KTB1424_07

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE DARLINGTON TRANSISTOR. FEATURES High DC Current Gain : hFE=3000(Min.) (VCE=-2V, IC=-1A) Complementary to KTD2424. S E A KTB1424 EPITAXIAL PLANAR PNP TRANSISTOR C DIM A B C D E F G H J K L M N P Q R H S K MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current ) SYMBOL VCBO VCEO VEBO IC IB ) PC Tj Tstg RATING -80 -60 -10 -3 -0.5 25 150 -55 150 UNIT V V L L R M D D MILLIMETERS _ 10.0 + 0.3 _ 15.0 + 0.3 _ 2.70 + 0.3 0.76+0.09/-0.05 _ Φ3.2 + 0.2 _ 3.0 + 0.3 _ 12.0 + 0.3 0.5+0.1/-0.05 _ 13.6 + 0.5 _ 3.7 + 0.2 1.2+0.25/-0.1 1.5+0.25/-0.1 _ 2.54 + 0.1 _ 6.8 + 0.1 _ 4.5 + 0.2 _ 2.6 + 0.2 0.5 Typ F G N N V A A W 1 2 3 J Q B 1. BASE 2. COLLECTOR Collector Power Dissipation (Tc=25 Junction Temperature Storage Temperature Range 3. EMITTER TO-220IS ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain ) TEST CONDITION VCB=-80V, IE=0 VEB=-10V, IC=0 IC=-10mA, IB=0 VCE=-2V, IC=-1A VCE=-2V, IC=-3A IC=-3A, IB=-30mA IC=-3A, IB=-30mA MIN. -60 3000 1000 TYP. MAX. -20 -100 -1.5 V -2.8 UNIT A A V SYMBOL ICBO IEBO V(BR)CEO hFE(1) hFE(2) Collector-Emitter Saturation Voltage Base-Emitter VCE(sat) VBE(sat) 2007. 5. 21 Revision No : 2 P 1/1