SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES
Excellent hFE Linearity : hFE(0.1mA)/hFE(2mA)=0.95(Typ.).
A
L
KTA1504S
EPITAXIAL PLANAR PNP TRANSISTOR
E B
L
Complementary to KTC3875S.
G
Low Noise : NF=1dB(Typ.), 10dB(Max.).
2
3
1
P
P
C
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range
VCBO VCEO VEBO IC IB PC Tj Tstg
-50 -50 -5 -150 -30 150 150 -55 150
V V V mA mA mW
1. EMITTER 2. BASE 3. COLLECTOR
K
CHARACTERISTIC
SYMBOL
RATING
UNIT
M
SOT-23
Marking
h FE Rank Type Name Lot No.
AS
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Noise Figure Note : hFE Classification O:70 140 , Y:120 ICBO IEBO
)
TEST CONDITION VCB=-50V, IE=0 VEB=-5V, IC=0 VCE=-6V, IC=-2mA IC=-100mA, IB=-10mA VCE=-10V, IC=-1mA VCB=-10V, IE=0, f=1MHz VCE=-6V, IC=-0.1mA f=1kHz, Rg=10k 400 MIN. 70 80 TYP. -0.1 4.0 1.0 MAX. -0.1 -0.1 400 -0.3 7.0 10 V MHz pF dB UNIT A A
SYMBOL
hFE(Note) VCE(sat) fT Cob NF
240 , GR(G):200
2001. 2. 24
Revision No : 2
J
MAXIMUM RATING (Ta=25
)
DIM A B C D E G H J K L M N P
MILLIMETERS _ 2.93 + 0.20 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7
N
H
D
1/2
KTA1504S
I C - V CE
-240 COLLECTOR CURRENT I C (mA) -200 -160 -120
-0.5 -2.0 COMMON EMITTER Ta=25 C -1.5 -1.0
h FE - I C
3k DC CURRENT GAIN h FE
COMMON EMITTER
1k 500 300
Ta=100 C Ta=25 C
-80 -40 0
I B =-0.2mA
100 50
Ta=-25 C
0 0 -1 -2 -3 -4 -5 -6 -7
30 -0.1
-0.3
-1
-3
-10
-30
-100
-300
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT I C (mA)
VCE(sat) - I C
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (mV) TRANSITION FREQUENCY f T (MHz) -1k -500 -300 3k
COMMON EMITTER I C /I B =10
fT - IC
COMMON EMITTER VCE =-10V Ta=25 C
1k 500 300
-100 -50 -30
Ta =1 00 C
Ta=25 C Ta=-25 C
100 50 30 -0.1 -0.3 -1 -3 -10 -30 -100 -300
-10 -0.1
-0.3
-1
-3
-10
-30
-100
-300
COLLECTOR CURRENT I C (mA)
COLLECTOR CURRENT I C (mA)
I B - V BE
COMMON EMITTER VCE =-6V
Pc - Ta
COLLECTOR POWER DISSIPATION P C (mW) -0.8 -1.0 -1.2 200
-1k BASE CURRENT I B (µA) -300 -100 -30 -10 -3 -1 -0.3 0
150
Ta=2 5C Ta=25 C
Ta=1 00 C
100
50
-0.2
-0.4
-0.6
0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE Ta ( C)
BASE-EMITTER VOLTAGE VBE (V)
2001. 2. 24
Revision No : 2
2/2
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