KTA1520S

SEMICONDUCTOR TECHNICAL DATA HIGH VOLTAGE APPLICATION. KTA1520S EPITAXIAL PLANAR PNP TRANSISTOR L E B L MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range DC Pulse * ) SYMBOL VCBO VCEO VEBO IC ICP IB PC Tj Tstg RATING -120 -100 -5 -1 -2 -200 150 150 -55 150 UNIT V V V A C N P P 2 3 1 DIM A B C D E G H J K L M N P MILLIMETERS _ 2.93 + 0.20 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 A G H mA mW 2. BASE M 1. EMITTER 3. COLLECTOR * Pulse Width = 300 S, Duty Cycle 2%. K SOT-23 Marking Lot No. Type Name KMH ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Cut-Off Current Collector-Emitter Saturation Voltage ** Base-Emitter Saturation Voltage ** Base-Emitter Voltag ) TEST CONDITION IC=-100 A IC=-10mA IE=-100 A VCB=-100V VEB=-4V VCES=-100V IC=-250mA, IB=-25mA IC=-500mA, IB=-50mA IC=-500mA, IB=-50mA VCE=-5V, IC=-1mA VCE=-5V, IC=-1mA VCE=-5V, IC=-250mA VCE=-5V, IC=-500mA VCE=-5V, IC=-1A VCE=-10V, IC=-50mA, f=100MHz VCB=-10V, f=1MHz MIN. -120 -100 -5 100 100 100 50 50 TYP. MAX. -100 -100 -100 -0.2 -0.3 -1.1 -1.0 300 5 MHz pF UNIT V V V nA nA nA V V V SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO ICES VCE(sat) (1) VCE(sat) (2) VBE(sat) VBE hFE(1) hFE(2) hFE(3) hFE(4) fT Cob DC Current Gain ** Transition Frequency Collector Output Capacitance ** Pulse Width = 300 S, Duty Cycle 2%. 2003. 2. 25 Revision No : 1 J D 1/2 KTA1520S VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) -0.4 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) Ta=-25 C VCE(sat) - I C -0.4 I C /I B =10 -0.3 -0.3 -0.2 10 B= -0.2 -0.1 -0.1 Ta=-55 C Ta=25 C Ta=100 C /I 0 -0.001 IC IC /I B= 50 -0.01 -0.1 -1 0 -0.001 -0.01 -0.1 -1 COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A) VBE(sat) - I C -1.2 BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) I C /I B =10 h FE - I C 400 DC CURRENT GAIN h FE Ta=100 C VCE =-5V -1.0 Ta=-55 C 300 Ta=25 C -0.8 Ta=25 C Ta=100 C 200 -0.6 100 Ta=-55 C -0.4 -0.001 -0.003 -0.01 -0.03 -0.1 -0.3 -1 -3 0 -0.001 -0.003 -0.01 -0.03 -0.1 -0.3 -1 -3 COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (mA) I C - VBE -3 COLLECTOR CURRENT I C (A) -1 -0.3 C VCE =-5V -0.1 -0.03 -0.01 -0.003 -0.001 -0.2 -0.4 -0.6 Ta=-55 C 100 Ta= Ta=2 5C -0.8 -1.0 -1.2 BASE-EMITTER VOLTAGE VBE (V) 2003. 2. 25 Revision No : 1 2/2