KTA1552T_06

SEMICONDUCTOR TECHNICAL DATA DC-DC CONVERTERS RELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS, STROBES APPLICATION. KTA1552T EPITAXIAL PLANAR PNP TRANSISTOR E FEATURES Adoption of FBET, MBIT Processes. High Current Capacitance. Low Collector-to-Emitter Saturation Voltage. A G K B DIM A B 2 3 C D MILLIMETERS _ 2.9 + 0.2 1.6+0.2/-0.1 _ 0.70 + 0.05 _ 0.4 + 0.1 2.8+0.2/-0.3 _ 1.9 + 0.2 0.95 _ 0.16 + 0.05 0.00-0.10 0.25+0.25/-0.15 0.60 0.55 D Ultrasmall Package Facilitates Miniaturization in end Products. High Allowable Power Dissipation. Complementary to KTC3552T. C L G High-Speed Switching. 1 E F G H I J K L J CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range DC Pulse SYMBOL VCBO VCES VCEO VEBO IC ICP IB PC * Tj Tstg 0.8 RATING -50 -50 -50 -6 -3 -6 -600 0.9 150 -55 150 ) UNIT V V V A mA W 1. EMITTER 2. BASE 3. COLLECTOR Marking Lot No. Type Name * Package mounted on a ceramic board (600 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Transition Frequency Collector Output Capacitance Turn-On Time Switching Time SYMBOL ICBO IEBO V(BR)CBO V(BR)CES V(BR)CEO V(BR)EBO VCE(sat)1 VCE(sat)2 VBE(sat) hFE fT Cob ton ) TEST CONDITION VCB=-40V, IE=0 VEB=-4V, IC=0 IC=-10 A, IE=0 IC=-100 A, VBE=0 IC=-1mA, IB=0 IE=-10 A, IC=0 IC=-1A, IB=-50mA IC=-2A, IB=-100mA IC=-2A, IB=-100mA VCE=-2V, IC=-100mA VCE=-10V, IC=-500mA VCB=-10V, f=1MHz PW=20µs DC < 1% = INPUT IB1 I B2 RB 50Ω VR 100µF 470µF VCC =-25V RL MIN. -50 -50 -50 -6 200 - OUTPUT Storage Time tstg Fall Time tf V BE =5V -10IB1=10IB2=IC =-1A 2006. 8. 8 Revision No : 1 I MAXIMUM RATING (Ta=25 ) F H J TSM SL TYP. -100 -185 -0.88 360 24 30 MAX. -0.1 -0.1 -200 -500 -1.2 560 MHz pF UNIT A A V V V V mV mV V - 230 - nS - 15 - 1/3 KTA1552T I C - V CE -2.0 COLLECTOR CURRENT I C (A) -1.6 -1.2 -0.8 -2.0mA h FE - I C A -20m A -10m 8.0mA A -6.0m DC CURRENT GAIN h FE mA 30mA -40 - 1K 500 300 Ta=75 C Ta=25 C Ta=-25 C -4.0mA 100 50 30 VCE =-2V -0.4 0 IB=0mA 0 -0.2 -0.4 -0.6 -0.8 -1.0 10 -0.01 -0.03 -0.1 -0.3 -1 -3 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT I C (A) VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (mV) -1K -500 -300 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (mV) I C /I B =20 VCE(sat) - I C -1K -500 -300 C I C /I B =50 -100 -50 -30 75 Ta= C -100 -50 -30 Ta= 25 C 25 =Ta C 5 C 75 =-2 Ta Ta= C 25 Ta= -10 -0.01 -0.03 -0.1 -0.3 -1 -3 -10 -0.01 -0.03 -0.1 -0.3 -1 -3 COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A) VBE(sat) - I C -10K BASE-EMITTER SATURATION VOLTAGE VBE(sat) (mV) -5K -3K COLLECTOR CURRENT IC (A) I C /I B =50 I C - V BE -3.0 VCE =-2V -2.5 -2.0 -1.5 -1.0 -0.5 0 Ta=75 C Ta=25 C Ta=-25 C -1K -500 -300 Ta=-25 C Ta=25 C Ta=75 C -100 -0.01 -0.03 -0.1 -0.3 -1 -3 -10 0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 BASE-EMITTER VOLTAGE V BE (V) COLLECTOR CURRENT I C (A) 2006. 8. 8 Revision No : 1 2/3 KTA1552T f T - IC COLLECTOR OUTPUT CAPACITANCE C ob (pF) TRANSITION FREQUENCY f T (MHz) 1K 500 300 VCE =-10V C ob - V CB 100 50 30 100 50 30 10 5 3 f=1MHz 10 -0.01 1 -0.03 -0.1 -0.3 -1 -3 -1 -3 -10 -30 -100 COLLECTOR CURRENT I C (A) COLLECTOR-BASE VOLTAGE VCB (V) SAFE OPERATING AREA -10 COLLECTOR CURRENT I C (A) -5 -3 -1 -0.5 -0.3 -0.1 -0.05 -0.03 I C MAX.(PULSED) Pc - Ta COLLECTOR POWER DISSIPATION PC (W) 1.0 0.8 0.6 0.4 0.2 0 MOUNTED ON A CERAMIC BOARD (600mm 2 0.8mm) 1m 10 I C MAX (CONTINUOUS) DC OP ER S* 0µ S* 50 S* 0µ 10 AT 0m S* N * mS 10 IO -0.01 -0.1 * SINGLE NONREPETITIVE PULSE Ta=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE MOUNTED ON A CERAMIC BOARD (600mm 2 0.8mm) 0 20 40 60 80 100 120 140 160 -0.3 -1 -3 -10 -30 -100 AMBIENT TEMPERATURE Ta ( C) COLLECTOR-EMITTER VOLTAGE VCE (V) 2006. 8. 8 Revision No : 1 3/3