KTB1124

SEMICONDUCTOR TECHNICAL DATA VOLTAGE REGULATORS, RELAY DRIVERS LAMP DRIVERS, ELECTRICAL EQUIPMENT FEATURES Adoption of MBIT processes. Low collector-to-emitter saturation voltage. Fast switching speed. Large current capacity and wide ASO. Complementary to KTD1624. D K F F D A H KTB1124 EPITAXIAL PLANAR PNP TRANSISTOR C G J B E MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Vollector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current(Pulse) Collector Power Dissipation Junction Temperature Storage Temperature Range ) SYMBOL VCBO VCEO VEBO IC ICP PC PC* Tj Tstg RATING -60 -50 -6 -3 -6 500 1 150 -55 0.8t) 150 UNIT V V V A A mW W 1 2 3 DIM A B C D E F G H J K MILLIMETERS 4.70 MAX _ 2.50 + 0.20 1.70 MAX 0.45+0.15/-0.10 4.25 MAX _ 1.50 + 0.10 0.40 TYP 1.75 MAX 0.75 MIN 0.5+0.10/-0.05 1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER SOT-89 Marking h FE Rank Lot No. * : Package mounted on ceramic substrate(250mm2 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Turn-on Time Switching Time ICBO IEBO ) TEST CONDITION VCB=-40V, IE=0 VEB=-4V, IC=0 VCE=-2V, IC=-100 VCE=-2V, IC=-3A IC=-2A, IB=-100 IC=-2A, IB=-100 VCE=-10V, IC=-50 VCB=-10V, f=1 PW=20µs DC < 1% = INPUT VR I B1 R8 IB2 25 SYMBOL MIN. 100 35 - X TYP. -0.35 -0.94 150 39 70 MAX. -1 -1 400 -0.7 -1.2 V V Type Name UNIT. hFE(1) (Note) hFE (2) VCE(sat) VBE(sat) fT Cob ton Storage Time tstg 50 100Ω 470Ω -25V - 450 - nS Fall Time tf 400 5V -10IB1=10IB2 =I C =1A - 35 - Note : hFE (1) Classification A:100 200, B:140 280, C:200 2001. 12. 6 Revision No : 3 1/3 KTB1124 I C - V CE -5.0 COLLECOTR CURRENT I C (A) -4.5 -4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0 0 -0.4 -0.8 -1.2 -1.6 COLLECTOR CURRENT I C (A) -200mA -100mA -50mA I C - V BE -3.2 -2.8 -2.4 -2.0 Ta=7 5C 25 C -25 C VCE =-2V -20mA -10mA -5mA IB =0 -1.6 -1.2 -0.8 -0.4 0 0 -0.2 -0.4 -0.6 -2.0 -0.8 -1.0 -1.2 COLLECTOR-EMITTER VOLTAGE VCE (V) BASE EMITTER VOLTAGE VBE (V) I C - V CE -2.0 COLLECTOR CURRENT I C (A) -1.8 -1.6 -1.4 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0 0 -2 -4 -6 -8 -10 IB =0 -2mA -14mA -12mA -10mA -8mA -6mA -4mA h FE - I C 1k DC CURRENT GAIN h FE 500 300 Ta=75 C Ta=25 C Ta=-25 C VCE =-2V 100 50 30 -12 -14 -16 -18 -20 10 -0.01 -0.03 -0.1 -0.3 -1 -3 -10 COLLECTOR EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT I C (A) VCE(sat) - I C COLLECTOR EMITTER SATURATION VOLTAGE VCE(sat) (mV) -1K -500 -300 Ta=-25 C Ta=25 C V BE(sat) - I C -10 BASE-EMITTER SATURATION VOLTAGE V BE(sat) (V) -5 -3 I C /I B=20 IC /I B =20 -100 -50 -30 Ta=75 C -1 -0.5 -0.3 Ta=25 C Ta=-25 C Ta=75 C -10 -0.01 -0.03 -0.1 -0.3 -1 -3 -10 -0.1 -0.01 -0.03 -0.1 -0.3 -1 -3 -10 COLLECTOR CURRENT I C (A) COLLECTOR CURRENT IC (A) 2001. 12. 6 Revision No : 3 2/3 KTB1124 fT - IC GAIN-BANDWIDTH PRODUCT f T (MHz) 500 300 OUTPUT CAPACITANCE Cob (pF) 1k VCE =10V C ob - VCB 100 50 30 f=1MHz 100 50 30 10 5 3 10 -0.01 -0.03 -0.1 -0.3 -1 -3 -10 1 -0.1 -0.3 -1 -3 -10 -30 -100 COLLECTOR CURRENT I C (A) COLLECTOR BASE VOLTAGE VCB (V) COLLECTOR POWER DISSIPATION PC (W) P C - Ta 1.2 1.0 0.8 0.6 0.4 0.2 0 2 1 1 MOUNTED ON CERAMIC SAFE OPERATING AREA -10 -5 COLLECTOR CURRENT I C (A) -3 -1 -0.5 -0.3 -0.1 -0.05 -0.03 MOUNTED ON CERAMIC BOARD (250mm 2 x0.8t) Ta=25 C ONE PULSE I CP 10 SUBSTRATE (250mm 2 x0.8t) 2 Ta=25 C s 1m s m 10 s 0m I C MAX. D C O pe ra tio n 0 20 40 60 80 100 120 140 160 AMBIENT TEMPERATURE Ta ( C) -0.02 -0.1 -0.3 -1 -3 -10 -30 -100 COLLECTOR EMITTER VOLTAGE V CE (V) 2001. 12. 6 Revision No : 3 3/3