KTB631K-Y-U/PH

SEMICONDUCTOR KTB631K TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW FREQUENCY POWER AMP, MEDIUM SPEED SWITCHING APPLICATIONS A B D C E FEATURES F High breakdown voltage VCEO 120V, high current 1A. Low saturation voltage and good linearity of hFE. G H DIM A B C D E F G H J K L M N O P J MAXIMUM RATING (Ta=25 K ) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO -120 V Collector-Emitter Voltage VCEO -120 V Emitter-Base Voltage VEBO -5 V IC -1 ICP -2 Collector Current Collector Power Ta=25 Dissipation Tc=25 Junction Temperature Storage Temperature Range 1.5 PC 8 Tj 150 Tstg -55 150 L M O N 1 2 P 3 1. EMITTER 2. COLLECTOR 3. BASE A W MILLIMETERS 8.3 MAX 5.8 0.7 _ 0.1 Φ3.2 + 3.5 _ 0.3 11.0 + 2.9 MAX 1.0 MAX 1.9 MAX _ 0.15 0.75 + _ 0.5 15.50 + _ 0.1 2.3 + _ 0.15 0.65 + 1.6 3.4 MAX TO-126 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut of Current ICBO VCB=-50V, IE=0 - - -1 A Emitter Cut of Current IEBO VEB=-4V, IC=0 - - -1 A Collector-Base Breakdown Voltage V(BR)CBO IC=-10 A -120 - - V Collector-Emitter Breakdown Voltage V(BR)CEO IC=-1mA -120 - - V Emitter-Base Breakdown Voltage V(BR)EBO IE=-10 A -5 - - V DC Current Gain Gain Bandwidth Product hFE(1) Note VCE=-5V, IC=-50mA 100 - 320 hFE(2) VCE=-5V, IC=-500mA 20 - - fT VCE=-10V, IC=-50mA - 110 - MHz VCB=-10V, f=1MHz - 30 - pF Cob Output Capacitance Collector-Emitter Saturation Voltage VCE(sat) IC=-500mA, IB=-50mA - -0.15 -0.4 V Base-Emitter Saturation Voltage VBE(sat) IC=-500mA, IB=-50mA - -0.85 -1.2 V - 80 - - 100 - - 600 - Switching Time Turn-on Time ton Turn-off Time toff 1Ω 20µsec I B2 I B1 24Ω 100Ω 1uF Storage Time Note : hFE(1) Classification 2003. 7. 24 tstg 2V VCE =-12V I C =10I B1 =-10I B2 =50mA nS 1uF -12V Y:100 200, GR:160 320 Revision No : 2 1/2 KTB631K VCE(sat) - I C COLLECTOR CURRENT I C (A) -1.6 Tc=25 C -1.4 -20 -1.2 -15 -1.0 -12 -0.8 -8 -10 -6 -0.6 -4 -0.4 -2 -0.2 I B =0mA 0 0 -1 -2 -3 -4 -5 -6 COLLECTOR EMITTER SATURATION VOLTAGE VCE(sat) (V) VCE - I C -1.0 I C /I B =10 -0.5 -0.3 -0.1 -0.05 -0.03 -0.01 -1 -3 COLLECTOR-EMITTER VOLTAGE VCE (V) -1k -3k -0.8 Pc - Ta -0.6 -0.4 -0.2 0 0 -0.2 -0.4 -0.6 -0.8 -1.0 BASE-EMITTER VOLTAGE V BE (V) -1.2 200 f=1MHz 100 COLLECTOR DISSIPATION PC (W) COLLECTOR CURRENT I C (A) OUTPUT CAPACITANCE C ob (pF) -300 -1.0 50 10 8 inf ini te he at sin k 6 4 2 0 30 No Heat Sink 0 20 40 60 80 100 120 140 160 AMBIENT TEMPERATURE Ta ( C) 10 5 5 -1 -3 -10 -30 -100 COLLECTOR-BASE VOLTAGE V CE (V) ASO 500 COLLECTOR CURRENT I C (A) h FE - I C DC CURRENT GAIN h FE -100 VCE =-5V -1.2 C ob - V CB VCE =-5V 300 100 50 30 10 -1 -3 -10 -30 -100 -300 -1k COLLECTOR CURRENT I C (mA) 2003. 7. 24 -30 COLLECTOR CURRENT I C (mA) VBE - I C -1.4 -10 Revision No : 2 -5k 5 3 10mS 1mS 1 100µS 0.5 0.3 DC 0.1 0.05 0.03 0.01 0.005 1 10 100 COLLECTOR-EMITTER VOLTAGE VCE (V) 2/2