1 -0.5 -1 -3 -10 -30 -100 COLLECTOR CURRENT I C (mA) COLLECTOR BASE VOLTAGE V CB (V) 2003. 7. 24 Revision No : 3 2/3 KTA1381 C re - V CB COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 50 REVERSE TRANSFER CAPACITANCE C re (pF) 30 f T =1MHz VCE(sat) - I C -1 -0.5 -0.3 I C /I B=10 10 5 3 -0.1 -0.05 -0.03 -0.5 -1 -3 -10 -30 -100 -200 1 -0.5 -1 -3 -10 -30 -100 COLLECTOR BASE VOLTAGE VCB (V) COLLECTOR CURRENT I C (mA) VBE(sat) - I C -10 BASE-EMITTER SATURATION VOLTAGE V BE(sat) (V) -5 -3 IC /I B =10 SAFE OPERATING AREA -300 COLLECTOR CURRENT I C (mA) I C MAX.(PULSED)* 1m 50 10 -100 -50 -30 I C MAX.(CONTINUOUS) DC 0µ S* -1 -0.5 -0.3 -0.5 -1 -3 -10 -30 -100 -200 OP Ta ER =2 AT 5 C ION D Tc C O =2 PE 5 RA CT 0m S* IO S* N -10 -5 -3 -3 COLLECTOR CURRENT I C (mA) * SINGLE NONREPETITIVE PULSE Tc=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE -10 -30 -100 -300 COLLECTOR EMITTER VOLTAGE VCE (V) Pc - Ta COLLECTOR POWER DISSIPATION PC (W) 8 (1) (1) Tc=Ta INFINITE HEAT SINK (2) NO HEAT SINK 6 4 2 (2) 0 0 50 100 150 200 AMBIENT TEMPERATURE Ta ( C) 2003. 7. 24 Revision No : 3 3/3