KTA1668-Y-RTF/P

SEMICONDUCTOR KTA1668 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR VOLTAGE REGULATOR, RELAY, LAMP DRIVER, INDUSTRIAL USE A FEATURES C H High Voltage : VCEO=-60V(Min.). G J B E High Current : IC(Max.)=-1A. High Transition Frequency : fT=150MHz (Typ.). DIM A B C D E F G H J K Wide Area of Safe Operation. D D Complementary to KTC4378. K F 1 MAXIMUM RATING (Ta=25 F 2 3 ) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO -80 V Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage VEBO -5 V DC IC -1 Pulse ICP -2 PC 500 mW PC * 1 W Tj 150 Collector Current Collector Power Dissipation Junction Temperature 1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER A Tstg Storage Temperature Range -55 150 SOT-89 Marking 2 PC* : Package mounted on ceramic substrate (250mm x0.8t) h FE Rank ELECTRICAL CHARACTERISTICS (Ta=25 Lot No. J Type Name CHARACTERISTIC MILLIMETERS 4.70 MAX _ 0.20 2.50 + 1.70 MAX 0.45+0.15/-0.10 4.25 MAX _ 0.10 1.50 + 0.40 TYP 1.75 MAX 0.75 MIN 0.5+0.10/-0.05 ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=-50V, IE=0 - - -100 nA Emitter Cut-off Current IEBO VEB=-4V, IC=0 - - -100 nA DC Current Gain hFE(1) VCE=-2V, IC=-50mA 120 - 200 hFE(2) VCE=-2V, IC=-1A 30 - - IC=-1mA, IB=0 -60 - - V Collector-Emitter Breakdown Voltage V(BR)CEO Collector-Emitter Saturation Voltage VCE(sat) IC=-500mA, IB=-50mA - -0.2 -0.7 V Base-Emitter Saturation Voltage VBE(sat) IC=-500mA, IB=-50mA - -0.85 -1.2 V fT VCE=-10V, IC=-50mA - 150 - MHz VCB=-10V, f=1MHz - 12 - pF Transition Frequency Collector Output Capacitance Note : hFE(1) Classification O:60 120, Y:120 1999. 12. 22 Revision No : 2 Cob 200 1/3 KTA1668 1999. 12. 22 Revision No : 2 2/3 KTA1668 1PULSE I CP I C MAX. DC 1s ec OP ER AT IO -0.1 N c se 0m 10 -0.5 -0.3 ec -1 COLLECTOR POWER DISSIPATION P C (mW) -5 -3 P C - Ta ms 10 c se 1m COLLECTOR CURRENT I C (A) SAFE OPERATING AREA -0.05 -0.03 -0.01 -0.005 -0.5 -1 -3 -5 -10 -30 -50 -100 COLLECTOR-EMITTER VOLTAGE VCE (V) 1999. 12. 22 Revision No : 2 1.2k (1) (1) 1k (2) Mounted on ceramic substrate (250mm 0.8t) Ta=25 C 800 600 (2) 400 200 0 0 20 40 60 80 100 120 140 160 AMBIENT TEMPERATURE Ta ( C) 3/3