KTA1715_03

SEMICONDUCTOR TECHNICAL DATA POWER AMPLIFIER APPLICATION. POWER SWITCHING APPLICATION. C KTA1715 EPITAXIAL PLANAR PNP TRANSISTOR A B E F G D FEATURES Low Collector Saturation Voltage : VCE(sat)=-0.5V(Max.) (IC=-1A) High Speed Switching Time : tstg=1 S(Typ.) Complementary to KTC2814. H J K L MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range Ta=25 Tc=25 ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg RATING -50 -50 -5 -2 1.5 10 150 -55 150 UNIT V V V A W 1. EMITTER 2. COLLECTOR 3. BASE N M O 1 2 3 P DIM A B C D E F G H J K L M N O P MILLIMETERS 8.3 MAX 5.8 0.7 _ Φ3.2 + 0.1 3.5 _ 11.0 + 0.3 2.9 MAX 1.0 MAX 1.9 MAX _ 0.75 + 0.15 _ 15.50 + 0.5 _ 2.3 + 0.1 _ 0.65 + 0.15 1.6 3.4 MAX TO-126 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Turn On Time Switching Time Storage Time Fall Time Note : hFE(1) Classification ICBO IEBO V(BR)CEO ) TEST CONDITION VCB=-50V, IE=0 VEB=-5V, IC=0 IC=-10mA, IB=0 VCE=-2V, IC=-0.5A VCE=-2V, IC=-1.5A IC=-1A, IB=-0.05A IC=-1A, IB=-0.05A VCE=-2V, IC=-0.5A VCB=-10V, IE=0, f=1MHz 20µs IB2 IB1 INPUT OUTPUT I B2 30Ω I B1 -I B1=IB2=0.05A DUTY CYCLE < 1% = VCC =-30V SYMBOL MIN. -50 70 40 - TYP. 100 30 0.1 1.0 0.1 MAX. -0.1 -0.1 240 -0.5 -1.2 - UNIT A A V hFE (1) (Note) hFE (2) VCE(sat) VBE(sat) fT Cob ton tstg tf 240 V V MHz pF S O:70 140, Y:120 2003. 7. 24 Revision No : 3 1/3 KTA1715 STATIC CHARACTERISTICS COLLECTOR CURRENT I C (A) -2.0 -1.6 -1.2 -0.8 -0.4 0 BASE-EMITTER VOLTAGE V BE (V) -0.4 -0.8 -1.2 -30 -20 -10 BASE CURRENT I B (mA) COMMON EMITTER Ta=25 C I B =-2mA 0 VC E VCE - I C -18 -15 -12 -10 -8 -6 -4 -25 -20 COLLECTOR-EMITTER VOLTAGE VCE (V) -1.2 -1.0 -10 COMMON EMITTER Ta=25 C IB =-5mA -0.6 -0.4 -0.2 0 0 -0.4 -0.8 -1.2 -1.6 -1 20 -80 -0.8 -20 -40 =2V 0 -16 -200 -2.0 -2.4 -2.8 0 -2 -4 -6 -8 COLLECTOR EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT I C (A) VCE - I C COLLECTOR-EMITTER VOLTAGE V CE (V) -1.0 A VCE - I C COLLECTOR-EMITTER VOLTAGE V CE (V) -1.2 -1.0 -20 -1.2 COMMON EMITTER Ta=100 C -20 -5m COMMON EMITTER Ta=-55 C -30 -40 IB = -0.8 -0.6 -0.4 -0.2 0 -60 -80 -1 20 -0.8 I B =-5mA -60 -30 0 -16 0 18 -200 -40 -0.6 -0.4 -0.2 0 0 -16 -200 0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8 0 -0.4 -0.8 -1.2 -1.6 -2.0 -1 20 -80 -2.4 -2.8 COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A) h FE - I C 1k DC CURRENT GAIN hFE 500 300 Ta=100 C Ta=25 C COMMON EMITTER VCE =-2V 100 50 30 Ta=-55 C 10 -0.01 -0.03 -0.1 -0.3 -1 -3 COLLECTOR CURRENT I C (A) 2003. 7. 24 Revision No : 3 2/3 KTA1715 VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) -1 -0.5 -0.3 BASE-TMITTER SATURATION VOLTAGE VBE(sat) (V) COMMON EMITTER I C /I B =20 VBE(sat) - I C -1 -0.5 -0.3 COMMON EMITTER I C /IB =20 -0.1 -0.05 -0.03 Ta= 100 C -0.1 -0.05 -0.03 Ta=-55 C Ta=25 C Ta=-55 C Ta=25 C Ta=100 C -0.01 -0.001 -0.03 -0.1 -0.3 -1 -3 -0.01 -0.001 -0.03 -0.1 -0.3 -1 -3 COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A) I C - VBE COLLECTOR CURRENT I C (A) COMMON EMITTER VCE =-2V SAFE OPERATING AREA COLLECTOR CURRENT I C (A) -5 I MAX.(PULSED) * -3 C -1 -0.5 -0.3 -0.1 -0.05 -0.03 10 IC MAX.(CONTINUOUS) m 10 S 1s 0m * DC S * OP * ER AT IO N Ta =2 5 C * SINGLE NONREPETITIVE PULSE Ta=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE -2.0 S 1m -1.5 Ta=100 C * -1.0 Ta=25 C Ta=-55 C -0.5 0 0 -0.4 -0.8 -1.2 -1.6 -2.0 -0.01 -0.2 -0.5 -1 -3 -10 -30 BASE-EMITTER VOLTAGE V BE (V) COLLECTOR-EMITTER VOLTAGE VCE (V) Pc - Ta COLLECTOR POWER DISSIPATION PC (W) 12 10 8 6 4 2 0 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta ( C) 2003. 7. 24 Revision No : 3 VCEO MAX. -100 3/3