KTB764-Y-AT/P

SEMICONDUCTOR TECHNICAL DATA KTB764 TRIPLE DIFFUSED PNP TRANSISTOR VOLTAGE REGULATOR, RELAY, LAMP DRIVER, INDUSTRIAL USE B D A FEATURES High Voltage : VCEO=-50V(Min.). P DEPTH:0.2 High Current : IC(Max.)=-1A. C Q Wide Area of Safe Operation. J K R Complementary to KTD863. SYMBOL RATING UNIT Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -5 V DC IC -1 Pulse ICP -2 Collector Power Dissipation PC 1 Junction Temperature Tj 150 Tstg H M M -55 3 H E N MILLIMETERS 7.20 MAX 5.20 MAX 0.60 MAX 2.60 MAX E F G H J K L M 1.15 MAX 1.27 1.70 MAX 0.55 MAX _ 0.50 14.00 + 0.35 MIN _ 0.75 + 0.10 4 N O 25 1.25 Φ1.50 0.10 MAX _ 0.50 12.50 + P Q L R S D 2 H 1.00 1. EMITTER 2. COLLECTOR 3. BASE N TO-92L B D A A W P DEPTH:0.2 C Q 150 S R J Storage Temperature Range H G Collector Current F 1 ) CHARACTERISTIC F O MAXIMUM RATING (Ta=25 S G High Transition Frequency : fT=150MHz(Typ.). DIM A B C D F F H H M E 1 O N 2 H MILLIMETERS 7.20 MAX 5.20 MAX 0.60 MAX 2.60 MAX E F G H J L M 1.15 MAX 2.5 1.70 MAX 0.55 MAX _ 0.50 14.00 + _ 0.10 0.75 + 4 N O 25 1.25 Φ1.50 0.10 MAX _ 0.50 12.50 + P Q R S M 3 DIM A B C D H L D 1.00 1. EMITTER 2. COLLECTOR 3. BASE N TO-92L AT TAPING TYPE ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=-50V, IE=0 - - -1 A Collector Cut-off Current ICEO VCE=-50V, ID=0 - - -1 A Emitter Cut-off Current IEBO VEB=-4V, IC=0 - - -1 A DC Current Gain hFE(1) VCE=-2V, IC=-50mA 60 - 320 hFE(2) VCE=-2V, IC=-1A 30 - - IC=-1mA, IB=0 -50 - - V Collector-Emitter Breakdown Voltage V(BR)CEO Collector-Emitter Saturation Voltage VCE(sat) IC=-500mA, IB=-50mA - -0.2 -0.7 V Base-Emitter Saturation Voltage VBE(sat) IC=-500mA, IB=-50mA - -0.85 -1.2 V fT VCE=-10V, IC=-50mA - 150 - MHz VCB=-10V, IE=0, f=1MHz - 20 - pF Transition Frequency Collector Output Capacitance Note : hFE(1) Classification O:60 120, Y:100 2021. 02. 05 Revision No : 5 Cob 200, GR:160 320 1/3 KTB764 IC - VCE IB =-8mA IB =-6mA -600 IB =-4mA IB =-3mA -400 IB =-2mA IB =-1mA -200 I B =0mA 0 -2 -4 -6 -10 -800 I B =-6mA IB =-4mA -400 IB =-2mA -200 0 IB =0mA 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 hFE - IC Cob - VCB COMMON EMITTER Ta=25 C 300 VCE =-2V 100 50 30 -1 -3 -10 -30 -100 -300 -1K -5K 100 COMMON EMITTER f=1MHz Ta=25 C 50 30 10 5 3 -1 -3 fT - IC COMMON EMITTER Ta=25 C VCE =-10V 100 50 30 -1 -3 -10 -30 -100 COLLECTOR CURRENT IC (mA) Revision No : 5 -10 -30 -50 -100 VCE(sat) - IC -300 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 300 -5 COLLECTOR-BASE VOLTAGE VCB (V) COLLECTOR CURRENT IC (mA) TRANSITION FREQUENCY fT (MHz) I B =-10mA -600 -12 10 2021. 02. 05 I B =-20mA COLLECTOR-EMITTER VOLTAGE VCE (V) 500 10 IB mA 30 =- COLLECTOR-EMITTER VOLTAGE VCE (V) 1K DC CURRENT GAIN hFE -8 -1000 IB = -50 mA IB =-10mA -800 0 COLLECTOR CURRENT IC (mA) -1000 COLLECTOR OUTPUT CAPACITANCE Cob (pF) COLLECTOR CURRENT IC (mA) IC - VCE -1.0 -0.5 COMMON EMITTER Ta=25 C -0.3 -0.1 -0.05 /I B IC -0.03 -0.01 0 =1 -1 -3 -10 -30 -100 -300 -1K -5K COLLECTOR CURRENT IC (mA) 2/3 KTB764 Pc - Ta 1s ec OP -0.1 AT IO N c se ER 0m 10 DC c -0.5 -0.3 e ms I C MAX. 10 -1 1PULSE I CP -0.05 -0.03 -0.01 -0.005 -0.5 -1 -3 -5 -10 -30 -50 -100 COLLECTOR-EMITTER VOLTAGE VCE (V) 2021. 02. 05 Revision No : 5 COLLECTOR POWER DISSIPATION Pc (mW) -5 -3 c se 1m COLLECTOR CURRENT IC (A) SAFE OPERATING AREA 1.2k 1k 800 600 400 200 0 0 20 40 60 80 100 120 140 160 AMBIENT TEMPERATURE Ta ( C) 3/3