KTA711T

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. KTA711T EPITAXIAL PLANAR PNP TRANSISTOR E FEATURES Excellent hFE Linearity : hFE(2)=25(Min.) at VCE=-6V, IC=-400mA. G A F K 1 B K 6 Complementary to KTC811T. 2 5 DIM A B C D E D F G H I 3 4 MILLIMETERS _ 2.9 + 0.2 1.6+0.2/-0.1 _ 0.70 + 0.05 _ 0.4 + 0.1 2.8+0.2/-0.3 _ 1.9 + 0.2 0.95 _ 0.16 + 0.05 0.00-0.10 0.25+0.25/-0.15 0.60 0.55 G MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range ) C J SYMBOL VCBO VCEO VEBO IC IE PC * Tj Tstg 0.8 ) RATING -35 -30 -5 -500 500 0.9 150 -55 150 UNIT V V V mA mA W K L J J H I L 1. Q 1 2. Q 1 3. Q 2 4. Q 2 5. Q 2 6. Q 1 EMITTER BASE COLLECTOR EMITTER BASE COLLECTOR TS6 EQUIVALENT CIRCUIT (TOP VIEW) 6 5 4 * Package mounted on a ceramic board (600 Q1 Q2 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance Note : hFE(1) Classification hFE(2) Classification 0:70 140, 0:25Min., Y:120 ) TEST CONDITION VCB=-35V, IE=0 VEB=-5V, IC=0 VCE=-1V, IC=-100mA VCE=-6V, IC=-400mA IC=-100mA, IB=-10mA VCE=-1V, IC=-100mA VCE=-6V, IC=-20mA VCB=-6V, IE=0, f=1MHz ICBO IEBO 70 25 - 1 2 3 SYMBOL MIN. TYP. -0.1 -0.8 200 13 MAX. -0.1 -0.1 240 -0.25 -1.0 - UNIT A A hFE(1) (Note) hFE(2) (Note) VCE(sat) VBE fT Cob 240 Y:40Min. V V MHz pF Marking h FE Rank Type Name 6 5 4 Lot No. S 1 2 3 2001. 6. 27 Revision No : 0 1/2 KTA711T I C - VCE -600 COLLECTOR CURRENT I C (mA) -500 -400 -300 -200 -100 0 0 -1 -2 -3 0 -8 -7 -6 -5 COMMON EMITTER Ta=25 C -4 -3 -2 I B =-1mA h FE - I C 1k 500 DC CURRENT GAIN h FE 300 Ta=100 C Ta=25 C VCE =-6V COMMON EMITTER 100 50 30 Ta=-25 C VCE =-1V -4 -5 10 -0.3 -1 -3 -10 -30 -100 -300 -1k COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT I C (mA) V CE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) -3 -1 -0.5 -0.3 -0.1 -0.05 -0.03 -0.01 -0.5 -1 -3 -10 -30 -100 -300 -1k Ta=100 C Ta=25 C Ta=-25 C COMMON EMITTER I C /I B =10 I B - VBE -3k BASE CURRENT I B (µA) -1k -300 -100 -30 -10 -3 -1 -0.3 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 COMMON EMITTER VCE =-6V C Ta=1 00 5C 25 C Ta=- COLLECTOR CURRENT I C (mA) BASE-EMITTER VOLTAGE VBE (V) Pc - Ta COLLECTOR POWER DISSIPATION PC (W) 1.2 MOUNTED ON A 1.0 0.8 0.6 0.4 0.2 0 CERAMIC BOARD (600mm 2 0.8mm) 0 20 40 60 80 100 120 140 160 AMBIENT TEMPERATURE Ta ( C) 2001. 6. 27 Revision No : 0 Ta=2 2/2