KTB1424_07

KTB1424_07

  • 厂商:

    KEC

  • 封装:

  • 描述:

    KTB1424_07 - EPITAXIAL PLANAR PNP TRANSISTOR - KEC(Korea Electronics)

  • 详情介绍
  • 数据手册
  • 价格&库存
KTB1424_07 数据手册
SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE DARLINGTON TRANSISTOR. FEATURES High DC Current Gain : hFE=3000(Min.) (VCE=-2V, IC=-1A) Complementary to KTD2424. S E A KTB1424 EPITAXIAL PLANAR PNP TRANSISTOR C DIM A B C D E F G H J K L M N P Q R H S K MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current ) SYMBOL VCBO VCEO VEBO IC IB ) PC Tj Tstg RATING -80 -60 -10 -3 -0.5 25 150 -55 150 UNIT V V L L R M D D MILLIMETERS _ 10.0 + 0.3 _ 15.0 + 0.3 _ 2.70 + 0.3 0.76+0.09/-0.05 _ Φ3.2 + 0.2 _ 3.0 + 0.3 _ 12.0 + 0.3 0.5+0.1/-0.05 _ 13.6 + 0.5 _ 3.7 + 0.2 1.2+0.25/-0.1 1.5+0.25/-0.1 _ 2.54 + 0.1 _ 6.8 + 0.1 _ 4.5 + 0.2 _ 2.6 + 0.2 0.5 Typ F G N N V A A W 1 2 3 J Q B 1. BASE 2. COLLECTOR Collector Power Dissipation (Tc=25 Junction Temperature Storage Temperature Range 3. EMITTER TO-220IS ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain ) TEST CONDITION VCB=-80V, IE=0 VEB=-10V, IC=0 IC=-10mA, IB=0 VCE=-2V, IC=-1A VCE=-2V, IC=-3A IC=-3A, IB=-30mA IC=-3A, IB=-30mA MIN. -60 3000 1000 TYP. MAX. -20 -100 -1.5 V -2.8 UNIT A A V SYMBOL ICBO IEBO V(BR)CEO hFE(1) hFE(2) Collector-Emitter Saturation Voltage Base-Emitter VCE(sat) VBE(sat) 2007. 5. 21 Revision No : 2 P 1/1
KTB1424_07
1. 物料型号:KTB1424

2. 器件简介:KTB1424是一种通用目的达林顿PNP晶体管,具有高直流电流增益(最小值为3000),并且与KTD2424互补。

3. 引脚分配:该晶体管有三个引脚,分别为: - 1. BASE(基极) - 2. COLLECTOR(集电极) - 3. EMITTER(发射极)

4. 参数特性: - 最大额定值(Ta=25°C): - 集电极-基极电压(VCBO):-80V - 集电极-发射极电压(VCEO):-60V - 发射极-基极电压(VEBO):-10V - 集电极电流(Ic):-3A - 基极电流(IB):-0.5A - 集电极功耗(Pc):25W - 结温(Tj):150°C - 存储温度范围(Tstg):-55~150°C

5. 功能详解: - 电气特性(Ta=25°C): - 集电极截止电流(ICBO):-20μA - 发射极截止电流(IEBO):-100μA - 集电极-发射极击穿电压(V(BR)CEO):-60V - 直流电流增益(hFE): - hFE(1):VcE=-2V, Ic=-1A时,最小值为3000 - hFE(2):VCE=-2V, Ic=-3A时,最小值为1000 - 饱和电压: - 集电极-发射极饱和电压(VCE(st)):-1.5V - 基极-发射极饱和电压(VBE(st)):-2.8V

6. 应用信息:KTB1424适用于需要高直流电流增益和高功率处理能力的应用场合。

7. 封装信息:该晶体管采用TO-220IS封装。
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