KTA1659A-Y-U/PF

SEMICONDUCTOR KTA1659/A TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH VOLTAGE APPLICATION. A C S P High Transition Frequency : fT=100MHz(Typ.). Complementary to KTC4370/A. G B E ) SYMBOL RATING L L UNIT R M J CHARACTERISTIC K MAXIMUM RATING (Ta=25 Collector-Base KTA1659 Voltage KTA1659A -180 Collector-Emitter KTA1659 -160 Voltage KTA1659A D -160 VCBO D V N VCEO M N P Q R MILLIMETERS _ 0.3 10.0 + _ 0.3 15.0 + _ 0.3 2.70 + 0.76+0.09/-0.05 _ 0.2 Φ3.2 + _ 0.3 3.0 + _ 0.3 12.0 + 0.5+0.1/-0.05 _ 0.5 13.6 + _ 0.2 3.7 + 1.2+0.25/-0.1 1.5+0.25/-0.1 _ 0.1 2.54 + _ 0.1 6.8 + _ 0.2 4.5 + _ 0.2 2.6 + S 0.5 Typ DIM A B C D E F F FEATURES N H G H J K L V -180 -5 V Collector Current IC -1.5 A Base Current IB -0.15 A Collector Power Dissipation (Tc=25 ) PC 20 W Junction Temperature Tj 150 Tstg -55 150 1 2 3 1. BASE Q VEBO Emitter-Base Voltage 2. COLLECTOR Storage Temperature Range 3. EMITTER TO-220IS ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=-160V, IE=0 - - -1.0 A Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -1.0 A -160 - - V(BR)CEO IC=-10mA, IB=0 -180 - - Collector-Emitter KTA1659 Breakdown Voltage KTA1659A V hFE (Note) VCE=-5V, IC=-100mA 70 - 240 VCE(sat) IC=-500mA, IB=-50mA - - -1.5 V Base-Emitter Voltage VBE VCE=-5V, IC=-500mA - - -1.0 V Transition Frequency fT VCE=-10V, IC=-100mA - 100 - MHz VCB=-10V, IE=0, f=1MHz - 30 - pF DC Current Gain Collector-Emitter Saturation Voltage Cob Collector Output Capacitance Note : hFE Classification 2007. 5. 21 O:70~140, Y:120~240 Revision No : 1 1/3 KTA1659/A h FE - I C I C - V CE 500 COMMON EMITTER Ta=25 C -250 -80 -140 -30 -1.2 -12 -5 -0.8 -3 -2 -0.4 -1 I B =0mA 0 0 -8 -4 -12 -3 -30 -10 -100 -300 -1K -2K COLLECTOR CURRENT I C (mA) h FE - I C VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 300 Ta=100 C 100 Ta=25 C Ta=0 C VCE =-10V 30 VCE =-5V COMMON EMITTER 5 -3 -10 -30 -100 -300 -1.0 COMMON EMITTER Ta=25 C -0.5 - 0.3 0 =1 /I B 5 IC = /I B IC - 0.1 -0.05 -0.03 -5 -1K -2K -30 -10 -100 -300 -1K COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) VCE(sat) - I C I C - V BE -3K -1.6K COMMON EMITTER IC /I B =10 -3.0 -1.0 -0.5 -0.3 Ta 00 =1 C 25 0 -0.1 -0.05 COMMON EMITTER VCE =-5V -1.4K -1.2K -1K 100 C Ta= 25 C Ta=0 C COLLECTOR CURRENT I C (mA) -5.0 -800 Ta= DC CURRENT GAIN h FE 10 COLLECTOR-EMITTER VOLTAGE VCE (V) Tc=25 C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 30 5 50 -600 -400 -200 0 -5 -10 -30 -100 -300 -1K COLLECTOR CURRENT I C (mA) 2007. 5. 21 50 -20 -16 500 10 100 =-10V VCE =-5V VCE -2V E= DC CURRENT GAIN h FE -1.6 COMMON EMITTER Ta=25 C 300 VC COLLECTOR CURRENT I C (mA) -2.0 Revision No : 1 -3K 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 BASE-EMITTER VOLTAGE V BE (V) 2/3 KTA1659/A SAFE OPERATING AREA -5 I E =0 f=1MHz Tc=25 C 30 5 -30 -50 -100 -200 CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE VCEO MAX=-160V KTA1659 VCEO MAX=-180V KTA1659A -0.05 -0.03 COLLECTOR-BASE VOLTAGE VCB (V) ED -10 -0.1 IT -3 -5 -0.3 * M -1 -0.5 LI 1 -0.5 I C MAX (CONTINUOUS) -1 1 50 00 0m ms s * * ER AT * I TH ON LI ER MI MA TE L D OP S/B 3 DC s 1m ms 10 COLLECTOR CURRENT I C (A) 50 * SINGLE NONREPETITIVE PULSE Tc=25 C I C MAX(PULSED) * -3 VCEO MAX. 100 10 COLLECTOR OUTPUT CAPACITANCE C ob (pF) C ob - VCB -0.01 -3 -5 -10 -30 -50 -100 -300 TRANSITION FREQUENCY f T (MHz) fT - IC 500 COMMON EMITTER 300 Tc=25 C V VCE =-5 100 VCE =-2V 50 30 10 -2 -5 -10 -30 -50 -100 COLLECTOR CURRENT I C (mA) 2007. 5. 21 Revision No : 1 -300 -500 COLLECTOR POWER DISSIPATION PC (W) COLLECTOR-EMITTER VOLTAGE VCE (V) Pc - Ta 25 1 Tc=Ta INFINITE HEAT SINK 1 20 2 NO HEAT SINK 15 10 5 2 0 0 20 40 60 80 100 120 140 160 AMBIENT TEMPERATURE Ta ( C) 3/3