KTB1124_08

SEMICONDUCTOR TECHNICAL DATA VOLTAGE REGULATORS, RELAY DRIVERS LAMP DRIVERS, ELECTRICAL EQUIPMENT FEATURES Adoption of MBIT processes. Low collector-to-emitter saturation voltage. Fast switching speed. Large current capacity and wide ASO. Complementary to KTD1624. KTB1124 EPITAXIAL PLANAR PNP TRANSISTOR MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Vollector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current(Pulse) Base Current Collector Power Dissipation ) SYMBOL VCBO VCEO VEBO IC ICP IB PC PC* RATING -60 -50 -6 -3 -6 -600 500 1 150 -55 2 UNIT V V V A A mA mW W Junction Temperature Storage Temperature Range Tj Tstg 150 * : Package mounted on ceramic substrate(250mm 0.8t) ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain hFE (2) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Turn-on Time Switching Time VCE(sat) VBE(sat) fT Cob ton VCE=-2V, IC=-3A IC=-2A, IB=-100 IC=-2A, IB=-100 VCE=-10V, IC=-50 VCB=-10V, f=1 35 -0.35 -0.94 150 39 70 -0.7 -1.2 V V SYMBOL ICBO IEBO hFE(1) (Note) TEST CONDITION VCB=-40V, IE=0 VEB=-4V, IC=0 VCE=-2V, IC=-100 MIN. 100 TYP. MAX. -1 -1 400 UNIT. Storage Time tstg - 450 - nS Fall Time tf - 35 - Note : hFE (1) Classification A:100 200, B:140 280, C:200 400 2008. 3. 11 Revision No : 4 1/3 KTB1124 2008. 3. 11 Revision No : 4 2/3 KTB1124 2008. 3. 11 Revision No : 4 3/3