KTA1663-Y-RTF/P

SEMICONDUCTOR KTA1663 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. FEATURES A ・1W (Mounted on Ceramic Substrate). C H ・Small Flat Package. G J B E ・Complementary to KTC4375. D K MAXIMUM RATING (Ta=25℃) CHARACTERISTIC DIM A B C D E F G H J K D F SYMBOL RATING UNIT Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage VCEO -30 V Emitter-Base Voltage VEBO -5 V Collector Current IC -1.5 A Base Current IB -0.3 A PC 500 mW PC* 1 W Tj 150 ℃ Tstg -55～150 ℃ Collector Power Dissipation Junction Temperature Storage Temperature Range 1 F 2 3 MILLIMETERS 4.70 MAX _ 0.20 2.50 + 1.70 MAX 0.45+0.15/-0.10 4.25 MAX _ 0.10 1.50 + 0.40 TYP 1.75 MAX 0.75 MIN 0.5+0.10/-0.05 1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER SOT-89 PC* : KTA1663 mounted on ceramic substrate (250mm x0.8t) 2 Marking h FE Rank Lot No. H Type Name ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=-30V, IE=0 - - -100 nA Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -100 nA Collector-Emitter Breakdown Voltage V(BR)CEO IC=-10mA, IB=0 -30 - - V Emitter-Base Breakdown Voltage V(BR)EBO IE=-1mA, IC=0 -5.0 - - V DC Current Gain hFE (Note) VCE=-2V, IC=-500mA 100 - 320 VCE(sat) IC=-1.5A, IB=-0.03A - - -2.0 V Base-Emitter Voltage VBE VCE=-2V, IC=-500mA - - -1.0 V Transition Frequency fT VCE=-2V, IC=-500mA - 120 - MHz VCB=-10V, IE=0, f=1MHz - - 50 pF Collector-Emitter Saturation Voltage Cob Collector Output Capacitance Note : hFE Classification 2002. 5. 14 O:100～200, Y:160～320 Revision No : 3 1/2 KTA1663 h FE - I C I C - V CE -1.2 -1 -6mA DC CURRENT GAIN h FE Ta=25 C -4mA -0.8 -3mA -2mA -0.4 IB =-1mA 500 Ta=100 C 300 Ta=25 C Ta=-25 C 100 50 30 COMMON EMITTER VCE =-2V 0mA 10 0 -4 0 -8 -12 -1 -16 -3 -10 -0.1 Ta=100 C Ta=25 C Ta=-25 C -0.01 -10 -30 -100 -300 -1k -1.2 -0.8 -0.4 0 -3k 0 -0.4 DC OP ER A -100 -50 -30 -10 -5 -0.1 10 0m s TI ON 1s SINGLE NONREPETITIVE PULSE Ta=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE -0.3 -1 -3 -10 -30 -100 COLLECTOR-EMITTER VOLTAGE V CE (V) 2002. 5. 14 Revision No : 3 COLLECTOR POWER DISSIPATION PC (W) (CONTINUOUS) s 1m -1k -500 -300 -1.2 -1.6 Pc - Ta IC MAX(PULSE) ms 10 COLLECTOR CURRENT I C (mA) SAFE OPERATING AREA IC MAX -0.8 BASE-EMITTER VOLTAGE V BE (V) COLLECTOR CURRENT I C (mA) -3k -3k COMMON EMITTER V CE =-2V Ta=100 C Ta=25 C -0.5 -0.3 -3 -1k -1.8 COMMON EMITTER I B /I C =50 COLLECTOR CURRENT I C (A) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) -3 -1 -300 I C - V BE VCE(sat) - I C -0.05 -0.03 -100 COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER VOLTAGE V CE (V) -1 -30 Ta=-25 C COLLECTOR CURRENT I C (mA) 1k COMMON EMITTER A -8m A 0m 1.2 1 MOUNTED ON CERAMIC SUBSTRATE(250mm 2 x0.8t) 2 Ta=25 C 1 1.0 0.8 0.6 2 0.4 0.2 0 0 20 40 60 80 100 120 140 160 AMBIENT TEMPERATURE Ta ( C) 2/2