KTB1423

SEMICONDUCTOR TECHNICAL DATA SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS. S KTB1423 EPITAXIAL PLANAR PNP TRANSISTOR A C FEATURES High DC Current Gain : hFE=1000(Min.) at VCE=-3V, IC=-3A. High Collector Breakdown Voltage : VCEO=-120V (Min.) Complementary to KTD1413. E DIM A B C D E F G H J K L M N P Q R H S K L L R M D D MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage DC Collector Current Pules Base Current Collector Power Dissipation (Tc=25 ) ) SYMBOL VCBO VCEO VEB0 IC ICP IB PC Tj Tstg RATING -120 -120 -5 -5 A -8 UNIT V V V 1 2 3 N N MILLIMETERS _ 10.0 + 0.3 _ 15.0 + 0.3 _ 2.70 + 0.3 0.76+0.09/-0.05 _ Φ3.2 + 0.2 _ 3.0 + 0.3 _ 12.0 + 0.3 0.5+0.1/-0.05 _ 13.6 + 0.5 _ 3.7 + 0.2 1.2+0.25/-0.1 1.5+0.25/-0.1 _ 2.54 + 0.1 _ 6.8 + 0.1 _ 4.5 + 0.2 _ 2.6 + 0.2 0.5 Typ F G J Q B 1. BASE 2. COLLECTOR 3. EMITTER TO-220IS -0.12 30 150 -55 150 B A W Junction Temperature Storage Temperature Range EQUIVALENT CIRCUIT C P R1 ∼ = 8kΩ R2 ∼ = 120Ω E ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain ) TEST CONDITION VCB=-100V, IE=0 VBE=-5V, IC=0 IC=-10mA, IB=0 VCE=-3V, IC=-0.5A VCE=-3V, IC=-3A IC=-3A, IB=-12mA IC=-5A, IB=-20mA VCE=-3V, IC=-3A VCB=-10V, IE=0, f=1MHz MIN. -120 1000 1000 TYP. MAX. -1 -2 -2 V -4 -2.5 300 V pF UNIT mA mA V SYMBOL ICBO IEBO V(BR)CEO hFE(1) hFE(2) VCE(sat) 1 Collector-Emitter Saturation Voltage VCE(sat) 2 Base-Emitter Voltage Output Capacitance VBE Cob 2007. 5. 21 Revision No : 2 1/2 KTB1423 h FE - I C 10k VCE =-3V V CE(sat) , V BE(sat), - I C -3.5 SATURATION VOLTAGE VCE(sat) , V BE(sat) (V) -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 -0.1 VBE(sat) VCE(sat) I C /I B =250 DC CURRENT GAIN h FE 5k 3k 1k 500 300 100 -0.1 -0.3 -1 -3 -10 -0.3 -1 -3 -10 -20 COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A) SAFE OPERATING AREA C ob , C ib - V CB , V EB 1k CAPACITANCE C ob(pF) , C ib(pF) COLLECTOR CURRENT I C (A) f=1MHz -20 -10 -5 -3 -1 -0.5 -0.3 -0.1 -0.05 -0.03 -0.01 -1 -3 -10 -30 -100 -300 COLLECTOR-EMITTER VOLTAGE VCE (V) * SINGLE NONREPETITIVE PULSE Tc=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE I C MAX.(PULSED) I C MAX. * 100µS * 500 300 (CONTINUOUS) DC OPERATION Tc=25 C 1mS * 10mS * 100 50 30 C ib C ob 10 -0.1 -0.3 -1 -3 -10 -30 -100 COLLECTOR-BASE VOLTAGE VCB (V) EMITTER-BASE VOLTAGE VEB (V) R th(t) - t w TRANSIENT THERMAL RESISTANCE R th(t) ( C/W) 1 Ta=25 C NO HEAT SINK 2 Tc=25 C INFINITE HEAT SINK 1 Pc - Ta COLLECTOR POWER DISSIPATION P C (W) 35 1 100 30 10 30 25 20 15 10 5 0 0 25 50 2 Tc=Ta INFINITE HEAT SINK 2 NO HEAT SINK 1 2 3 1 0.3 0.1 10 -3 -2 -1 0 1 2 10 10 10 10 10 75 100 125 VCEO MAX. 150 175 PULSE WIDTH t w (S) AMBIENT TEMPERATURE Ta ( C) 2007. 5. 21 Revision No : 2 2/2